This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0873 (2SB873) Silicon PNP epitaxial planar type For low-frequency power amplification For DC-DC converter For stroboscope Unit: mm 4.90.2 8.60.2 M Di ain sc te on na tin nc ue e/ d 5.90.2 Features 13.50.5 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0.7+0.3 -0.2 0.70.1 * Low collector-emitter saturation voltage VCE(sat) * Large collector current IC Absolute Maximum Ratings Ta = 25C Symbol Rating Unit Collector-base voltage (Emitter open) VCBO -30 V Collector-emitter voltage (Base open) VCEO -20 V VEBO -7 V Collector current IC -5 A Peak collector current ICP -10 A Collector power dissipation PC 1 W Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Emitter-base voltage (Collector open) 0.45+0.2 -0.1 (1.27) 0.45+0.2 -0.1 (1.27) 1 2 3 (3.2) Parameter 2.540.15 1: Emitter 2: Collector 3: Base EIAJ: SC-51 TO-92L-A1 Package Electrical Characteristics Ta = 25C 3C ue Symbol Conditions Min VCEO IC = -1 mA, IB = 0 -20 Emitter-base voltage (Collector open) VEBO IE = -10 A, IC = 0 -7 Di sc Parameter Collector-base cutoff current (Emitter open) ICBO VCB = -10 V, IE = 0 Emitter-base cutoff current (Collector open) IEBO VEB = -5 V, IC = 0 Forward current transfer ratio *1, 2 hFE VCE = -2 V, IC = -2 A VCE(sat) IC = -3 A, IB = - 0.1 A te na nc e/ on tin Collector-emitter voltage (Base open) Collector-emitter saturation voltage *1 VCB = -6 V, IE = 50 mA, f = 200 MHz fT M ain Transition frequency Collector output capacitance (Common-emitter reverse transfer) VCB = -20 V, IE = 0, f = 1 MHz Cob Typ 90 Max Unit V V -100 nA -100 nA 625 -1 120 V MHz 85 pF Pl Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *1: Pulse measurement *2: Rank classification Rank P Q R hFE 90 to 135 120 to 205 180 to 625 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00061BED 1 This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0873 PC Ta IC VCE Ta = 25C IB = -40 mA -35 mA -5 1.0 Collector current IC (A) -4 -10 -30 mA -25 mA -20 mA -15 mA VCE = -2 V 25C Ta = 75C -8 M Di ain sc te on na tin nc ue e/ d 0.8 -12 Collector current IC (A) Collector power dissipation PC (W) IC VBE -6 1.2 0.6 0.4 -2 -5 mA 20 40 60 0 80 100 120 140 160 -2 -1 mA -2 0 -4 -6 -8 -10 0 -12 0 - 0.4 - 0.8 VCE = -2 V Ta = 75C 25C -25C - 0.01 - 0.01 - 0.1 -1 -25C 300 200 100 - 0.1 -1 -10 Collector current IC (A) on Di sc Safe operation area -100 Collector current IC (A) te na 160 nc e/ IE = 0 f = 1 MHz Ta = 25C M ain 120 80 Single pulse Ta = 25C ICP -10 IC t = 10 ms t=1s -1 Pl Collector output capacitance C (pF) (Common base, input open circuited) ob Cob VCB 200 - 0.1 40 0 -1 -10 -100 Collector-base voltage VCB (V) - 0.01 - 0.1 -1 -10 -100 Collector-emitter voltage VCE (V) SJC00061BED -2.0 fT I E VCB = -6 V Ta = 25C 200 160 120 80 40 0 1 10 Emitter current IE (mA) tin ue Collector current IC (A) 25C 400 0 - 0.01 -10 Transition frequency fT (MHz) Forward current transfer ratio hFE -1 500 -1.6 240 Ta = 75C -10 -1.2 Base-emitter voltage VBE (V) hFE IC 600 IC / IB = 30 - 0.1 2 -4 Collector-emitter voltage VCE (V) VCE(sat) IC -100 -6 d p lan inc ea se ed lud p lan m m es ht visi tp t f ed ain ain foll :// ol d d te te ow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. 0 Ambient temperature Ta (C) Collector-emitter saturation voltage VCE(sat) (V) -10 mA -1 0.2 0 -3 -25C 100 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products, and no license is granted under any intellectual property right or other right owned by our company or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. pla d in ea ne clu se pla m d de v ht isi ne ai ma s fo tp t f :// ol d d d nte inte llow ww lo is is na n i w. win con con nce anc ng f se g U tin tin t e ou m R ue ue yp typ r P ico L d d e e ro n. ab typ ty du pa ou e pe ct d na t l life so ate cy nic st cle .co inf sta .jp orm ge /e a n/ tio . n. M Di ain sc te on na tin nc ue e/ d (3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: - Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. - Any applications other than the standard applications intended. (4) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions (operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS, thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages. Pl M ain te na nc e /D isc on tin ue (7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.