NTE5552−I, NTE5554−I,
NTE5556−I, NTE5558−I
Silicon Controlled Rectifier (SCR)
25 Amp, TO220AB
Isolated Tab
Description:
The NTE5552−I thru NTE5558−I are 25 Amp SCR’s designed primarily for half−wave AC control
applications, such as motor controls, overvoltage crowbar protection, capacitive discharge ignition,
voltage regulation, and welding equipment.
Features:
DSuitable for General Purpose AC Switching
DIGT 40mA Max.
DIsolated Tab
Absolute Maximum Ratings: (TA = +25_C unless otherwise specified)
Repetitive Peak Off−State Voltage, VDRM
NTE5552−I 200V.................................................................
NTE5554−I 400V.................................................................
NTE5556−I 600V.................................................................
NTE5558−I 800V.................................................................
Peak Reverse Blocking Voltage, VRRM
NTE5552−I 200V.................................................................
NTE5554−I 400V.................................................................
NTE5556−I 600V.................................................................
NTE5558−I 800V.................................................................
Maximum Peak Reverse Gate Voltage, VRGM 5V...........................................
RMS On−State Current (Full Sine Wave, TC = +75_C), IT(RMS) 25A...........................
Average On−State Current (TC = +75_C), IT(AV) 16A........................................
Non−Repetitive Surge Peak On−State Current (Full Cycle, TJ Initial = +25_C), ITSM
F = 50Hz 320A...................................................................
F = 60Hz 350A...................................................................
I2t Value for Fusing (tp = 10ms), I2t 510A2s................................................
Critical Rate of Rise of On−State Current (IG = 2 x IGT
, tr < 100ns, TJ = +125_C), di/dt
NTE5552−I, NTE5554−I, NTE5556−I 100A/ms.......................................
NTE5558−I 50A/ms...............................................................
Forward Peak Gate Current (tp = 20ms, TJ = +125_C), IGM
NTE5552−I, NTE5554−I, NTE5556−I2A............................................
NTE5558−I 4A...................................................................
Average Gate Power Dissipation (TJ = +125_C), PG(AV) 1W.................................
Isolation Voltage, VISO 2500VRMS
........................................................
Rev. 5−14
Absolute Maximum Ratings (Cont’d): (TA = +25_C unless otherwise specified)
Operating Junction Temperature Range, TJ−40_ to +125_C.................................
Storage Temperature Range, Tstg −40_ to +150_C.........................................
Thermal Resistance, Junction−to−Case, RthJC 1.9_C/W.....................................
Thermal Resistance, Junction−to−Ambient, RthJA 60_C/W...................................
Electrical Characteristics: (TC = +25_C unless otherwise noted.)
Parameter Symbol Min Typ Max Unit
Gate Trigger Current (VD = 12V, RL = 30W) IGT − − 40 mA
Gate Trigger Voltage (VD = 12V, RL = 30W) VGT − − 1.3 V
Gate Non−Trigger Voltage
(VD = Rated VDRM, RL =3.3kW, TJ = +125_C)
VGD 0.2 − − V
Holding Current (IT = 500mA, Gate Open) IH− − 50 mA
Latching Current (IG = 1.2 IGT) IL− − 90 mA
Critical Rate of Rise of Off−State Voltage
(VD = 67% VDRM, Gate Open, TJ = +125_C)
dv/dt 1000 − − V/ms
Forward “ON” Voltage
NTE5558−I (ITM = 32A, tp = 380ms, TJ = +25_C)
All Other Devices (ITM = 50A, tp = 380ms, TJ = +25_C)
VTM −
−
−
−
1.6
1.6
V
V
Peak Forward or Reverse Blocking Current,
(Rated VDRM or VRRM)T
J = +25_C
TJ = +125_C
IDRM, IRRM
−
−
−
−
5
4
mA
mA
.408 (10.36)
Max
.512
(13.0)
Max
.503
(12.78)
Min
.153 (3.89)
Dia Max
Isol
.037 (0.94)
Max
.100 (2.54)
Cathode
Anode
Gate
.108
(2.74)
.052 (1.32)
Max
.190 (4.83)
Max
.127
(3.23)
Max
