BF2030WE6433 - Infineon Technologies AG

Sep-29-2004

1

BF2030...

Silicon N-Channel MOSFET Tetrode

• For low noise, high gain controlled

input stages up to 1GHz

• Operating voltage 5V

EHA07461

GND

G1

G2 Drain

AGC

HF

Input

HF Output

+DC

GG

V

G1

R

ESD: Electrostatic discharge sensitive device, observe handling precaution!

Class 2 (2000V - 4000V) pin to pin Human Body Model

Type Package Pin Configuration Marking

BF2030

BF2030R

BF2030W

SOT143

SOT143R

SOT343

1= S

1= D

2=D

2=S

3=G2

3=G1

4=G1

4=G2

-

NDs

Maximum Ratings

Parameter Symbol Value Unit

Drain-source voltage VDS 8 V

Continuous drain current ID40 mA

Gate 1/ gate 2-source current ±IG1/2SM 10

Gate 1 (external biasing) +VG1SE 6 V

Total power dissipation

TS ≤ 76 °C, BF2030, BF2030R

TS ≤ 94 °C, BF2030W

Ptot

200

mW

Storage temperature Tstg -55 ... 150 °C

Channel temperature Tch 150

Sep-29-2004

2

BF2030...

Thermal Resistance

Parameter Symbol Value Unit

Channel - soldering point1)

BF2030/ BF2030R

BF2030W

Rthchs

≤370

≤280

K/W

Electrical Characteristics

Parameter Symbol Values Unit

min. typ. max.

DC Characteristics

Drain-source breakdown voltage

ID = 20 µA, VG1S = 0 , VG2S = 0 V(BR)DS 10 - - V

Gate1-source breakdown voltage

+IG1S = 10 mA, VG2S = 0 , VDS = 0 +V(BR)G1SS 6 - 15

Gate2-source breakdown voltage

+IG2S = 10 mA, VG1S = 0 , VDS = 0 +V(BR)G2SS 6 - 15

Gate1-source leakage current

VG1S = 5 V, VG2S = 0 , VDS = 0 +IG1SS - - 50 nA

Gate2-source leakage current

VG2S = 5 V, VG1S = 0 , VDS = 0 +IG2SS - - 50

Drain current

VDS = 5 V, VG1S = 0 , VG2S = 4 V IDSS - - 50 µA

Drain-source current

VDS = 5 V, VG2S = 4 V, RG1 = 100 kΩIDSX - 12 - mA

Gate1-source pinch-off voltage

VDS = 5 V, VG2S = 4 V, ID = 20 µA VG1S(p) 0.3 0.5 - V

Gate2-source pinch-off voltage

VDS = 5 V, ID = 20 µA VG2S(p) 0.3 0.6 -

1For calculation of RthJA please refer to Application Note Thermal Resistance

Sep-29-2004

3

BF2030...

Electrical Characteristics

Parameter Symbol Values Unit

min. typ. max.

AC Characteristics (verified by random sampling)

Forward transconductance

VDS = 5 V, ID = 10 mA, VG2S = 4 V gfs 27 31 - mS

Gate1 input capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 1 MHz

Cg1ss - 2.4 2.8 pF

Output capacitance

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 1 MHz

Cdss - 1.3 -

Power gain

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

Gp20 23 - dB

Noise figure

VDS = 5 V, ID = 10 mA, VG2S = 4 V,

f = 800 MHz

F- 1.5 2.2 dB

Gain control range

VDS = 5 V, VG2S = 4...0 V, f = 800 MHz ∆Gp40 50 -

Sep-29-2004

4

BF2030...

Total power dissipation Ptot = ƒ(TS)

BF2030, BF2030R

0 15 30 45 60 75 90 105 120 °C 150

TS

0

20

40

60

80

100

120

140

160

180

mW

220

Ptot

Total power dissipation Ptot = ƒ(TS)

BF2030W

0 15 30 45 60 75 90 105 120 °C 150

TS

0

20

40

60

80

100

120

140

160

180

mA

220

Ptot

Drain current ID = ƒ(IG1)

VG2S = 4V

0 10 20 30 40 50 60 70 80 µA 100

IG1

0

2

4

6

8

10

12

14

16

18

20

22

24

mA

28

ID

Output characteristics ID = ƒ(VDS)

VG2S = 4V

VG1S = Parameter

0 1 2 3 4 5 6 7 8 V10

VDS

0

2

4

6

8

10

12

14

16

mA

20

ID

1.4V

1.3V

1.2V

1.1V

1V

0.8V

Sep-29-2004

5

BF2030...

Gate 1 current IG1 = ƒ(VG1S)

VDS = 5V

VG2S = Parameter

0 0.4 0.8 1.2 1.6 2 2.4 V3

VDS

0

15

30

45

60

75

90

105

120

135

150

165

180

µA

210

IG1

4V

3.5V

3V

2.5V

2V

Gate 1 forward transconductance

gfs = ƒ(ID)

VDS = 5V, VG2S = Parameter

0 4 8 12 16 20 24 mA 30

ID

0

5

10

15

20

25

30

mS

40

gfs

4V

3V

2.5V

2V

Drain current ID = ƒ(VG1S)

VDS = 5V

VG2S = Parameter

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 V2

VG1S

0

2

4

6

8

10

12

14

16

18

20

22

24

mA

30

ID

4V

3V

2V

1.5V

Drain current ID = ƒ(VGG)

VDS = 5V, VG2S = 4V, RG1 = 100kΩ

(connected to VGG, VGG=gate1 supply voltage)

0 0.5 1 1.5 2 2.5 3 3.5 4 V5

VGG

0

1

2

3

4

5

6

7

8

9

10

11

mA

13

ID

Sep-29-2004

6

BF2030...

Drain current ID = ƒ(VGG)

VG2S = 4V

RG1 = Parameter in kΩ

0123456V8

VGG=VDS

0

2

4

6

8

10

12

14

16

18

20

22

24

mA

28

ID

70

80

100

120

Crossmodulation Vunw = (AGC)

VDS = 5 V

0 10 20 30 40 dB 55

AGC

80

85

90

95

100

105

110

dBµV

120

Vunw

Cossmodulation test circuit

4n7

VGG

VAGC VDS

4n7

2.2 µH

R1

10 kOhm

RL

50 Ohm

RGEN

50 Ohm 50 Ohm RG1

4n7

Package SOT143

2.6 MAX.

1.7

0.25 MB

0.8 -0.05

+0.1

A

1.9

B±0.1

2.9

DIN 6784

+0.2

acc. to

+0.1

-0.05

0.4

0.08...0.15

30

˚

...2

˚

0.20 MA

-0.1

0.1 MAX.

MAX.

0.55

1.1 MAX.

1.3

±0.1

10

˚

MAX.10

˚

12

43

1.1

0.8 0.81.2

0.90.9

0.80.81.2

Manufacturer

Date code (Year/Month)

Type code

2003, July

BFP181

Example

Pin 1

2.6

4

3.15

Pin 1

8

0.2

1.15

Package Outline

Foot Print

Marking Layout

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel

Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

Package SOT143R

1.9

1.7

0.4

-0.05

+0.1

-0.05

0.8

B

A

0.25

M

B

2.9

±0.1

acc. to

+0.2

DIN 6784

1.1 MAX.

2

˚

... 30

˚

2.6 MAX.

10

˚

10

˚

0.1 MAX.

1.3

±0.1

0.08...0.15

A

M

0.20

0.25

+0.1

MAX.

12

43

1.1

0.8 0.81.2

0.90.9

0.8 0.8 1.2

Reverse bar

Date code (Year/Month)

Type code

2003, July

BFP181R

Manufacturer

Example

Pin 1

2.6

4

3.15

Pin 1

8

0.2

1.15

Package Outline

Foot Print

Marking Layout

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel

Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

Package SOT343

1.25

±0.1

0.1 MAX.

2.1

±0.1

0.15

+0.1

-0.05

0.3

+0.1

2

±0.2 ±0.1

0.9

12

34 A

+0.1

0.6

acc. to

+0.2

DIN 6784

A

M

0.2

1.3

-0.05

0.15

0.1

M

4x

0.1

0.1 MIN.

0.6

0.8

1.6

1.15

0.9

Manufacturer

Type code BGA420

Example

Pin 1

0.2

4

2.15

8

2.3

1.1

Pin 1

Package Outline

Foot Print

Marking Layout

Packing

Code E6327: Reel ø180 mm = 3.000 Pieces/Reel

Code E6433: Reel ø330 mm = 10.000 Pieces/Reel

Impressum

Published by Infineon Technologies AG,

St.-Martin-Strasse 53,

81669 München

Attention please!

The information herein is given to describe certain components and shall not be

considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of

non-infringement, regarding circuits, descriptions and charts stated herein.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.Infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest Infineon

Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that life-support

device or system, or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body, or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be endangered.