BVP TD Internally Matched Power GaAs FETs aOR E FEATURES * High Output Power: Pjqp = 38.0dBm (Typ.) * High Gain: Gj gp = 8.0dB (Typ.) * High PAE: nNadd = 34% (Typ.) * Low IMg = -45dBc@Po = 27dBm * Broad Band: 6.4 ~ 7.2GHz * Impedance Matched Zin/Zout = 50 * Hermetically Sealed Package DESCRIPTION The FLM6472-6D is a power GaAs FET that is internally matched for stan- dard communication bands to provide optimum power and gain in a 50 ohm system. Fujitsus stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25C) Item Symbol Condition Rating Unit Drain-Source Voltage Vbs 15 Vv Gate-Source Voltage Vas 5 Vv Total Power Dissipation PT To = 25C 31.2 Ww Storage Temperature Tstg -65 to +175 C Channel Temperature Tch 175 C Fujitsu recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source operating voltage (Vps) should not exceed 10 volts. 2. The forward and reverse gate currents should not exceed 6.0 and -2.8 mA respectively with gate resistance of 10082. ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25C Item Unit Saturated Drain Current Ipss_| Vps =5V, Vas = 0V 2850 ee mA Transconductance gm Vps = 5V, Ips =1700mA - 1450 - mS Pinch-off Voltage Vp Vps = 5V, Ips =150mA -1.0 | -2.0 | -3.5 V Gate Source Breakdown Voltage | Vaso | IGs =-150uA 5 - - V Output Power at 1dB G.C.P. P1dB 37.0 | 38.0] - dBm Power Gain at 1dB G.C.P. Gigp | Vos =10V, 7.0 | 80] - dB Drain Current ldsr PS? RSS (TP) - | 15501 1900 mA Power-added Efficiency Nadd | Zs=Z) =50 ohm - 34 - % Gain Flatness AG - - +0.6 dB aot, intermodulation IM3 ae Af= 10 MHz 40 | -45 ; dBe Pout = 27dBm S.C.L. Thermal Resistance Rth Channel to Case - 40 | 48 C/W Channel Temperature Rise ATch | 10V x Idsr x Rth - - 80 C CASE STYLE: IB G.C.P.: Gain Compression Point, $.C.L.: Single Carrier Level 1998 Microwave Databook 400 Data SheetsFLM6472-6D roe) a0) SY Internally Matched Power GaAs FETs POWER DERATING CURVE OUTPUT POWER & IM3 vs. INPUT POWER 50 > Ee Vps=10V Ee = 40 m 33 fy = 7.2 GHz Li S 2 ay | 1227.21 GHz 4 3 2-tone test q S49 3 Z a NN ~ v4, ~ g 20 X = 27 YW" -30 .. af oO L/L oO = NN = 25 7 L -40 = g 2 | oO 10 Ss "| r \ O 23 -50 0 50 100 150 200 16 18 20 22 24 Case Temperature (C) Input Power (S.C.L.) (dBm) $.C.L.: Single Carrier Level OUTPUT POWER vs. FREQUENCY OUTPUT POWER vs. INPUT POWER DS= P1dB Vps=10V ~ * ~ 1) +268 Guz co Pin=31dBm oO L cS 38 cS 38 Pon 7 | g 3 A 5 36 = 36 7 ~ 45 o AN Let z B 34 a 34 Y |e so 8 3 3 Jet S 32 32 Zar <= 15 64 66 68 7.0 7.2 22 24 26 28 30 32 Frequency (GHz) Input Power (dBm) Data Sheets A401 1998 Microwave DatabookOVP ID foe) Internally Matched Power GaAs FETs aOR E o $84 s7o-- S49 | I SCALE FOR [Sy] S-PARAMETERS Vps = 10V, IDs = 1550mA FREQUENCY S11 S21 $12 $22 (MHZ) MAG ANG MAG ANG MAG ANG MAG = ANG 6200 .420 -122.8 3.221 149.2 .018 144.2 542 -120.3 6300 359 -140.2 3.296 137.8 .023 113.2 525 -132.7 6400 .300 -160.9 3.400 126.2 0314 90.5 .508 -146.2 6500 .246 173.7 3.516 114.0 .038 70.5 .490 -159.9 6600 212 142.3 3.556 101.2 .048 52.5 462 -174.0 6700 .201 106.9 3.597 88.8 .055 39.7 423 170.7 6800 217 72.7 3.627 76.8 061 25.4 384 153.7 6900 .250 44.5 3.656 64.0 .070 13.7 353 136.7 7000 .288 21.1 3.589 49.8 .074 1.8 310 119.1 7100 320 2.7 3.451 39.6 .076 -9.5 273 103.1 7200 352 -15.8 3.319 28.4 .079 -21.3 .249 81.3 7300 379 32.3 3.195 17.1 .079 -30.9 238 58.9 7400 .406 -47.8 3.097 5.8 .081 -39.5 226 36.7 1998 Microwave Databook 402 Data SheetsFLM6472-6D ree) FUJITSU Internally Matched Power GaAs FETs Jy = ro 2.0 Min. (0.079) > C 2-R1.620.15 (0.063) Case Style "IB" Metal-Ceramic Hermetic Package 12.90.2 (0.508) <i. val EE , 0.6 cle (0.024) . o|P oO 10.7 a (0.421) a colo oO [ Is, 12.0 A 4 (0.422) sg 17.0+0.15 No. (0.669) 21.0#0.15 (0.827) 1: Gate 2: Source (Flange) 3: Drain Unit: mm (Inches) Data Sheets 403 1998 Microwave Databook