Parameter Typ. Max. Units
RθJA Maximum Junction-to-Ambient75 100 °C/W
IRLML2502GPbF
HEXFET® Power MOSFET
These N-Channel MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined
with the fast switching speed and ruggedized device design
that HEXFET® power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable device
for use in battery and load management.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce
a HEXFET Power MOSFET with the industry's smallest
footprint. This package, dubbed the Micro3™, is ideal for
applications where printed circuit board space is at a
premium. The low profile (<1.1mm) of the Micro3 allows it
to fit easily into extremely thin application environments
such as portable electronics and PCMCIA cards. The thermal
resistance and power dissipation are the best available.
Thermal Resistance
VDSS = 20V
RDS(on) = 0.045Ω
lUltra Low On-Resistance
lN-Channel MOSFET
l SOT-23 Footprint
lLow Profile (<1.1mm)
lAvailable in Tape and Reel
lFast Switching
lLead-Free
lHalogen-Free
Description
09/25/12
www.irf.com 1
Parameter Max. Units
VDS Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 4.2
ID @ TA= 70°C Continuous Drain Current, VGS @ 4.5V 3.4 A
IDM Pulsed Drain Current 33
PD @TA = 25°C Power Dissipation 1.25
PD @TA = 70°C Power Dissipation 0.8
Linear Derating Factor 0.01 W/°C
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Absolute Maximum Ratings
W
Micro3™
D
S
G
3
1
2
PD - 96163A
IRLML2502GPbF
2www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width ≤ 300μs; duty cycle ≤ 2%.
Surface mounted on FR-4 board, t ≤ 5sec.
S
D
G
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Voltage 20 ––– ––– V
ΔV
(BR)DSS
/ΔT
J
Breakdown Voltage Temp. Coefficient ––– 0.01 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 0.035 0.045 Ω
––– 0.050 0.080
V
GS(th)
Gate Threshold Voltage 0.60 ––– 1.2 V
ΔV
GS(th)
Gate Threshold Voltage Coefficient ––– -3.2 ––– mV/°C
gfs Forward Transconductance 5.8 ––– ––– S
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 25
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
Q
g
Total Gate Charge ––– 8.0 12
Q
gs
Gate-to-Source Charge ––– 1.8 2.7
Q
Gate-to-Drain ("Miller") Charge ––– 1.7 2.6
t
d(on)
Turn-On Delay Time ––– 7.5 –––
t
r
Rise Time ––– 10 –––
t
d(off)
Turn-Off Delay Time ––– 54 –––
t
f
Fall Time ––– 26 –––
C
Input Capacitance ––– 740 –––
C
oss
Output Capacitance ––– 90 –––
C
rss
Reverse Transfer Capacitance ––– 66 –––
Source-Drain Rating and Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current
(Body Diode)
I
SM
Pulsed Source Current
(Body Diode)
c
V
SD
Diode Forward Voltage ––– ––– 1.2 V
t
rr
Reverse Recovery Time ––– 16 24 ns
Q
rr
Reverse Recovery Charge ––– 8.6 13 nC
MOSFET symbol
nA
ns
A
pF
nC V
DS
= 10V
V
GS
= 12V
V
GS
= -12V
Conditions
V
GS
= 0V, I
D
= 250uA
Reference to 25°C, I
D
= 1.0mA
V
GS
= 4.5V, I
D
= 4.2A
d
––– ––– 33
––– ––– 1.3
Conditions
R
D
= 10Ω
d
ƒ = 1.0MHz
T
J
= 25°C, I
F
= 1.3A
di/dt = 100A/μs
d
T
J
= 25°C, I
S
= 1.3A, V
GS
= 0V
d
showing the
integral reverse
p-n junction diode.
R
G
= 6Ω
V
DS
= 10V, I
D
= 4.0A
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
μA
V
GS
= 5.0V
d
I
D
= 1.0A
V
GS
= 0V
V
DS
= 15V
I
D
= 4.0A
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 2.5V, I
D
= 3.6A
d
V
DS
= 16V, V
GS
= 0V
V
DD
= 10V
IRLML2502GPbF
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Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
T , Junction Temperature ( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
4.5V
4.0A
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 25 C
J°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
1
10
100
0.1 1 10 100
20μs PULSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
2.25V
10
100
2.0 2.4 2.8 3.2 3.6 4.0
V = 15V
20μs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
IRLML2502GPbF
4www.irf.com
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
0 4 8 12 16
0
2
4
6
8
10
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.0A
V = 10V
DS
0.1
1
10
100
0.4 0.6 0.8 1.0 1.2 1.4
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
0.1
1
10
100
1000
0.1 1 10 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
Single Pulse
T
T
= 150 C
= 25 C
°
°
J
A
V , Drain-to-Source Voltage (V)
I , Drain Current (A)I , Drain Current (A)
DS
D
10us
100us
1ms
10ms
1 10 100
0
200
400
600
800
1000
1200
V , Drain-to-Source Voltage (V)
C, Capacitance (pF)
DS
V
C
C
C
=
=
=
=
0V,
C
C
C
f = 1MHz
+ C
+ C
C SHORTED
GS
iss gs gd , ds
rss gd
oss ds gd
Crss
Coss
Ciss
IRLML2502GPbF
www.irf.com 5
Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Fig 9. Maximum Drain Current Vs.
Case Temperature
25 50 75 100 125 150
0.0
1.0
2.0
3.0
4.0
T , Case Temperature ( C)
I , Drain Current (A)
°
C
D
0.1
1
10
100
1000
0.00001 0.0001 0.001 0.01 0.1 1 10
Notes:
1. Duty factor D = t / t
2. Peak T = P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pulse Duration (sec)
Thermal Response (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
IRLML2502GPbF
6www.irf.com
Fig 12. On-Resistance Vs. Drain Current
Fig 11. On-Resistance Vs. Gate Voltage
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
VGS, Gate -to -Source Voltage ( V )
0.02
0.03
0.04
0.05
RDS(on) , Drain-to -Source Voltage ( Ω )
Id = 4.0A
0 10203040
iD , Drain Current ( A )
0.00
0.10
0.20
0.30
RDS ( on ) , Drain-to-Source On Resistance ( Ω )
VGS = 4.5V
VGS = 2.5V
-75 -50 -25 025 50 75 100 125 150
TJ , Temperature ( °C )
0.5
0.7
0.9
1.1
1.3
VGS(th), Gate threshold Voltage (V)
ID = 50μA
ID = 250μA
Fig 13. Threshold Voltage Vs. Temperature
IRLML2502GPbF
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Micro3 (SOT-23/TO-236AB) Part Marking Information
Micro3 (SOT-23) Package Outline
Dimensions are shown in millimeters (inches)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
e
E1
E
D
A
B
0.15 [0.006]
e1
12
3
MCBA
5
6
6
5
NOTES:
b
A1 3X
A
A2
ABC
M0.20 [0.008]
0.10 [0.004] C
C
1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1994
2. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: MILLIMETER.
4. DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE.
5. DATUM A AND B TO BE DETERMINED AT DATUM PLANE H.
6. DIMENSIONS D AND E1 ARE MEASURED AT DATUM PLANE H. DIMENSIONS DOES
NOT INCLUDE MOLD PROTRUSIONS OR INTERLEAD FLASH. MOLD PROTRUSIONS
OR INTERLEAD FLASH SHALL NOT EXCEED 0.25 MM [0.010 INCH] PER SIDE.
7. DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE.
8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236 AB.
0.89 1.12
SYMBOL MAXMIN
A1
b
0.01 0.10
c
0.30 0.50
D
0.08 0.20
E
2.80 3.04
E1
2.10 2.64
e
1.20 1.40
A
0.95 BSC
L0.40 0.60
08
MILLIMETERS
A2 0.88 1.02
e1 1.90 BSC
REF0.54L1
BSC0.25
L2

BSC

REF
%6&

INCHES
80

%6&






0.0004
MIN MAX

DIMENSIONS
0.972
1.900
Recommended Footprint
0.802
0.950 2.742
3X L
c
L2
H 4 L1
7
F = IRLML6401
A2001 A27
Notes: This part marking information applies to devices produced after 02/26/2001
LOT CODE
LEAD FREE
DAT E CODE
E = IRLML 6402
X = PART NUMBER CODE REFERENCE:
D = IRL ML5103
C = IRLML6302
B = IRLML2803
A = IRL ML 2402
W = (1-26) IF PRE CEDED BY LAS T DIGIT OF CALENDAR YEAR
W = (27-52) IF PRE CEDED BY A LET TE R
Y
82008
32003
12001
YE AR
2002 2
52005
2004 4
2007
2006
7
6
2010 0
2009 9
YE AR Y
C03
WOR K
WEEK
01
02
A
W
B
04 D
24
26
25
X
Z
Y
WOR K
WEEK W
H = IRL ML 5203
G = IRL ML 2502
K
H
G
F
E
D
C
B
2006
2003
2002
2005
2004
2008
2007
2
0
1
0
2009 J
29
28
30
C
B
D
50
X
I = IRLML0030
J = IRLML2030
L = IRL ML 0060
M = IRL ML0040
K = IRLML0100
N = IRL ML2060
P = IRLML9301
R = IRLML9303
Cu WIR E
HALOGEN FREE
PART NUMBER
IRLML2502GPbF
8www.irf.com
Data and specifications subject to change without notice.
Micro3™ Tape & Reel Information
Dimensions are shown in millimeters (inches)
2.05 ( .080 )
1.95 ( .077 )
TR
FEED DIRECTION
4.1 ( .161 )
3.9 ( .154 )
1.6 ( .062 )
1.5 ( .060 ) 1.85 ( .072 )
1.65 ( .065 )
3.55 ( .139 )
3.45 ( .136 )
1.1 ( .043 )
0.9 ( .036 )
4.1 ( .161 )
3.9 ( .154 ) 0.35 ( .013 )
0.25 ( .010 )
8.3 ( .326 )
7.9 ( .312 )
1.32 ( .051 )
1.12 ( .045 )
9.90 ( .390 )
8.40 ( .331 )
178.00
( 7.008 )
MAX.
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package
IR WORLD HEADQUARTERS: 101N.Sepulveda blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 09/2012