SILICON PNP TRANSISTOR
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Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
3083
Issue
3
Page 1 of
3
BFX29
• Hermetic TO-39 Metal package.
• Ideally suited for Switching
and General Purpose Applications
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 60V
VCEO Collector – Emitter Voltage 60V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 600mA
ICM Peak Collector Current 600mA
PD Total Power Dissipation at TA = 25°C 600mW
Derate Above 25°C 34mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Thermal Resistance, Junction To Ambient 292 °C/W
SILICON PNP TRANSISTOR
BFX29
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
3083
Issue
3
Page 2 of
3
ELECTRICAL CHARACTERISTICS
(TJ = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
IEBO Emitter Cut-Off Current
VEB = 5V IC = 0 220 500
nA
VEB = 3V IC = 0
4 100
ICBO Collector Cut-Off Current
VCB = 60V IE = 0 1.0 500
VCB = 50V IE = 0 0.5 50
Tj = 100°C 0.03 2 µA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 150mA IB = 15mA 0.15 0.40
V
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 30mA IB = 1.0mA 0.7 0.90
IC = 150mA IB = 15mA 0.85 1.30
hFE
(1)
Forward-current transfer
ratio
IC = 0.1mA VCE = 10V 20 218
-
IC = 1.0mA VCE = 10V 40 216
IC = 10mA VCE = 10V 50 210
IC = 50mA VCE = 10V 50 195
IC = 150mA VCE = 10V 40 175
DYNAMIC CHARACTERISTICS
fT Transition Frequency
IC = 50mA VCE = 10V
100 280 MHz
f = 100MHz TA = 25°C
Cobo Output Capacitance
VCB = 10V IE = 0
12 15
pF
f = 1.0MHz
Cibo Input Capacitance
VEB = 2V IC = 0
37 40
f = 1.0MHz
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
SILICON PNP TRANSISTOR
BFX29
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number
3083
Issue
3
Page 3 of
3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
39 (TO
-
205AD) METAL PACKAGE
Underside View
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
