DISCRETE SEMICONDUCTORS DATA SHEET BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Product specification Supersedes data of 1998 Oct 02 2000 Oct 30 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors FEATURES MARKING * High power gain TYPE NUMBER * Low noise figure BFG505W N0 * High transition frequency BFG505W/X N1 * Gold metallization ensures excellent reliability. BFG505W/XR P0 CODE page PINNING 4 3 1 2 APPLICATIONS RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV). PIN Top view DESCRIPTION MBK523 BFG505W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter Fig.1 SOT343N. BFG505W/X (see Fig.1) DESCRIPTION NPN silicon planar epitaxial transistors in 4-pin dual-emitter SOT343N and SOT343R plastic packages. 1 collector 2 emitter 3 base 4 emitter alfpage BFG505W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter 3 4 2 1 Top view MSB842 Fig.2 SOT343R. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS open emitter MIN. TYP. MAX. UNIT - - 20 V - - 15 V VCBO collector-base voltage VCES collector-emitter voltage RBE = 0 IC collector current (DC) - - 18 mA Ptot total power dissipation Ts 85 C - - 500 mW hFE DC current gain IC = 5 mA; VCE = 6 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz - 0.2 - fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C - 9 - GHz GUM maximum unilateral power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - 19 - dB 12 - dB IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C pF |s21|2 insertion power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 15 16 - dB F noise figure s = opt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz - 1.9 - dB 2000 Oct 30 2 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter - 20 V VCES collector-emitter voltage RBE = 0 - 15 V VEBO emitter-base voltage open collector - 2.5 V IC collector current (DC) - 18 mA Ptot total power dissipation Ts 85 C; see Fig.3; note 1 - 500 mW Tstg storage temperature -65 +150 C Tj junction temperature - 175 C Note 1. Ts is the temperature at the soldering point of the collector pin. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts 85 C; note 1 Note 1. Ts is the temperature at the soldering point of the collector pin. MBG248 600 handbook, halfpage P tot (mW) 400 200 0 0 50 100 150 o 200 T s ( C) Fig.3 Power derating curve. 2000 Oct 30 3 VALUE UNIT 180 K/W Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS IC = 2.5 A ; IE = 0 MIN. TYP. MAX. UNIT 20 - - V 15 - - V 2.5 - - V - 50 nA 120 250 V(BR)CBO collector-base breakdown voltage V(BR)CES collector-emitter breakdown voltage IC = 10 A; RBE = 0 V(BR)EBO emitter-base breakdown voltage IE = 2.5 A; IC = 0 ICBO collector leakage current VCB = 6 V; IE = 0 - hFE DC current gain IC = 5 mA; VCE = 6 V see Fig.4 60 fT transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C; see Fig.6 - 9 - Cc collector capacitance IE = ie = 0; VCB = 6 V; f = 1 MHz - 0.3 - pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz - 0.4 - pF Cre feedback capacitance IC = 0; VCB = 6 V; f = 1 MHz; see Fig.5 - 0.2 - pF GUM maximum unilateral power gain; note 1 IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C - 19 - dB IC = 5 mA; VCE = 6 V; f = 2 GHz; Tamb = 25 C - 12 - dB GHz |s21|2 insertion power gain IC = 5 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C 15 16 - dB F noise figure s = opt; IC = 1.25 mA; VCE = 6 V; f = 900 MHz - 1.2 1.7 dB s = opt; IC = 5 mA; VCE = 6 V; f = 900 MHz - 1.6 2.1 dB s = opt; IC = 1.25 mA; VCE = 6 V; f = 2 GHz - 1.9 - dB PL1 output power at 1 dB gain compression IC = 5 mA; VCE = 6 V; f = 900 MHz; RL = 50 ; Tamb = 25 C - 4 - dBm ITO third order intercept point note 2 - 10 - dBm Notes s 21 2 1. GUM is the maximum unilateral power gain, assuming s12 is zero. G UM = 10 log -------------------------------------------------------dB. ( 1 - s 11 2 ) ( 1 - s 22 2 ) 2. IC = 5 mA; VCE = 6 V; RL = 50 ; Tamb = 25 C; fp = 900 MHz; fq = 902 MHz; measured at 2fp - fq = 898 MHz and 2fq - fp = 904 MHz. 2000 Oct 30 4 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors MRA639 250 MLC032 0.4 handbook, halfpage handbook, halfpage C re (pF) hFE 200 0.3 150 0.2 100 0.1 50 0 10-3 10-2 10-1 1 10 0 102 IC (mA) 0 VCE = 6 V. Fig.4 4 6 8 10 VCB (V) IC = 0; f = 1 MHz. DC current gain as a function of collector current; typical values. Fig.5 MLC033 12 handbook, halfpage fT (GHz) VCE = 6 V VCE = 3 V 8 4 0 10 1 1 10 2 I C (mA) 10 f = 1 GHz; Tamb = 25 C. Fig.6 2 Transition frequency as a function of collector current; typical values. 2000 Oct 30 5 Feedback capacitance as a function of collector-base voltage; typical values. Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors MLC034 30 MLC035 30 handbook, halfpage handbook, halfpage gain gain (dB) (dB) MSG G UM 20 20 G max MSG 10 0 G UM 10 0 4 8 10 I C (mA) 0 12 f = 900 MHz; VCE = 6 V. Fig.7 Fig.8 MLC036 50 8 10 I C (mA) 12 Gain as a function of collector current; typical values. MLC037 50 handbook, halfpage handbook, halfpage gain G UM (dB) 4 f = 2 GHz; VCE = 6 V. Gain as a function of collector current; typical values. gain 0 G UM (dB) 40 40 30 30 MSG MSG 20 20 10 10 0 0 10 10 2 10 3 f (MHz) 10 4 10 IC = 1.25 mA; VCE = 6 V. Fig.9 G max 2 10 3 f (MHz) 10 4 IC = 5 mA; VCE = 6 V. Gain as a function of frequency; typical values. 2000 Oct 30 10 Fig.10 Gain as a function of frequency; typical values. 6 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors MLC038 4 MRA650 5 handbook, halfpage handbook, halfpage Fmin F (dB) f = 900 MHz (dB) 4 Gass 3 2 f = 2000 MHz 1 1000 MHz 900 MHz 500 MHz 2 1 I C (mA) 10 5 Fmin 1000 MHz 900 MHz 500 MHz 0 10-1 10 2000 MHz 2000 MHz 1 0 10 1 (dB) 15 1000 MHz 3 20 Gass 0 1 IC (mA) -5 10 VCE = 6 V. VCE = 6 V. Fig.11 Minimum noise figure as a function of collector current; typical values. Fig.12 Associated available gain as a function of collector current; typical values. MLC039 4 MRA651 5 handbook, halfpageIC = 1.25 mA handbook, halfpage 5 mA Fmin F (dB) (dB) 4 20 Gass (dB) 15 Gass 3 3 10 2 5 2 I C = 5 mA 1 5 mA 1.25 mA 1 Fmin 0 1.25 mA 0 10 2 10 3 f (MHz) 0 102 10 4 VCE = 6 V. f (MHz) -5 104 VCE = 6 V. Fig.13 Minimum noise figure as a function of frequency; typical values. 2000 Oct 30 103 Fig.14 Associated available gain as a function of frequency; typical values. 7 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors pot. unst. region handbook, full pagewidth 90 1.0 1 135 0.8 45 2 0.5 0.6 stability 0.2 circle 180 Fmin = 1. 2 dB 0.2 0 0.5 OPT F = 1.5 dB 5 2 1 0.4 5 0.2 0 0 F = 2 dB F = 3 dB 0.2 5 0.5 -135 2 -45 1 MRA652 1.0 -90 f = 900 MHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 . Fig.15 Common emitter noise figure circles; typical values. handbook, full pagewidth 90 pot. unst. region 1.0 1 135 0.8 45 2 0.5 0.6 OPT 0.2 stability circle 180 0.4 5 Fmin = 1. 9 dB 0.2 0.2 0 0.5 F = 2.5 dB 1 2 5 0 0 F = 3 dB F = 4 dB 5 0.2 -135 0.5 2 -45 1 MRA653 -90 f = 2 GHz; VCE = 6 V; IC = 1.25 mA; Zo = 50 . Fig.16 Common emitter noise figure circles; typical values. 2000 Oct 30 8 1.0 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 3 GHz 1 2 5 0o 0 40 MHz 5 0.2 0.5 2 135 o 45 o 1 MLC040 1.0 90 o VCE = 6 V; IC = 5 mA; Zo = 50 . Fig.17 Common emitter input reflection coefficient (s11); typical values. 90 o handbook, full pagewidth 135 o 180 45 o 40 MHz o 15 12 9 3 GHz 6 0 3 135 o o 45 o 90 o MLC041 VCE = 6 V; IC = 5 mA. Fig.18 Common emitter forward transmission coefficient (s21); typical values. 2000 Oct 30 9 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors 90 o handbook, full pagewidth 135 o 45 o 3 GHz 40 MHz 180 o 0.25 0.20 0.15 0.10 0o 0.05 135 o 45 o 90 o MLC042 VCE = 6 ; IC = 5 mA. Fig.19 Common emitter reverse transmission coefficient (s12); typical values. 90 o handbook, full pagewidth 1.0 1 135 o 45 o 2 0.5 0.8 0.6 0.2 0.4 5 0.2 180 o 0.2 0 0.5 1 2 5 0o 0 40 MHz 0.2 5 3 GHz 0.5 2 135 o 45 o 1 MLC043 1.0 90 o VCE = 6 V; IC = 5 mA; Zo = 50 . Fig.20 Common emitter output reflection coefficient (s22); typical values. 2000 Oct 30 10 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors SPICE parameters for the BFG505W die SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER VALUE (1) UNIT 1 IS 134.1 aA 36 VJS 750.0 mV 2 BF 180.0 - 37 (1) MJS 0.000 - 3 NF 0.988 - 38 FC 0.897 - 4 VAF 38.34 V Note 5 IKF 150.0 mA 6 ISE 27.81 fA 1. These parameters have not been extracted, the default values are shown. 7 NE 2.051 - 8 BR 55.19 - 9 NR 0.982 - 10 VAR 2.459 V 11 IKR 2.920 mA 12 ISC 17.45 aA 13 NC 1.062 - 14 RB 20.00 15 IRB 1.000 A 16 RBM 20.00 17 RE 1.171 18 RC 4.350 - 19 (1) C cb handbook, halfpage L1 LB B L2 B' C be C' C E' Cce LE MBC964 L3 XTB 0.000 (1) EG 1.110 eV 21 (1) XTI 3.000 - 22 CJE 284.7 fF 23 VJE 600.0 mV 24 MJE 0.303 - 25 TF 7.037 ps 26 XTF 12.34 - 27 VTF 1.701 V 28 ITF 30.64 mA Cbe 70 fF 29 PTF 0.000 deg Ccb 50 fF 115 fF 20 E QLB = 50; QLE = 50; QLB,E(f) = QLB,E(f/fc) fc = scaling frequency = 1 GHz. Fig.21 Package equivalent circuit SOT343N; SOT343R. List of components (see Fig.21) DESIGNATION VALUE UNIT 30 CJC 242.4 fF Cce 31 VJC 188.6 mV L1 0.34 nH 32 MJC 0.041 - L2 0.10 nH XCJC 0.130 - L3 0.25 nH TR 1.332 ns LB 0.40 nH CJS 0.000 F LE 0.40 nH 33 34 35 (1) 2000 Oct 30 11 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors PACKAGE OUTLINES Plastic surface mounted package; 4 leads SOT343N D E B A X HE y v M A e 4 3 Q A A1 c 1 2 b1 bp w M B Lp e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343N 2000 Oct 30 EUROPEAN PROJECTION 12 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 2000 Oct 30 EUROPEAN PROJECTION 13 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Note 1. Please consult the most recently issued data sheet before initiating or completing a design. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2000 Oct 30 14 Philips Semiconductors Product specification BFG505W; BFG505W/X; BFG505W/XR NPN 9 GHz wideband transistors NOTES 2000 Oct 30 15 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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