IRFF330
N-Channel MOSFET.
VDSS = 400V
ID = 3A
RDS(ON) = 1Ω
ΩΩ
Ω
All Semelab hermetically sealed products can be
processed in accordance with the requirements
of BS, CECC and JAN, JANTX, JANTXV and
JANS specifications.
Parameter Min. Typ. Max. Units
VDSS Drain – Source Breakdown Voltage 400 V
ID Continuous Drain Current 3 A
PD Power Dissipation 25 W
RDS(ON) Static Drain – Source On–State Resistance 1 Ω
CISS Input Capacitance 620 pF
Qg Total Gate Charge 33 nC
ttd(on) Turn–On Delay Time 30 ns
ttr Rise Time 35 ns
ttd(off) Turn–Off Delay Time 55 ns
t
f
Fall Time 35 ns
This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.u
k
.
Semel ab Plc reserves the right to change test conditions, pa rameter limits and pack age dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissi on s dis co ver e d in its us e.
Generated
11-Oct-02
TO39 (TO205AF)
PINOUTS
1 – Source 2 – Gate 3 - Drain
N-Channel MOSFET
in a
Hermetically sealed TO39
Metal Package.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Dimensions in mm (inches).
0.89
(0.035)max.
12.70
(0.500)
min.
4.06 (0.16)
4.57 (0.18)
8.64 (0.34)
9.40 (0.37)
8.01 (0.315)
9.01 (0.355)
0.41 (0.016)
0.53 (0.021)
dia.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.53 (0.021)
2.54
(0.100)
5.08 (0.200)
typ.
45°
123
