This is information on a product in full production.
February 2014 DocID024993 Rev 2 1/23
23
STD2N80K5, STF2N80K5,
STP2N80K5, STU2N80K5
N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH™ 5
Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
•TO-220 worldwide best R
DS(on)
•Worldwide best FOM (figure of merit)
•Ultra low gate charge
•100% avalanche tested
•Zener-protected
Applications
•Switching applications
Description
These devices are N-channel Power MOSFETs
developed using SuperMESH™ 5 technology.
This revolutionary, avalanche-rugged, high
voltage Power MOSFET technology is based on
an innovative proprietary vertical structure. The
result is a drastic reduction in on-resistance and
ultra low gate charge for applications which
require superior power density and high
efficiency.
D(2, TAB)
G(1)
S(3)
AM01476v1
TO-220
123
TAB
1
3
DPAK
TAB
TO-220FP
12
3
3
2
1
TA B
IPAK
Order codes V
DS
R
DS(on)
max I
D
P
TOT
STD2N80K5
800 V 4.5 Ω2 A
45 W
STF2N80K5 20 W
STP2N80K5 45 W
STU2N80K5
Table 1. Device summary
Order codes Marking Package Packaging
STD2N80K5
2N80K5
DPAK Tape and reel
STF2N80K5 TO-220FP
TubeSTP2N80K5 TO-220
STU2N80K5 IPAK
www.st.com
Contents STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
2/23 DocID024993 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
DocID024993 Rev 2 3/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
DPAK,
TO-220,
IPAK TO-220FP
V
GS
Gate- source voltage 30 V
I
D
Drain current (continuous) at T
C
= 25 °C 2
(1)
1. For TO-220FP limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C 1.3 A
I
DM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 8 A
P
TOT
Total dissipation at T
C
= 25 °C 45 20 W
I
AR
Max current during repetitive or single pulse
avalanche (pulse width limited by T
jmax
)0.5 A
E
AS
Single pulse avalanche energy
(starting T
J
= 25 °C, I
D
=I
AS
, V
DD
= 50 V) 60.5 mJ
dv/dt
(3)
3. I
SD
≤ 2 A, di/dt ≤ 100 A/μs, peak V
DS
≤ V
(BR)DSS
Peak diode recovery voltage slope 4.5 V/ns
dv/dt (4)
4. V
DS
≤ 640 V
MOSFET dv/dt ruggedness 50 V/ns
T
j
Operating junction temperature -55 to 150 °C
T
stg
Storage temperature °C
Table 3. Thermal dat a
Symbol Parameter Value Unit
DPAK TO-220FP TO-220 IPAK
R
thj-case
Thermal resistance junction-case 2.78 6.25 2.78 2.78
°C/WR
thj-pcb
Thermal resistance junction-pcb 50
(1)
1. When mounted on FR-4 board of 1 inch², 2 oz Cu.
R
thj-amb
Thermal resistance junction-amb 62.5 100
Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
4/23 DocID024993 Rev 2
2 Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified).
Table 4. On/off states
Symbol Parameter Test condition s Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0) I
D
= 1 mA 800 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 800 V 1 μA
V
DS
= 800 V T
j
=125 °C 50 μA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ± 20 V ±10 μA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 100 μA345V
R
DS(on)
Static drain-source on-
resistance V
GS
= 10 V, I
D
= 1 A 3.5 4.5 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=100 V, f=1 MHz, V
GS
=0
- 105 - pF
C
oss
Output capacitance - 8 - pF
C
rss
Reverse transfer
capacitance -0.5- pF
C
o(tr)(1)
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C
oss
when
V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance time
related VGS = 0, VDS = 0 to 640 V
-16-pF
Co(er)(2)
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent capacitance
energy related -7-pF
RGIntrinsic gate resistance f = 1 MHz, ID=0 - 18 - Ω
QgTotal gate charge
VDD = 640 V, ID = 2 A
VGS =10 V
-9.5- nC
Qgs Gate-source charge - 1.5 - nC
Qgd Gate-drain charge - 7.5 - nC
DocID024993 Rev 2 5/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics
The built-in back-to-back Zener diodes have been specifically designed to enhance not only
the device’s ESD capability, but also to make them capable of safely absorbing any voltage
transients that may occasionally be applied from gate to source. In this respect, the Zener
voltage is appropriate to achieve efficient and cost-effective protection of device integrity.
The integrated Zener diodes thus eliminate the need for external components.
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 400 V, I
D
= 1 A,
R
G
=4.7 Ω, V
GS
=10 V
-8-ns
t
r
Rise time - 12 - ns
t
d(off)
Turn-off delay time - 19 - ns
t
f
Fall time - 32 - ns
Table 7. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 2 A
I
SDM(1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 8 A
V
SD(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage I
SD
= 2 A, V
GS
=0 - 1.5 V
t
rr
Reverse recovery time
I
SD
= 2 A, V
DD
= 60 V
di/dt = 100 A/μs,
- 255 ns
Q
rr
Reverse recovery charge - 1 μC
I
RRM
Reverse recovery current - 8 A
t
rr
Reverse recovery time I
SD
= 2 A,V
DD
= 60 V
di/dt=100 A/μs,
Tj=150 °C
- 285 ns
Q
rr
Reverse recovery charge - 1.45 μC
I
RRM
Reverse recovery current - 7.5 A
Table 8. Gate-source Zener diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)GSO
Gate-source breakdown voltage I
GS
= ± 1mA, I
D
= 0 30 - - V
Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
6/23 DocID024993 Rev 2
2.1 E lectrical characteristics (curves)
Figure 2. Safe operating area for DPAK and
IPAK Figure 3. Thermal impedance for DPAK and
IPAK
I
D
10
1
0.1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10ms
1ms
100µs
0.01
Tj=150°C
Tc=2 5°C
Single pulse
10ms
100
AM18072v1
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedan ce for TO-220FP
I
D
10
1
0.1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
1ms
100µs
0.01
Tj=150°C
Tc=25°C
Single pulse
10ms
100
AM18073v1
Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220
I
D
1
0.1
0.1 1V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
1ms
100µs
0.01
Tj=150°C
Tc=25°C
Single pulse
10ms
100
AM18074v1
DocID024993 Rev 2 7/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. St atic drain-source on-resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
I
D
2.5
1.5
0.5
0.0
02V
DS
(V)
4
(A)
6
6V
7V
V
GS
=10, 11V
1.0
2.0
3.0
8V
9V
810 12 14 16
AM18075v1
I
D
3
2
1
0
57V
GS
(V)
9
(A)
6810
0.5
1.5
2.5
V
DS
=20V
AM18085v1
10
6
4
2
0048
26
8
10
12
500
300
200
100
0
400
600
Q
g
(nC)
V
GS
(V) V
DS
V
DS
(V)
AM18076v1
R
DS(on)
2
1
0
0.0 0.8 I
D
(A)
(Ω)
0.4 1.2
3
V
GS
=10V
1.6
4
5
6
AM18077v1
C
100
10
1
0.1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
100
AM18078v1
E
oss
00V
DS
(V)
(µJ)
400
200
2
600 800
AM18079v1
Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
8/23 DocID024993 Rev 2
Figure 14. Normalized gate threshold voltage vs
temperature Figure 15. Normalized on-resistance vs
temperature
Figure 16. Normali zed V
DS
vs temperature Figure 17. Source- drain diode forward
characteristics
1.1
0.8
0.6
0.4
T
J
(°C)
0.5
0.7
0.9
1
1.2
-100 0
-50 100
50 150
V
GS(th)
(norm)
AM18082v1
I
D
=100 µA
1.5
1
0.5
0
-100 0T
J
(°C)
-50
2
100
50 150
I
D
=1 A
2.5 V
GS
=10 V
R
DS(on)
(norm)
AM18081v1
V
DS
-100 0T
J
(°C)
(norm)
-50 50 100
0.85
0.9
0.95
1
1.05
1.1 I
D
=1mA
AM18083v1
V
SD
01I
SD
(A)
(V)
0.5 1.5 2
0.5
0.6
0.7
0.8
T
J
=-50°C
T
J
=150°C
T
J
=25°C
0.9
1
AM18084v1
Figure 18. Maximum avalanche energy vs
starting T
J
E
AS
040 T
J
(°C)
(mJ)
20 100
60 80
0
10
20
30
40
120 140
50
60
AM18086v1
DocID024993 Rev 2 9/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Test circuits
3 Test circuits
Figure 19. Switching times test circuit for
resistive load Figure 20. Gate charge test circuit
Figure 21. Test circuit for inductive load
switching and diode recovery times Figure 22. Unclamped inductive load tes t circuit
Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform
AM01468v1
VGS
PW
VD
RG
RL
D.U.T.
2200
μF
3.3
μFVDD
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01470v1
A
D
D.U.T.
S
B
G
25 Ω
AA
B
B
RG
G
FAST
DIODE
D
S
L=100μH
μF
3.3 1000
μFVDD
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01472v1
V(BR)DSS
VDD
VDD
VD
IDM
ID
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
10/23 DocID024993 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID024993 Rev 2 11/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data
Figure 25. DPAK (TO-252) type A drawing
0068772_M_type_A
Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
12/23 DocID024993 Rev 2
Table 9. DPAK (TO-252) type A mechanical data
Dim. mm
Min. Typ. Max.
A2.20 2.40
A1 0.90 1.10
A2 0.03 0.23
b0.64 0.90
b4 5.20 5.40
c0.45 0.60
c2 0.48 0.60
D6.00 6.20
D1 5.10
E6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H 9.35 10.10
L1.00 1.50
(L1) 2.80
L2 0.80
L4 0.60 1.00
R0.20
V2 0° 8°
DocID024993 Rev 2 13/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data
Figure 26. DPAK (TO-252) type A footprint
(a)
a. All dimensions are in millimeters
Footprint_REV_M_type_A
Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
14/23 DocID024993 Rev 2
Figure 27. TO-220FP drawing
7012510_Rev_K_B
DocID024993 Rev 2 15/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data
Table 10. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
16/23 DocID024993 Rev 2
Figure 28. TO-2 20 drawing
BW\SH$B5HYB7
DocID024993 Rev 2 17/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data
Table 11. TO-220 mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
18/23 DocID024993 Rev 2
Figure 29. IPAK (TO-251) drawing
0068771_K
DocID024993 Rev 2 19/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data
Table 12. IPAK (TO-251) mechanical data
DIM mm.
min. typ. max.
A 2.20 2.40
A1 0.90 1.10
b 0.64 0.90
b2 0.95
b4 5.20 5.40
B5 0.30
c 0.45 0.60
c2 0.48 0.60
D 6.00 6.20
E 6.40 6.60
e 2.28
e1 4.40 4.60
H 16.10
L 9.00 9.40
L1 0.80 1.20
L2 0.80 1.00
V1 10°
Packagi ng infor matio n STD2N80 K5, STF2N8 0K5, ST P2N80 K5, ST U2N8 0K5
20/23 DocID024993 Rev 2
5 Packaging information
Figure 30. Tape for DPAK
P1
A0 D1
P0
F
W
E
D
B0
K0
T
User direction of feed
P2
10 pitches cumulative
tolerance on tape +/- 0.2 mm
User direction of feed
R
Bending radius
B1
For machine ref. only
including draft and
radii concentric around B0
AM08852v1
Top cover
tape
DocID024993 Rev 2 21/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Packaging information
Figure 31. Reel for DPAK
Table 13. DPAK tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 6.8 7 A 330
B0 10.4 10.6 B 1.5
B1 12.1 C 12.8 13.2
D 1.5 1.6 D 20.2
D1 1.5 G 16.4 18.4
E 1.65 1.85 N 50
F 7.4 7.6 T 22.4
K0 2.55 2.75
P0 3.9 4.1 Base qty. 2500
P1 7.9 8.1 Bulk qty. 2500
P2 1.9 2.1
R40
T 0.25 0.35
W 15.7 16.3
A
D
B
Full radius G measured at hub
C
N
REEL DIMENSIONS
40mm min.
Access hole
At slot location
T
Tape slot
in core for
tape start 25 mm min.
width
AM08851v2
Revision history STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
22/23 DocID024993 Rev 2
6 Revision history
Table 14. Document revision history
Date Revision Changes
11-Jul-2013 1 First release.
18-Feb-2014 2
– Added: IPAK package
– Modified: E
AS
value in Table 2
– Modified: R
thj-case
in Table 3
– Modified: typical values in Table 5, 6 and 7
– Added: Section 2.1: Electrical characteristics (curves)
– Updated: Figure 25, 26 and Table 9
– Added: Table 12 and Figure 29
– Minor text changes
DocID024993 Rev 2 23/23
STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
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