ZXMP4A16G Green Product Summary ID TA = +25C 60m @ VGS = -10V -6.4A 100m @ VGS = -4.5V -5.0A Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications Low Input Capacitance Low On-Resistance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data DC-DC Converters Power Management Functions Backlighting Case: SOT223 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.112 grams (Approximate) D SOT223 G S Top View Pin Out - Top View Equivalent Circuit Ordering Information (Note 4) Part Number ZXMP4A16GTA ZXMP4A16GTC Notes: Marking ZXMP4A16 ZXMP4A16 Reel size (inches) 7 13 Tape width (mm) 12 12 Quantity per reel 1,000 4,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT223 ZXMP 4A16 ZXMP4A16G Document number: DS33584 Rev.5 - 2 YWW ADVANCE INFORMATION ADVANCED INFORMATION -40V Features and Benefits RDS(on) max BVDSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET ZXMP4A16 = Product Type Marking Code YWW = Date Code Marking Y or Y = Last Digit of Year (ex: 5= 2015) WW or WW = Week Code (01~53) 1 of 7 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP4A16G Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol ADVANCE INFORMATION ADVANCED INFORMATION Drain-Source Voltage Value -40 Units V VGSS 20 V ID -6.4 -5.1 -4.6 A -5.2 -21 A A -21 A VDSS Gate-Source Voltage Steady State Continuous Drain Current, VGS = -10V TA = +25C (Note 6) TA = +70C (Note 6) TA = +25C (Note 5) Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (Note 7) IS IDM ISM Pulsed Source Current (Note 7) Thermal Characteristics (@TA = +25C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation Linear Derating Factor TA = +25C (Note 5) PD Total Power Dissipation Linear Derating Factor TA = +25C (Note 6) PD Thermal Resistance, Junction to Ambient Steady state (Note 5) Steady state (Note 6) RJA Operating and Storage Temperature Range Electrical Characteristics TJ, TSTG Value Units 2.0 16 3.9 31 62.5 32 -55 to +150 W mW/C W mW/C C/W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS -40 -1.0 VGS = 0V, ID = -250A IDSS V Zero Gate Voltage Drain Current A VDS = -40V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage IGSS 100 nA VGS = 20V, VDS = 0V VGS(th) -1.0 VDS = VGS, ID = -250A 60 100 V -1.2 V S Static Drain-Source On-Resistance (Note 8) Diode Forward Voltage (Note 8) Forward Transconductance (Notes 8 & 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance RDS(ON) VSD gfs -0.85 8.85 Ciss 1,007 Output Capacitance Coss 130 Reverse Transfer Capacitance Crss Total Gate Charge (VGS = -5.0V) Qg Total Gate Charge (VGS = -10V) Gate-Source Charge Qg Gate-Drain Charge Qgs Qgd Turn-On Delay Time 85 13.6 m nC VDS = -20V, ID = -3.8A, nS VGS = -10V, VDD = -20V, RG = 6.0, ID= -1.0A 4.8 tD(on) 2.33 Turn-On Rise Time tr 8.84 Turn-Off Delay Time Turn-Off Fall Time tD(off) tf 29.18 12.54 trr Qrr 27.2 nS 25.4 nC Notes: VGS = 0V, IS = -3.4A VDS = -15V, ID = -3.8A VDS = -20V, VGS = 0V f = 1.0MHz Body Diode Reverse Recovery Charge VGS = -4.5V, ID = -2.9A pF 26.1 2.8 Body Diode Reverse Recovery Time VGS = -10V, ID = -3.8A IF = -3A, dI/dt = 100A/s 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For a device surface mounted on FR4 PCB measured at t 10 secs. 7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width limited by maximum junction temperature. 8. Measured under pulsed conditions. Width300s. Duty cycle 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. ZXMP4A16G Document number: DS33584 Rev.5 - 2 2 of 7 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP4A16G ADVANCE INFORMATION ADVANCED INFORMATION Typical Characteristics ZXMP4A16G Document number: DS33584 Rev.5 - 2 3 of 7 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP4A16G ADVANCE INFORMATION ADVANCED INFORMATION Typical Characteristics (continued) ZXMP4A16G Document number: DS33584 Rev.5 - 2 4 of 7 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP4A16G ADVANCE INFORMATION ADVANCED INFORMATION Typical Characteristics (continued) ZXMP4A16G Document number: DS33584 Rev.5 - 2 5 of 7 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP4A16G Package Outline Dimensions D Q b1 C E E1 Gauge Plane 0.25 Seating Plane e1 L b 0 -1 0 e A A1 SOT223 Dim Min Max Typ A 1.55 1.65 1.60 A1 0.010 0.15 0.05 b 0.60 0.80 0.70 b1 2.90 3.10 3.00 C 0.20 0.30 0.25 D 6.45 6.55 6.50 E 3.45 3.55 3.50 E1 6.90 7.10 7.00 e 4.60 e1 2.30 L 0.85 1.05 0.95 Q 0.84 0.94 0.89 All Dimensions in mm 7 7 ADVANCE INFORMATION ADVANCED INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 C1 Dimensions Value (in mm) C 2.30 C1 6.40 X 1.20 X1 3.30 Y 1.60 Y1 1.60 Y2 8.00 Y2 Y X ZXMP4A16G Document number: DS33584 Rev.5 - 2 C 6 of 7 www.diodes.com February 2015 (c) Diodes Incorporated ZXMP4A16G ADVANCE INFORMATION ADVANCED INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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