BF2030... Silicon N-Channel MOSFET Tetrode * For low noise, high gain controlled input stages up to 1GHz * Operating voltage 5V Drain AGC HF Input G2 G1 R G1 HF Output + DC GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution! Class 2 (2000V - 4000V) pin to pin Human Body Model Type Package Pin Configuration Marking BF2030 SOT143 1= S 2=D 3=G2 4=G1 - - NDs BF2030R SOT143R 1= D 2=S 3=G1 4=G2 - - NDs BF2030W SOT343 1= D 2=S 3=G1 4=G2 - - NDs Maximum Ratings Parameter Symbol Value Drain-source voltage VDS Continuous drain current ID 40 Gate 1/ gate 2-source current IG1/2SM 10 Gate 1 (external biasing) +VG1SE 6 Total power dissipation Ptot 8 V mA V mW TS 76 C, BF2030, BF2030R 200 TS 94 C, BF2030W 200 Storage temperature Tstg -55 ... 150 Channel temperature Tch 150 1 Unit C Sep-29-2004 BF2030... Thermal Resistance Parameter Symbol Channel - soldering point 1) Rthchs Value Unit K/W BF2030/ BF2030R 370 BF2030W 280 Electrical Characteristics Parameter Symbol Values Unit min. typ. max. V(BR)DS 10 - - +V(BR)G1SS 6 - 15 +V(BR)G2SS 6 - 15 +IG1SS - - 50 +IG2SS - - 50 IDSS - - 50 A IDSX - 12 - mA VG1S(p) 0.3 0.5 - V VG2S(p) 0.3 0.6 - DC Characteristics Drain-source breakdown voltage V ID = 20 A, VG1S = 0 , VG2S = 0 Gate1-source breakdown voltage +IG1S = 10 mA, V G2S = 0 , VDS = 0 Gate2-source breakdown voltage +IG2S = 10 mA, V G1S = 0 , VDS = 0 Gate1-source leakage current nA VG1S = 5 V, VG2S = 0 , VDS = 0 Gate2-source leakage current VG2S = 5 V, VG1S = 0 , VDS = 0 Drain current VDS = 5 V, VG1S = 0 , VG2S = 4 V Drain-source current VDS = 5 V, VG2S = 4 V, RG1 = 100 k Gate1-source pinch-off voltage VDS = 5 V, VG2S = 4 V, ID = 20 A Gate2-source pinch-off voltage VDS = 5 V, I D = 20 A 1For calculation of R thJA please refer to Application Note Thermal Resistance 2 Sep-29-2004 BF2030... Electrical Characteristics Symbol Parameter AC Characteristics Values Unit min. typ. max. 27 31 - mS Cg1ss - 2.4 2.8 pF Cdss - 1.3 - 20 23 - dB - 1.5 2.2 dB 40 50 - (verified by random sampling) Forward transconductance gfs VDS = 5 V, I D = 10 mA, VG2S = 4 V Gate1 input capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Output capacitance VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 1 MHz Power gain Gp VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz Noise figure F VDS = 5 V, I D = 10 mA, VG2S = 4 V, f = 800 MHz G p Gain control range VDS = 5 V, V G2S = 4...0 V, f = 800 MHz 3 Sep-29-2004 BF2030... Total power dissipation Ptot = (TS) Total power dissipation Ptot = (TS) BF2030, BF2030R BF2030W 220 220 mA 180 180 160 160 P tot P tot mW 140 140 120 120 100 100 80 80 60 60 40 40 20 20 0 0 15 30 45 60 75 90 105 120 C 0 0 150 15 30 45 60 75 90 105 120 C TS 150 TS Drain current ID = (IG1) Output characteristics ID = (V DS) VG2S = 4V VG2S = 4V VG1S = Parameter 20 28 mA mA 1.4V 24 16 22 1.3V 14 18 ID ID 20 12 16 1.2V 10 14 12 8 1.1V 10 8 6 6 4 1V 4 0 0 0.8V 2 2 10 20 30 40 50 60 70 80 A 0 0 100 IG1 1 2 3 4 5 6 7 8 V 10 VDS 4 Sep-29-2004 BF2030... Gate 1 current IG1 = (V G1S) Gate 1 forward transconductance VDS = 5V g fs = (ID) VDS = 5V, VG2S = Parameter VG2S = Parameter 40 210 A 4V mS 4V 180 3.5V 165 3V 30 g fs I G1 150 135 3V 120 25 2.5V 20 105 90 2.5V 60 2V 15 75 2V 10 45 30 5 15 0 0 0.4 0.8 1.2 1.6 2 V 2.4 0 0 3 4 8 12 16 20 24 mA VDS Drain current ID = (VG1S) VDS = 5V Drain current ID = (V GG) VDS = 5V, VG2S = 4V, RG1 = 100k VG2S = Parameter (connected to VGG, V GG=gate1 supply voltage) 30 mA 30 ID 13 mA 4V 11 24 10 3V 22 9 ID ID 20 18 8 7 16 2V 14 6 12 5 10 4 1.5V 8 3 6 2 4 1 2 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V 0 0 2 VG1S 0.5 1 1.5 2 2.5 3 3.5 4 V 5 VGG 5 Sep-29-2004 BF2030... Drain current ID = (VGG) Crossmodulation Vunw = (AGC) VG2S = 4V VDS = 5 V RG1 = Parameter in k 120 28 mA dBV 70 24 80 22 110 V unw 20 ID 100 18 105 120 16 100 14 12 95 10 8 90 6 4 85 2 0 0 1 2 3 4 5 6 V 80 0 8 10 VGG=VDS 20 30 40 dB 55 AGC Cossmodulation test circuit VAGC VDS 4n7 R1 10 kOhm 2.2 H 4n7 4n7 RL 50 Ohm 4n7 RGEN 50 Ohm RG1 50 Ohm VGG 6 Sep-29-2004 Package SOT143 Package Outline 1.1 MAX. 2.9 0.1 B 1.9 +0.1 0.8 -0.05 1 2.6 MAX. 3 2 10 MAX. 4 +0.2 acc. to DIN 6784 10 MAX. 1.3 0.1 0.1 MAX. A 0.55 -0.1 0.4 +0.1 -0.05 0.08...0.15 1.7 0.25 M 2... 30 B 0.20 M A Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 1.2 0.8 0.8 Marking Layout Manufacturer Pin 1 Date code (Year/Month) 2003, July Type code BFP181 Example Packing Code E6327: Reel o180 mm = 3.000 Pieces/Reel Code E6433: Reel o330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 Package SOT143R Package Outline 1.1 MAX. 0.1 MAX. 2.9 0.1 B 0.25 +0.1 3 1 2 +0.1 0.8 -0.05 0.4 +0.1 -0.05 1.7 0.25 M 10 MAX. 1.3 0.1 +0.2 acc. to DIN 6784 4 10 MAX. A 2.6 MAX. 1.9 0.08...0.15 2... 30 B 0.20 M A Foot Print 1.2 0.8 0.9 1.1 0.9 0.8 0.8 0.8 1.2 Marking Layout Reverse bar Date code (Year/Month) Pin 1 2003, July Manufacturer Type code BFP181R Example Packing Code E6327: Reel o180 mm = 3.000 Pieces/Reel Code E6433: Reel o330 mm = 10.000 Pieces/Reel 0.2 2.6 8 4 Pin 1 3.15 1.15 Package SOT343 Package Outline 0.9 0.1 2 0.2 1.3 0.1 MAX. 0.15 1 2 A 0.1 1.25 0.1 +0.2 acc. to DIN 6784 0.1 MIN. 3 2.1 0.1 4 0.3 +0.1 -0.05 +0.1 0.15 -0.05 +0.1 0.6 -0.05 4x 0.1 0.2 M M A Foot Print 1.6 0.8 0.6 1.15 0.9 Marking Layout Manufacturer Pin 1 Type code BGA420 Example Packing Code E6327: Reel o180 mm = 3.000 Pieces/Reel Code E6433: Reel o330 mm = 10.000 Pieces/Reel 0.2 2.3 8 4 Pin 1 2.15 1.1 Impressum Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen (c) Infineon Technologies AG 2005. All Rights Reserved. Attention please! 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