
Supertex inc.
Supertex inc.
www.supertex.com
DN2535
Doc.# DSFP-DN2535
B062813
L = Lot Number
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
DN2535N5
LLLLLLLLL
YYWW
Features
►High input impedance
►Low input capacitance
►Fast switching speeds
►Low on-resistance
►Free from secondary breakdown
►Low input and output leakage
Applications
►Normally-on switches
►Solid state relays
►Converters
►Linear ampliers
►Constant current sources
►Power supply circuits
►Telecom
General Description
The Supertex DN2535 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefcient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
N-Channel Depletion-Mode
Vertical DMOS FETs
Absolute Maximum Ratings
Parameter Value
Drain-to-source voltage BVDSX
Drain-to-gate voltage BVDGX
Gate-to-source voltage ±20V
Operating and storage
temperature -55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Pin Conguration
Product Marking
3-Lead TO-220
3-Lead TO-92
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
SiDN
2535
YYWW
3-Lead TO-2203-Lead TO-92
Package may or may not include the following marks: Si or
Package may or may not include the following marks: Si or
GATE
SOURCE
DRAIN
GATE
SOURCE
DRAIN
Typical Thermal Resistance
Package θja
TO-92 132OC/W
TO-220 29OC/W
Ordering Information
Part Number Package Option Packing
DN2535N3-G TO-92 1000/Bag
DN2535N3-G P002
TO-92 2000/Reel
DN2535N3-G P003
DN2535N3-G P005
DN2535N3-G P013
DN2535N3-G P014
DN2535N5-G TO-220 50/Tube
Product Summary
BVDSX/BVDGX
RDS(ON)
(max)
IDSS
(min)
350V 25Ω150mA
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.