Hardware Documentation Data Sheet (R) HAL 1820 Programmable Linear Hall Effect Sensor Edition April 28, 2011 DSH000158_001EN HAL 1820 DATA SHEET Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable. The software and proprietary information contained therein may be protected by copyright, patent, trademark and/or other intellectual property rights of Micronas. All rights not expressly granted remain reserved by Micronas. Micronas assumes no liability for errors and gives no warranty representation or guarantee regarding the suitability of its products for any particular purpose due to these specifications. By this publication, Micronas does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Commercial conditions, product availability and delivery are exclusively subject to the respective order confirmation. Micronas Trademarks - HAL Micronas Patents Choppered Offset Compensation protected by Micronas patents no. US5260614A, US5406202A, EP0525235B1 and EP0548391B1. Sensor programming with VDD-Modulation protected by Micronas Patent No. EP 0 953 848. Third-Party Trademarks All other brand and product names or company names may be trademarks of their respective companies. Any information and data which may be provided in the document can and do vary in different applications, and actual performance may vary over time. All operating parameters must be validated for each customer application by customers' technical experts. Any new issue of this document invalidates previous issues. Micronas reserves the right to review this document and to make changes to the document's content at any time without obligation to notify any person or entity of such revision or changes. For further advice please contact us directly. Do not use our products in life-supporting systems, aviation and aerospace applications! Unless explicitly agreed to otherwise in writing between the parties, Micronas' products are not designed, intended or authorized for use as components in systems intended for surgical implants into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the product could create a situation where personal injury or death could occur. No part of this publication may be reproduced, photocopied, stored on a retrieval system or transmitted without the express written consent of Micronas. 2 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET Contents Page Section Title 4 4 4 5 5 5 5 5 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 1.7. Introduction Major Applications Features Marking Code Operating Junction Temperature Range (TJ) Hall Sensor Package Codes Solderability and Welding Pin Connections and Short Descriptions 6 6 8 8 8 9 10 10 10 2. 2.1. 2.2. 2.2.1. 2.2.2. 2.2.3. 2.2.4. 2.3. 2.3.1. Functional Description General Function Digital Signal Processing and EEPROM Customer Register I Customer Register II Customer register III and IV Signal Path Calibration Procedure General Procedure 11 11 16 16 16 17 17 18 19 21 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. 3.7. 3.7.1. Specifications Outline Dimensions Dimensions of Sensitive Area Package Dimensions Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics Magnetic Characteristics Definition of Sensitivity Error ES 22 22 22 22 23 4. 4.1. 4.2. 4.3. 4.4. Application Notes Ambient Temperature EMC and ESD Application Circuit Temperature Compensation 24 24 25 25 5. 5.1. 5.2. 5.3. Programming of the Sensor Programming Interface Programming Environment and Tools Programming Information 26 6. Data Sheet History Micronas April 28, 2011; DSH000158_001EN 3 HAL 1820 DATA SHEET The sensor is designed for industrial and automotive applications and operates in the junction temperature range from -40 C up to 170 C. The HAL1820 is available in the very small leaded packages TO92UA-1 and TO92UA-2 and in the SMD-package SOT89B-1. Programmable Linear Hall Effect Sensor 1. Introduction The HAL1820 is a new member of the Micronas family of programmable linear Hall-Effect Sensors. 1.1. Major Applications The HAL1820 is a universal magnetic field sensor with a ratiometric, linear analog output. It is produced in CMOS technology and can be used for magnetic field measurements, current measurements, and detection of mechanical movement. Very accurate angle measurements or distance measurements can also be made. The sensor is very robust and can be used in electrically and mechanically harsh environments. Major characteristics like magnetic field range, sensitivity, offset (output voltage at zero magnetic field) and the temperature coefficients are programmable in a non-volatile memory. The HAL1820 features a customer data register that enables the customer to store production information (like production serial number) inside each sensor. The sensor includes a temperature-compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, an EEPROM memory with redundancy and lock function for the calibration data, a serial interface for programming the EEPROM, a ratiometric linear output and protection devices. Internal digital signal processing compensates for analog offsets, temperature changes, and mechanical stress, resulting in highly stable performance. The HAL1820 is programmable by modulation of the supply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output signal directly to the input signal (like mechanical angle, distance, or current). Individual adjustment of each sensor during the customer's manufacturing process is possible. With this calibration procedure, the tolerances of the sensor, the magnet and the mechanical positioning can be compensated in the final assembly. Due to the sensor's robust characteristics, the HAL1820 is the optimal system solution for applications such as: - linear position measurements, - angle sensors, - distance measurements, - magnetic field and current measurement. 1.2. Features - Ratiometric linear output proportional to the magnetic field - Various programmable magnetic characteristics with non-volatile memory - Digital signal processing - Continuos measurement ranges from 20 mT to 160 mT - Customer readable Micronas production information (like lot number, wafer number, etc.) - Temperature characteristics programmable for matching all common magnetic materials - Programming via supply voltage modulation - Lock function and built-in redundancy for EEPROM memory - Temperature and stress-stable quiescent output voltage - on-chip temperature compensation - active offset compensation In addition, the temperature compensation of the Hall IC can be fit to all common magnetic materials by programming first and second order temperature coefficients of the Hall sensor sensitivity. This enables operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. - operates from 40 C up to 170 C junction temperature - operates from 4.5 V up to 5.5 V supply voltage in specification - operates with static magnetic fields and dynamic magnetic fields up to 2.25 kHz - overvoltage and reverse-voltage protection at VDD pin - magnetic characteristics extremely robust against mechanical stress - short-circuit protected push-pull output - EMC and ESD optimized design 4 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET 1.3. Marking Code 1.6. Solderability and Welding The HAL1820 has a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. Soldering Type HAL 1820 Temperature Range A K 1820A 1820K 1.4. Operating Junction Temperature Range (TJ) The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = 40 C to +170 C K: TJ = 40 C to +140 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 4.1. on page 22. During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Welding Device terminals should be compatible with laser and resistance welding. Please note that the success of the welding process is subject to different welding parameters which will vary according to the welding technique used. A very close control of the welding parameters is absolutely necessary in order to reach satisfying results. Micronas, therefore, does not give any implied or express warranty as to the ability to weld the component. 1.7. Pin Connections and Short Descriptions Pin No. Pin Name Type Short Description 1 VSUP IN Supply Voltage and Programming Pin Temperature Range: A or K 2 GND Package: SF for SOT89B-1 UA for TO92UA-1/2 3 OUT 1.5. Hall Sensor Package Codes HALXXXPA-T Ground OUT Push-Pull Output in Application mode Type: 1820 1 Example: HAL1820UA-K VDD Type: 1820 Package: TO92UA-1/2 Temperature Range: TJ = 40 C to +140 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". Micronas OUT 3 2,4 GND Fig. 1-1: Pin configuration April 28, 2011; DSH000158_001EN 5 HAL 1820 DATA SHEET 2. Functional Description 2.1. General Function The HAL1820 is a monolithic integrated circuit which provides an output voltage proportional to the magnetic flux through the Hall plate and proportional to the supply voltage (ratiometric behavior). As long as the LOCK register is not set, the output characteristic can be adjusted by programming the EEPROM registers. The IC can be programmed via VSUP line. After detecting a command, the sensor reads or writes the memory and answers with a digital signal on the output pin. Output/Magnetic Field Polarity The external magnetic field component perpendicular to the branded side of the package generates a Hall voltage. The Hall IC is sensitive to magnetic north and south polarity. This voltage is converted to a digital value, processed in the Digital Signal Processing Unit (DSP) according to the settings of the EEPROM registers, converted back to an analog voltage by a D/A converter and buffered by a push-pull output transistor stage. The function and the parameter for the DSP are explained in Section 2.2. on page 8. Internal temperature compensation circuitry and the choppered offset compensation enables operation over the full temperature range with minimal degradation in accuracy and offset. The circuitry also rejects offset shifts due to mechanical stress from the package. In addition, the sensor IC is equipped with devices for overvoltage and reverse-voltage protection at supply pin. A LOCK register disables the programming of the EEPROM memory. The register can not be reset by the customer. Applying a south-pole magnetic field perpendicular to the branded side of the package will increase the output voltage (for Sensitivity < 0) from the quiescent (offset) voltage towards the supply voltage. A negative magnetic field will decrease the output voltage. The output logic will be inverted for sensitivity >0. In addition HAL1820 features an internal error detection. The following error modes can be detected: - Over-/underflow in adder or multiplier - Over-/underflow in A/D converter - Overtemperature detection In case of an error the sensors output will be forced to the lower error band. The error band is defined by VDIAG (see Section 3.6. on page 14). VSUP Internally stabilized Supply and Protection Devices Switched Hall Plate Programming Interface Temperature Dependent Bias Oscillator A/D Converter Digital Signal Processing Undervoltage Detection 50 D/A Converter Analog Output Protection Devices OUT EEPROM Memory Lock Control GND Fig. 2-1: HAL1820 block diagram 6 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET Digital Output Register 10 bit Digital Signal Processing Adder A/D Converter TC TCSQ 5 bit 5 bit MRange 3 bit Offset 8 bit OALN 1 bit Multiplier Output Sensitivity Lock Micronas 8 bit 1 bit Register Programming Parameter Lock Control Fig. 2-2: Details of Programming Parameter and Digital Signal Processing Table 2-1: Cross reference table EEPROM register and sensor parameter EEPROM-Register Parameter Data Bits Function customer register I Sensitivity 8 Magnetic sensitivity Offset 8 Magnetic offset LOCKR 1 Customer Lock OALN 1 Magnetic Offset Alignment Bit (MSB or LSB aligned) TCSQ 5 Quadratic temperature coefficient TC 5 Linear temperature coefficient MRANGE 3 Available magnetic ranges customer register III Micronas Data 16 Micronas production information (read only) customer register IV Micronas Data 16 Micronas production information (read only) customer register II Micronas April 28, 2011; DSH000158_001EN 7 HAL 1820 DATA SHEET 2.2. Digital Signal Processing and EEPROM The DSP is the major part of this sensor and performs the signal conditioning. The parameters for the DSP are stored in the EEPROM registers. The details are shown in Fig. 2-2. The measurement data can be readout from the DIGITAL OUTPUT register. The customer can decide if the Offset is MSB aligned or LSB aligned. The MSB or LSB alignment is enabled by an additional Offset alignment bit (OALN). In case the OALN bit is 1 the Offset is programmable from 50% up to 50% of VDD. This means that the Offset covers the full-scale range. If the OALN bit is set to zero, then the Offset covers only 1/4 of the full-scale (12.5% up to 12.5% of VDD). The customer can adjust the Offset symmetrically around 50% of VDD (37.5%... 62.5% of VDD). The OFFSET register can be set with 8-bit resolution. DIGITAL OUTPUT This 16-bit register delivers the actual digital value of the applied magnetic field after the signal processing. This register can only be read out, and it is the basis for the calibration procedure of the sensor in the system environment. Only 10 bits of the register contain valid data. The DIGITAL OUTPUT range is from 512 to 511. 2.2.2. Customer Register II For Sensitivity = 1 the DIGITAL OUTPUT value will increase for negative magnetic fields (north pole) on the branded side of the package (positive DIGITAL OUTPUT values). MRANGE Note: During application design, it should be taken into consideration that DIGITAL OUTPUT should not saturate in the operational range of the specific application. The area in the EEPROM accessible for the customer consists of four so called customer registers with a size of 16 bit each. 2.2.1. Customer Register I Customer register I contains the bits for magnetic sensitivity (SENSITIVITY) and magnetic offset (OFFSET). SENSITIVITY Customer register II contains the bits for magnetic range (MRANGE), linear and quadratic temperature coefficients (TC and TCSQ), magnetic offset alignment (OALN) and the customer lock bit. The MRANGE bits define the magnetic field range of the A/D converter. The following eight magnetic ranges are available. Table 2-2: MRANGE bit definition Magnetic Field Range BIT SETTING 20 mT...20 mT 0 40 mT...40 mT 1 60 mT...60 mT 2 80 mT...80 mT 3 100 mT...100 mT 4 120 mT...120 mT 5 140 mT...140 mT 6 160 mT...160 mT 7 The SENSITIVITY bits define the parameter for the multiplier in the DSP. The Sensitivity is programmable between 2 and 2. The SENSITIVITY bits can be changed in steps of 0.0156. Sensitivity = 1 (@ Offset = 0) corresponds to full-scale of the output signal if the A/D-converter value has reached the full-scale value. OFFSET The OFFSET bits define the parameter for the adder in the DSP. Offset defines the output signal without external magnetic field (B = 0 mT). 8 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET TC and TCSQ The temperature dependence of the magnetic sensitivity can be adapted to different magnetic materials in order to compensate for the change of the magnetic strength with temperature. The adaption is done by programming the TC (Linear Temperature Coefficient) and the TCSQ registers (Quadratic Temperature Coefficient). Thereby, the slope and the curvature of the temperature dependence of the magnetic sensitivity can be matched to the magnet and the sensor assembly. As a result, the output signal characteristic can be fixed over the full temperature range. The sensor can compensate for linear temperature coefficients ranging from about 3100 ppm/K up to 2550 ppm/K and quadratic coefficients from about 7 ppm/K2 to 15 ppm/K2 (typical range). Min. and max. values for quadratic temperature coefficient depend on linear temperature coefficient. Please refer to Section 4.4. on page 23 for the recommended settings for different linear temperature coefficients. Magnetic Offset Alignment Bit (OALN) Please refer to Section 2.2.1. on page 8 (OFFSET). LOCK By setting this 1-bit register, all registers will be locked, and the EEPROM content can not be changed anymore. It is still possible to read all register content by sending a read command to the sensor. The LOCK bit is active after the first power-off and power-on sequence after setting the LOCK bit. Warning: This register cannot be reset! 2.2.3. Customer register III and IV Customer register III and IV contain 16 bits each. These two registers can be read by the customer and Micronas will use this register to store production information like wafer position, wafer number and production lot number. Micronas April 28, 2011; DSH000158_001EN 9 HAL 1820 DATA SHEET ADC +FS { +range 0 FS { range } 8-bit offset value (128...+127) 8-bit sensitivity value (128...+127) 1 x 2 0.5 (OALN = 0) 0.125 (OALN = 1) + ADC value range 7936 FS ~ ~ range 10-bit readout-value (512...+511) * clamp y/n y 1 @ offset = 0 and sensitivity = 1 adder out range 8192/8191 Definition: FS of ADC = 1. Fig. 2-3: Signal path HAL1820 2.2.4. Signal Path Locking the Sensor Fig. 2-3 shows the signal path and signal processing of HAL1820. The measurement output value y is calculated out of the input signal X with the following equation The last step is activating the LOCK function by setting the LOCK bit. Please note that the LOCK function becomes effective after power-down and power-up of the Hall IC. The sensors EEPROM is then locked and its content can not be changed anymore. The sensor still answers to read commands on the supply line. Y = sensitivity X - OFFSET The parameters offset and sensitivity are two's complement encoded 8-bit values (see Section 2.2.1. on page 8). Warning: This register cannot be reset! 2.3. Calibration Procedure 2.3.1. General Procedure For calibration in the system environment, the application kit from Micronas is recommended. It contains the hardware for the generation of the serial telegram for programming and the corresponding software for the input of the register values. For the individual calibration of each sensor in the customer application, a two-point adjustment is recommended. Please use Micronas Software Kit for the calibration. 10 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-1: Plastic Small Outline Transistor package, 4 leads Ordering code: SF Weight approximately 0.034 g Micronas April 28, 2011; DSH000158_001EN 11 HAL 1820 DATA SHEET Fig. 3-2: TO92UA-1: Plastic Transistor Standard UA package, 3 leads, spread Weight approximately 0.106 g 12 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET Fig. 3-3: TO92UA-2: Plastic Transistor Standard UA package, 3 leads, not spread Weight approximately 0.106 g Micronas April 28, 2011; DSH000158_001EN 13 HAL 1820 DATA SHEET Fig. 3-4: TO92UA/UT-1: Dimensions ammopack inline, spread 14 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET Fig. 3-5: TO92UA/UT-2: Dimensions ammopack inline, not spread Micronas April 28, 2011; DSH000158_001EN 15 HAL 1820 DATA SHEET 3.2. Dimensions of Sensitive Area 0.2 mm x 0.1 mm 3.3. Package Dimensions TO92UA-1/-2 SOT89B-1 y 1.0 mm nominal 0.95 mm nominal A4 0.4 mm nominal 0.4 mm nominal D1 3.05 0.05 mm 2.55 0.05 mm H1 min. 21 mm max. 23.1 mm not applicable 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit Condition VSUP Supply Voltage 1 8.5 8.5 V t < 96 h, not additive 14.4 15 14.4 16 V t < 10 min. 1) t < 1 min. 1) not additive t < 96 h t < 10 min. t < 1 min. not additive VOUT Output Voltage1) 3 0.52) 0.52) 0.52) 8.5 14.4 16 V VOUT VSUP Excess of Output Voltage over Supply Voltage 1,3 0.5 V IOUT Continuous Output Current 3 5 5 mA tSh Output Short Circuit Duration 3 10 min TJ Junction Temperature Range 40 1903) C VESD ESD Protection4) 4.0 4.0 kV 1,2,3 not additive 1) 2) 3) as long as TJmax is not exceeded internal protection resistor = 50 for 96h - Please contact Micronas for other temperature requirements AEC-Q100-002 (100 pF and 1.5 k 16 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions/Characteristics" is not implied and may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VSUP Supply Voltage 1 4.5 5 5.5 V IOUT Continuous Output Current 3 1 1 mA RL Load Resistor 3 5.5 10 k CL Load Capacitance 3 0.33 10 47 nF NPRG Number of EEPROM Programming Cycles 100 0 C < Tamb < 55 C TJ Junction Operating Temperature1) 40 40 40 125 150 170 C C C for 8000 h (not additive) for 2000 h (not additive) < 1000 h (not additive) 1) Remarks Depends on the temperature profile of the application. Please contact Micronas for life time calculations. Micronas April 28, 2011; DSH000158_001EN 17 HAL 1820 DATA SHEET 3.6. Characteristics at TJ = 40 C to +170 C (for temperature type A), VSUP = 4.5 V to 5.5 V, GND = 0 V, after programming the sensor and locking the EEPROM, at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VSUP = 5 V. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature grade (Example: For K-Type this table is limited to TJ = 40 C to +140 C Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions ISUP Supply Current over Temperature Range 1 7 10 mA Resolution 3 10 Bit INL Non-Linearity of Output Voltage over Temperature 3 1.0 0 1.0 % ER Ratiometric Error of Output over Temperature (Error in VOUT / VSUP) 3 1.0 0 1.0 % VOUTH Output High Voltage 3 4.7 4.9 V VSUP = 5 V, IOUT = +/ 1 mA2) VOUTL Output Low Voltage 3 0.1 0.3 V VSUP = 5 V, IOUT = +/ 1 mA2) tr(O) Response Time of Output3) 3 0.5 1 ms CL = 10 nF, time from 10% to 90% of final output voltage for a step like signal Bstep from 0 mT to Bmax tPOD Power-Up Time (Time to reach stabilized Output Voltage)3) 1 1.5 ms CL = 10 nF, 90% of VOUT BW Small Signal Bandwidth (3 dB)3) 3 2.25 2.5 kHz BAC < 10 mT VOUTn Output RMS Noise3) 3 2.6 5 mV B = 5% to 95% of Bmax ROUT Output Resistance over Recommended Operating Range3) 3 60 VOUTLmax VOUT VOUTHmin VPORLH Power-On Reset Level from VSUPLow to VSUPHigh 1 3.9 4.35 4.5 V VPORHL Power-On Reset Level from VSUPHighto VSUPLow 1 3.8 4.2 4.4 V VPORHYS Power-On Reset Hysteresis 1 0.1 0.175 0.3 V VDIAG Output Voltage in case of Error Detection 3 0 300 mV 250 K/W 70 K/W % of supply voltage1) TO92UA Package Thermal Resistance Measured with a 1s0p board Rthja junction to air Rthjc junction to case SOT89B Package Thermal Resistance Rthja junction to air 210 K/W Rthjc junction to case 60 K/W 1) 2) 3) 18 Measured with a 1s0p board 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3-6) If more than 50% of the selected magnetic field range are used and VOUT is between 0.3 V and 4.7 V Linear output range Guaranteed by design April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET 1.80 1.05 1.45 2.90 1.05 0.50 1.50 Fig. 3-6: Recommended footprint SOT89B-1, Dimensions in mm. All dimensions are for reference only. The pad size may vary depending on the requirements of the soldering process. 3.7. Magnetic Characteristics at Recommended Operating Conditions if not otherwise specified in the column 'Test Conditions', TJ =40 C to +170 C (for temperature type A), VSUP = 4.5 V to 5.5 V, after programming the sensor and locking the EEPROM. Typical Characteristics for TA = 25 C and VSUP = 5 V. For all other temperature ranges this table is also valid, but only in the junction temperature range defined by the temperature grade (Example: For K-Type this table is limited to TJ = 40 C to +140 C Symbol Parameter Values Pin No. Min. Typ. Max. 80 100 120 Unit Test Conditions % % of nominal RANGE RANGEABS Absolute Magnetic Range of A/D Converter over temperature RANGE Magnetic field range 20 80 160 mT ES Sensitivity Error over Temperature Range 3 6 0 6 % Part to part variation for certain combinations of TC and TCSQ (see Section 3.7.1.) Sens Sensitivity Drift (beside temperature drift)1) 2 % TJ = 25 C; after temperature cycling and over life time BOFFSET Magnetic offset 3 2 0 2 mT B = 0 mT, TA = 25 C BOFFSET Magnetic offset drift over Temperature Range 3 300 0 300 T B = 0 mT, RANGE = 20 mT, Sens = 100 mV/mT 3 20 0 20 T Range = 40 mT Nominal RANGE programmable from 20 mT up to 160 mT BOFFSET(T) BOFFSET (25 C) BHysteresis 1) Magnetic Hysteresis1) Guaranteed by design Micronas April 28, 2011; DSH000158_001EN 19 HAL 1820 DATA SHEET ideal 200 ppm/k 1.03 relative sensitivity related to 25 C value least-square-fit straight-line of normalized measured data measurement example of real sensor, normalized to achieve a value of 1 of its least-square-fit straight-line at 25 C 1.02 1.01 1.001 1.00 0.993 0.99 0.98 -50 -25 -10 0 25 50 75 100 temperature [C] 125 150 175 Fig. 3-7: Definition of Sensitivity Error ES. 20 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET 3.7.1. Definition of Sensitivity Error ES ES is the maximum of the absolute value of 1 minus the quotient of the normalized measured value1) over the normalized ideal linear2) value: ES = max abs meas ------------ - 1 ideal Tmin, Tmax In the example shown in Fig. 3-7 the maximum error occurs at 10 C: ES = 1.001 ------------- - 1 = 0.8% 0.993 1) normalized to achieve a least-square-fit straight-line that has a value of 1 at 25 C 2) normalized to achieve a value of 1 at 25 C Micronas April 28, 2011; DSH000158_001EN 21 HAL 1820 DATA SHEET 4. Application Notes 4.3. Application Circuit 4.1. Ambient Temperature For EMC protection, it is recommended to connect one ceramic 47 nF capacitor between ground and output voltage pin as well as 100 nF between supply and ground. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). VSUP TJ = TA + T At static conditions and continuous operation, the following equation applies: OUT HAL1820 T = ISUP * VSUP * RthjX 100 nF The X represents junction to air or to case. 47 nF For worst case calculation, use the max. parameters for ISUP and RthjX, and the max. value for VSUP from the application. GND Fig. 4-1: Recommended application circuit The following example shows the result for junction to air conditions. VSUP = 5.5 V, Rthja = 250 K/W and ISUP = 10 mA the temperature difference T = 13.75 K. The junction temperature TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax T 4.2. EMC and ESD The HAL1820 is designed for a stabilized 5 V supply. Interferences and disturbances conducted along the 12 V onboard system (product standard ISO 7637 part 1) are not relevant for these applications. For applications with disturbances by capacitive or inductive coupling on the supply line or radiated disturbances, the application circuit shown in Fig. 4-1 is recommended. Applications with this arrangement should pass the EMC tests according to the product standards ISO 7637 part 3 (Electrical transient transmission by capacitive or inductive coupling) and part 4 (Radiated disturbances). 22 April 28, 2011; DSH000158_001EN Micronas HAL 1820 DATA SHEET 4.4. Temperature Compensation The relationship between the temperature coefficient of the magnet and the corresponding TC and TCSQ codes for linear compensation is given in the following table. In addition to the linear change of the magnetic field with temperature, the curvature can be adjusted as well. For this purpose, other TC and TCSQ combinations are required which are not shown in the table. Please contact Micronas for more detailed information on this higher order temperature compensation. Temperature Coefficient of Magnet (ppm/K) TC TCSQ 2100 8 0 1800 10 3 1500 12 4 1200 14 5 900 16 6 500 18 6 150 20 6 0 21 5 300 22 5 500 23 4 750 24 4 1000 25 2 1500 27 0 2100 29 5 2700 31 5 Note: Micronas recommends to use the HAL1820 Programming Environment to find optimal settings for temperature coefficients. Please contact Micronas for more detailed information. Micronas April 28, 2011; DSH000158_001EN 23 HAL 1820 DATA SHEET 5. Programming of the Sensor HAL1820 features two different customer modes. In Application Mode the sensor provides a ratiometric analog output voltage. In Programming Mode it is possible to change the register settings of the sensor. The serial telegram is used to transmit the EEPROM content, error codes and digital values of the magnetic field from and to the sensor. tr tf VDDH After power-up the sensor is always operating in the Programming Mode (default after delivery from Micronas and as long as the sensor is not locked). It is switched to the Application Mode by setting a certain volatile bit in the memory of the sensor or by locking the sensor. tp0 logical 0 VDDL tp1 VDDH tp0 logical 1 5.1. Programming Interface In Programming Mode the sensor is addressed by modulating a serial telegram on the sensors supply voltage. The sensor answers with a modulation of the output voltage. A logical "0" is coded as no level change within the bit time. A logical "1" is coded as a level change of typically 50% of the bit time. After each bit, a level change occurs (see Fig. 5-1). tp0 or VDDL or tp0 tp1 Fig. 5-1: Definition of logical 0 and 1 bit A description of the communication protocol and the programming of the sensor is available in a separate document (Application Note Programming HAL1820). Table 5-1: Telegram parameters (All voltages are referenced to GND.) Symbol Parameter Pin No. Limit Values Unit Min. Typ. Max. VSUPL Supply Voltage for Low Level during Programming through Sensor VSUP Pin 1 5.8 6.3 6.6 V VSUPH Supply Voltage for High Level during Programming through Sensor VSUP Pin 1 6.8 7.3 7.8 V VSUPProgram VSUP Voltage for EEPROM programming (after PROG and ERASE) 1 5.7 5.85 6.0 V tp0 Bit time if command send to the sensor 1 1024 s tpOUT Bit time for sensor answer 3 1024 s 24 April 28, 2011; DSH000158_001EN Test Conditions Micronas HAL 1820 DATA SHEET 5.2. Programming Environment and Tools For the programming of HAL1820 during product development and also for production purposes a programming tool including hardware and software is available on request. It is recommended to use the Micronas tool kit in order to easy the product development. The details of programming sequences are also available on request. 5.3. Programming Information For production and qualification tests, it is mandatory to set the LOCK bit after final adjustment and programming of HAL1820. The LOCK function is active after the next power-up of the sensor. The success of the LOCK process should be checked by reading the status of the LOCK bit after locking and/ or by an analog check of the sensors output signal. HAL1820 features a diagnostic register to check the success and quality of the programming process. It is mandatory to check that all bits of the DIAGN register are 0 after the programming of the sensor. More details can be found in the application note "HAL1820 Programming Guide". Electrostatic Discharges (ESD) may disturb the programming pulses. Please take precautions against ESD. Micronas April 28, 2011; DSH000158_001EN 25 HAL 1820 DATA SHEET 6. Data Sheet History 1. Advance Information: "HAL 1820, Programmable Linear Hall Effect Sensor", June 30, 2009, AI000149_001EN. First release of the advance information. 2. Advance Information: "HAL 1820, Programmable Linear Hall Effect Sensor", April 28, 2010, AI000149_002. Second release of the advance information. Major Changes: - Reset levels added - TC/TCSQ table added - Update of magnetic parameters 3. Data Sheet: "HAL 1820 Programmable Linear Hall Effect Sensor", April 28, 2011, DSH000158_001EN. First release of the data sheet. Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg P.O. Box 840 D-79008 Freiburg, Germany Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com 26 April 28, 2011; DSH000158_001EN Micronas