BFG505XR - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1998 Oct 02 2000 Oct 30

DISCRETE SEMICONDUCTORS

BFG505W; BFG505W/X;

BFG505W/XR

NPN 9 GHz wideband transistors

2000 Oct 30 2

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

FEATURES

•High power gain

•Low noise figure

•High transition frequency

•Gold metallization ensures

excellent reliability.

APPLICATIONS

RF front end applications in the GHz

range, such as analog and digital

cellular telephones, cordless

telephones (CT2, CT3, PCN, DECT,

etc.), radar detectors, pagers,

satellite television tuners (SATV).

DESCRIPTION

NPN silicon planar epitaxial

transistors in 4-pin dual-emitter

SOT343N and SOT343R plastic

packages.

MARKING

PINNING

TYPE NUMBER CODE

BFG505W N0

BFG505W/X N1

BFG505W/XR P0

PIN DESCRIPTION

BFG505W (see Fig.1)

1 collector

2 base

3 emitter

4 emitter

BFG505W/X (see Fig.1)

1 collector

2 emitter

3 base

4 emitter

BFG505W/XR (see Fig.2)

1 collector

2 emitter

3 base

4 emitter

Fig.1 SOT343N.

age

Top view

MBK523

Fig.2 SOT343R.

lfpage

Top view

MSB842

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

VCBO collector-base voltage open emitter −−20 V

VCES collector-emitter voltage RBE =0 −−15 V

ICcollector current (DC) −−18 mA

Ptot total power dissipation Ts≤85 °C−−500 mW

hFE DC current gain IC= 5 mA; VCE = 6 V 60 120 250

Cre feedback capacitance IC= 0; VCB = 6 V; f = 1 MHz −0.2 −pF

fTtransition frequency IC= 5 mA; VCE = 6 V; f = 1 GHz; Tamb =25°C−9−GHz

GUM maximum unilateral

power gain IC= 5 mA; VCE = 6 V; f = 900 MHz; Tamb =25°C−19 −dB

IC= 5 mA; VCE = 6 V; f = 2 GHz; Tamb =25°C12−dB

|s21|2insertion power gain IC= 5 mA; VCE = 6 V; f = 900 MHz; Tamb =25°C15 16 −dB

F noise ﬁgure Γs=Γ

opt; IC= 1.25 mA; VCE = 6 V; f = 2 GHz −1.9 −dB

2000 Oct 30 3

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −20 V

VCES collector-emitter voltage RBE =0 −15 V

VEBO emitter-base voltage open collector −2.5 V

ICcollector current (DC) −18 mA

Ptot total power dissipation Ts≤85 °C; see Fig.3; note 1 −500 mW

Tstg storage temperature −65 +150 °C

Tjjunction temperature −175 °C

THERMAL CHARACTERISTICS

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point Ts≤85 °C; note 1 180 K/W

Fig.3 Power derating curve.

handbook, halfpage

0 50 100 200

400

MBG248

150 T ( C)

Ptot

(mW)

600

200

2000 Oct 30 4

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

CHARACTERISTICS

Tj=25°C unless otherwise specified.

Notes

1. GUM is the maximum unilateral power gain, assuming s12 is zero.

2. IC= 5 mA; VCE =6V; R

L=50Ω; Tamb =25°C;

fp= 900 MHz; fq= 902 MHz;

measured at 2fp−fq= 898 MHz and 2fq−fp= 904 MHz.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage IC= 2.5 µA; I

E=0 20 −−V

(BR)CES collector-emitter breakdown voltage IC=10µA; RBE =0 15 −−V

(BR)EBO emitter-base breakdown voltage IE= 2.5 µA; IC= 0 2.5 −−V

CBO collector leakage current VCB =6V; I

E=0 −−50 nA

hFE DC current gain IC= 5 mA; VCE = 6 V see Fig.4 60 120 250

fTtransition frequency IC= 5 mA; VCE = 6 V; f = 1 GHz;

Tamb =25°C; see Fig.6 −9−GHz

Cccollector capacitance IE=i

e= 0; VCB =6V; f=1MHz −0.3 −pF

Ceemitter capacitance IC=i

c= 0; VEB = 0.5 V; f = 1 MHz −0.4 −pF

Cre feedback capacitance IC= 0; VCB = 6 V; f = 1 MHz;

see Fig.5 −0.2 −pF

GUM maximum unilateral power gain;

note 1 IC= 5 mA; VCE = 6 V; f = 900 MHz;

Tamb =25°C−19 −dB

IC= 5 mA; VCE = 6 V; f = 2 GHz;

Tamb =25°C−12 −dB

|s21|2insertion power gain IC= 5 mA; VCE = 6 V; f = 900 MHz;

Tamb =25°C15 16 −dB

F noise ﬁgure Γs=Γ

opt; IC= 1.25 mA; VCE =6V;

f = 900 MHz −1.2 1.7 dB

Γs=Γ

opt; IC= 5 mA; VCE =6V;

f = 900 MHz −1.6 2.1 dB

Γs=Γ

opt; IC= 1.25 mA; VCE =6V;

f = 2 GHz −1.9 −dB

PL1 output power at 1 dB gain

compression IC= 5 mA; VCE = 6 V; f = 900 MHz;

RL=50Ω; Tamb =25°C−4−dBm

ITO third order intercept point note 2 −10 −dBm

GUM 10 s21 2

11 2

–()1s

22 2

–()

-------------------------------------------------------- dB.log=

2000 Oct 30 5

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

VCE =6V.

Fig.4 DC current gain as a function of collector

current; typical values.

handbook, halfpage

250

100

150

hFE

200

MRA639

10−310−210−1110

(mA)

102

IC= 0; f = 1 MHz.

Fig.5 Feedback capacitance as a function of

collector-base voltage; typical values.

handbook, halfpage

MLC032

24 V (V)

Cre

(pF)

0.4

0.3

0.2

0.1

810

Fig.6 Transition frequency as a function of

collector current; typical values.

f = 1 GHz; Tamb =25°C.

handbook, halfpage

MLC033

0110 1102

10 I (mA)

(GHz)

TV = 6 V

V = 3 V

2000 Oct 30 6

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

f = 900 MHz; VCE =6V.

Fig.7 Gain as a function of collector current;

typical values.

handbook, halfpage

048 12

MLC034

gain

(dB)

I (mA)

MSG

GUM

f = 2 GHz; VCE =6V.

Fig.8 Gain as a function of collector current;

typical values.

handbook, halfpage

048 12

MLC035

gain

(dB)

I (mA)

MSG GUM

Gmax

IC= 1.25 mA; VCE =6V.

Fig.9 Gain as a function of frequency; typical

values.

handbook, halfpage

010

MLC036

102103104

gain

(dB)

f (MHz)

GUM

MSG

Fig.10 Gain as a function of frequency; typical

values.

IC= 5 mA; VCE =6V.

handbook, halfpage

010

MLC037

102103104

gain

(dB)

f (MHz)

GUM

Gmax

MSG

2000 Oct 30 7

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

Fig.11 Minimum noise figure as a function of

collector current; typical values.

VCE =6V.

handbook, halfpage

MLC038

(dB)

I (mA)

f = 2000 MHz

1000 MHz

900 MHz

500 MHz

10110 1

Fig.12 Associated available gain as a function of

collector current; typical values.

VCE =6V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

IC (mA)

MRA650

2000 MHz

1000 MHz

2000 MHz

1000 MHz

f = 900 MHz

Fmin

900 MHz

500 MHz

Gass

10−1

Fig.13 Minimum noise figure as a function of

frequency; typical values.

VCE =6V.

handbook, halfpage

MLC039

(dB)

f (MHz) 104

103

102

I = 5 mA

1.25 mA

Fig.14 Associated available gain as a function of

frequency; typical values.

VCE =6V.

handbook, halfpage

−5

Gass

(dB)

Fmin

(dB)

f (MHz)

MRA651

102104

103

Gass

5 mA Fmin

5 mA

1.25 mA

IC = 1.25 mA

2000 Oct 30 8

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

Fig.15 Common emitter noise figure circles; typical values.

f = 900 MHz; VCE = 6 V; IC= 1.25 mA; Zo=50Ω.

handbook, full pagewidth

MRA652

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2

stability

circle

pot. unst.

region

0.5 1 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

F = 3 dB

F = 2 dB

F = 1.5 dB

Fmin = 1. 2 dB

ΓOPT

Fig.16 Common emitter noise figure circles; typical values.

handbook, full pagewidth

MRA653

0.2

0.6

0.4

0.8

1.0

0.5

0.2

0.5

0.2 0.5 2 5

180°

−135°

−90°

−45°

0°

45°

90°

135°

stability

circle

pot. unst.

region

F = 3 dB

F = 4 dB

F = 2.5 dB

Fmin = 1. 9 dB

ΓOPT

f = 2 GHz; VCE = 6 V; IC= 1.25 mA; Zo=50Ω.

2000 Oct 30 9

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

Fig.17 Common emitter input reflection coefficient (s11); typical values.

handbook, full pagewidth

MLC040

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

45o

90o

135o

0.5

0.2

0.5

0.2

180 0.2 1

00.5

40 MHz

3 GHz

VCE = 6 V; IC=5mA;Z

o=50Ω.

Fig.18 Common emitter forward transmission coefficient (s21); typical values.

handbook, full pagewidth

MLC041

90o

135o

180o

90o

15 12 9 6 3

45o

135o45o

40 MHz 3 GHz

VCE = 6 V; IC= 5 mA.

2000 Oct 30 10

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

Fig.19 Common emitter reverse transmission coefficient (s12); typical values.

handbook, full pagewidth

MLC042

90o

135o

180o

90o

0.25 0.20 0.15 0.10 0.05

45o

135o45o

40 MHz

3 GHz

VCE = 6 ; IC= 5 mA.

Fig.20 Common emitter output reflection coefficient (s22); typical values.

handbook, full pagewidth

MLC043

00o

0.2

0.6

0.4

0.8

1.0

45o

90o

135o

180o

45o

90o

135o

0.5

0.2

0.5

0.2 0.5 2

40 MHz

3 GHz

0.2

1 5

VCE = 6 V; IC= 5 mA; Zo=50Ω.

2000 Oct 30 11

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

SPICE parameters for the BFG505W die

SEQUENCE No. PARAMETER VALUE UNIT

1 IS 134.1 aA

2 BF 180.0 −

3 NF 0.988 −

4 VAF 38.34 V

5 IKF 150.0 mA

6 ISE 27.81 fA

7 NE 2.051 −

8 BR 55.19 −

9 NR 0.982 −

10 VAR 2.459 V

11 IKR 2.920 mA

12 ISC 17.45 aA

13 NC 1.062 −

14 RB 20.00 Ω

15 IRB 1.000 µA

16 RBM 20.00 Ω

17 RE 1.171 Ω

18 RC 4.350 Ω

19 (1) XTB 0.000 −

20 (1) EG 1.110 eV

21 (1) XTI 3.000 −

22 CJE 284.7 fF

23 VJE 600.0 mV

24 MJE 0.303 −

25 TF 7.037 ps

26 XTF 12.34 −

27 VTF 1.701 V

28 ITF 30.64 mA

29 PTF 0.000 deg

30 CJC 242.4 fF

31 VJC 188.6 mV

32 MJC 0.041 −

33 XCJC 0.130 −

34 TR 1.332 ns

35 (1) CJS 0.000 F

Note

1. These parameters have not been extracted, the

default values are shown.

List of components (see Fig.21)

36 (1) VJS 750.0 mV

37 (1) MJS 0.000 −

38 FC 0.897 −

DESIGNATION VALUE UNIT

Cbe 70 fF

Ccb 50 fF

Cce 115 fF

L1 0.34 nH

L2 0.10 nH

L3 0.25 nH

LB0.40 nH

LE0.40 nH

SEQUENCE No. PARAMETER VALUE UNIT

QLB= 50; QLE= 50; QLB,E(f) = QLB,E√(f/fc)

fc= scaling frequency = 1 GHz.

Fig.21 Package equivalent circuit SOT343N;

SOT343R.

handbook, halfpage

MBC964

CB' C'

L1 L2

Ccb

Cbe ce

2000 Oct 30 12

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

PACKAGE OUTLINES

UNIT A1

max bpcD E

pQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

SOT343N

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 4 leads SOT343N

wMB

97-05-21

2000 Oct 30 13

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT343R

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; reverse pinning; 4 leads SOT343R

wMB

97-05-21

UNIT A1

max bpcD E

pQwv

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

2000 Oct 30 14

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

attheseoratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythatsuchapplicationswill be

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusing orsellingtheseproducts

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofanyoftheseproducts,conveys nolicence ortitle

under any patent, copyright, or mask work right to these

products,and makes norepresentationsor warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 Oct 30 15

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistors BFG505W; BFG505W/X;

BFG505W/XR

NOTES

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Internet: http://www.semiconductors.philips.com

2000 70

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Printed in The Netherlands 613516/04/pp16 Date of release: 2000 Oct 30 Document order number: 9397 750 07541