PD - 96336 AUTOMOTIVE MOSFET AUIRF3305 HEXFET(R) Power MOSFET Features l l l l l l l l l V(BR)DSS D Advanced Planar Technology Low On-Resistance Dynamic dV/dT Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S 55V RDS(on) max. 8m ID 140A Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. TO-220AB G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS EAS (Tested ) IAR EAR TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy(Thermally limited) Single Pulse Avalanche Energy Tested Value Avalanche Current Repetitive Avalanche Energy Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds(1.6mm from case ) Mounting Torque, 6-32 or M3 screw c c dh g d i Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient A W W/C V mJ A mJ -55 to + 175 C 300 10 lbf in (1.1N m) y Thermal Resistance RJC RCS RJA Units 140 99 560 330 2.2 20 470 860 See Fig.12a, 12b, 15, 16 y Typ. Max. Units --- 0.50 --- 0.45 --- 62 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 11/02/10 AUIRF3305 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Min. Typ. Max. Units 55 --- --- 2.0 41 --- --- --- --- --- 0.055 --- --- --- --- --- --- --- --- --- 8.0 4.0 --- 25 250 200 -200 V V/C m Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage V S A nA Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Conditions VGS = 0V, ID = 250A Reference to 25C, ID = 1mA VGS = 10V, ID = 75A VDS = VGS, ID = 250A VDS = 25V, ID = 75A VDS = 55V, VGS = 0V VDS = 55V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V ej j j e j e Qg Qgs Qgd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance --- --- --- --- --- --- --- --- 100 21 45 16 88 43 34 4.5 150 --- --- --- --- --- --- --- LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance --- --- --- --- --- --- 3650 1230 450 4720 930 1490 --- --- --- --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz VGS = 0V, VDS = 1.0V, = 1.0MHz VGS = 0V, VDS = 44V, = 1.0MHz VGS = 0V, VDS = 0V to 44V nC ns nH pF ID = 75A VDS = 44V VGS = 10V VDD = 28V ID = 75A RG = 2.6 VGS = 10V Between lead, f Diode Characteristics Min. Typ. Max. IS Continuous Source Current Parameter --- --- 75 ISM (Body Diode) Pulsed Source Current --- --- 560 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 57 130 1.3 86 190 Units A c Conditions MOSFET symbol V ns nC showing the integral reverse p-n junction diode. TJ = 25C, IS = 75A TJ = 25C, IF = 75A di/dt = 100A/s e j, V j, V GS DD = 0V = 28V e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: This value determined from sample failure population. 100% tested to this value in production. (See fig. 11). Limited by TJmax, starting TJ = 25C, L = 0.17mH RG = 25, IAS = 75A, R is measured at TJ of approximately 90C. All AC and DC test conditions based on former package limited VGS =10V. Part not recommended for use above this value. current of 75A. Pulse width 1.0ms; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Repetitive rating; pulse width limited by max. junction temperature. 2 www.irf.com AUIRF3305 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model ESD Human Body Model Charged Device Model RoHS Compliant Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. 3L-TO-220 N/A Class M4(425V) (per AEC-Q101-002) Class H2 (4000V) (per AEC-Q101-001) Class C5 (1125V) (per AEC-Q101-005) Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF3305 1000 1000 BOTTOM TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 4.5V 10 4.5V 10 10 1 100 60s PULSE WIDTH Tj = 175C 60s PULSE WIDTH Tj = 25C 0.1 BOTTOM 0.1 100 Fig 1. Typical Output Characteristics 10 100 Fig 2. Typical Output Characteristics 80 Gfs, Forward Transconductance (S) 1000.0 ID, Drain-to-Source Current() 1 VDS, Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100.0 TJ = 175C 10.0 TJ = 25C 1.0 VDS = 25V 60s PULSE WIDTH 2.0 3.0 4.0 5.0 6.0 7.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics TJ = 25C 60 TJ = 175C 40 20 VDS = 10V 380s PULSE WIDTH 0.1 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 8.0 0 0 20 40 60 80 100 120 140 ID, Drain-to-Source Current (A) Fig 4. Typical Forward Transconductance Vs. Drain Current www.irf.com AUIRF3305 7000 VGS, Gate-to-Source Voltage (V) 6000 C, Capacitance (pF) 20 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 5000 Ciss 4000 3000 Coss 2000 1000 Crss ID= 75A 16 12 8 4 0 0 1 10 0 100 80 10000 ID, Drain-to-Source Current (A) 1000.0 TJ = 175C 100.0 10.0 TJ = 25C 1.0 1000 100 100sec 10 1msec 1 Tc = 25C Tj = 175C Single Pulse 10msec DC 0.1 0.1 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 160 OPERATION IN THIS AREA LIMITED BY R DS(on) VGS = 0V 0.0 120 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD, Reverse Drain Current (A) 40 QG Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) www.irf.com VDS = 44V VDS= 28V 2.4 1 10 100 1000 VDS , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRF3305 160 RDS(on) , Drain-to-Source On Resistance (Normalized) 2.5 ID , Drain Current (A) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 ID = 75A VGS = 10V 2.0 1.5 1.0 0.5 175 -60 -40 -20 T C , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 10. Normalized On-Resistance Vs. Temperature 1 Thermal Response ( ZthJC ) D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 0.01 J R1 R1 J 1 1 R2 R2 2 2 R3 R3 3 C Ri (C/W) i (sec) 0.1758 0.00045 3 Ci= i/Ri Ci i/Ri 0.001 0.228 0.004565 0.0457 0.01858 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com 15V D.U.T RG VGS 20V DRIVER L VDS + V - DD IAS A 0.01 tp Fig 12a. Unclamped Inductive Test Circuit EAS, Single Pulse Avalanche Energy (mJ) AUIRF3305 2000 I D 18A 26A BOTTOM 75A TOP 1600 1200 800 400 0 25 V(BR)DSS 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms VGS(th) Gate threshold Voltage (V) 4.0 QG 10 V QGS QGD VG Charge Fig 13a. Basic Gate Charge Waveform ID = 5.0A ID = 1.0A ID = 250A 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 TJ , Temperature ( C ) L DUT 0 VCC Fig 14. Threshold Voltage Vs. Temperature 1K Fig 13b. Gate Charge Test Circuit www.irf.com 7 AUIRF3305 Avalanche Current (A) 10000 1000 Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses. Note: In no case should Tj be allowed to exceed Tjmax 0.01 100 0.05 0.10 10 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 15. Typical Avalanche Current Vs.Pulsewidth EAR , Avalanche Energy (mJ) 500 TOP Single Pulse BOTTOM 1% Duty Cycle ID = 75A 400 300 200 100 0 25 50 75 100 125 150 Starting TJ , Junction Temperature (C) Fig 16. Maximum Avalanche Energy Vs. Temperature 8 175 Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 12a, 12b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav ) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav www.irf.com AUIRF3305 D.U.T Driver Gate Drive P.W. + - D= Period P.W. Period VGS=10V* Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer D.U.T. ISD Waveform + - - Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt RG * * * * VDD dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test + Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent - Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs VDS V GS RD D.U.T. RG + - VDD 10V Pulse Width 1 s Duty Factor 0.1 % Fig 18a. Switching Time Test Circuit VDS 90% 10% VGS td(on) tr t d(off) tf Fig 18b. Switching Time Waveforms www.irf.com 9 AUIRF3305 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUF3305 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com AUIRF3305 Ordering Information Base part Package Type AUIRF3305 TO-220 www.irf.com Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF3305 11 AUIRF3305 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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