ZXMP4A16G
Document number: DS33584 Rev.5 - 2
1 of 7
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February 2015
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ZXMP4A16G
ADVANCE INFO R MA T I O N
ADVANCED I NF ORMATION
40V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS
ID
TA = +25°C
-40V
-6.4A
-5.0A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Backlighting
Features and Benefits
Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
Weight: 0.112 grams (Approximate)
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMP4A16GTA
ZXMP4A16
7
12
1,000
ZXMP4A16GTC
ZXMP4A16
13
12
4,000
Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Equivalent Circuit
Green
e3
Top View
SOT223
Pin Out - Top
View
ZXMP4A16 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
SOT223
D
S
G
4A16
YWW
ZXMP
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
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February 2015
© Diodes Incorporated
ZXMP4A16G
ADVANCE INFO R MA T I O N
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
-40
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current, VGS = -10V
Steady
State
TA = +25°C (Note 6)
TA = +70°C (Note 6)
TA = +25°C (Note 5)
ID
-6.4
-5.1
-4.6
A
Maximum Body Diode Forward Current (Note 6)
IS
-5.2
A
Pulsed Drain Current (Note 7)
IDM
-21
A
Pulsed Source Current (Note 7)
ISM
-21
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation
Linear Derating Factor
TA = +25°C (Note 5)
PD
2.0
16
W
mW/°C
Total Power Dissipation
Linear Derating Factor
TA = +25°C (Note 6)
PD
3.9
31
W
mW/°C
Thermal Resistance, Junction to Ambient
Steady state (Note 5)
RθJA
62.5
°C/W
Steady state (Note 6)
32
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
BVDSS
-40
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS


-1.0
µA
VDS = -40V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
VGS(th)
-1.0
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance (Note 8)
RDS(ON)
60
mΩ
VGS = -10V, ID = -3.8A
100
VGS = -4.5V, ID = -2.9A
Diode Forward Voltage (Note 8)
VSD
-0.85
-1.2
V
VGS = 0V, IS = -3.4A
Forward Transconductance (Notes 8 & 10)
gfs

8.85
S
VDS = -15V, ID = -3.8A
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
Ciss
1,007
pF
VDS = -20V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
130
Reverse Transfer Capacitance
Crss
85
Total Gate Charge (VGS = -5.0V)
Qg
13.6
nC
VDS = -20V, ID = -3.8A,
Total Gate Charge (VGS = -10V)
Qg

26.1

Gate-Source Charge
Qgs
2.8
Gate-Drain Charge
Qgd
4.8
Turn-On Delay Time
tD(on)
2.33
nS
VGS = -10V, VDD = -20V, RG = 6.0Ω,
ID= -1.0A
Turn-On Rise Time
tr
8.84
Turn-Off Delay Time
tD(off)
29.18
Turn-Off Fall Time
tf

12.54

Body Diode Reverse Recovery Time
trr

27.2

nS
IF = -3A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr

25.4

nC
Notes: 5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR4 PCB measured at t 10 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width limited by maximum junction temperature.
8. Measured under pulsed conditions. Width≤300μs. Duty cycle ≤ 2%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
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ZXMP4A16G
ADVANCE INFO R MA T I O N
ADVANCED I NF ORMATION
Typical Characteristics
ZXMP4A16G
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ZXMP4A16G
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Typical Characteristics (continued)
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
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ZXMP4A16G
ADVANCE INFO R MA T I O N
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Typical Characteristics (continued)
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT223
Dim
Min
Max
Typ
A
1.55
1.65
1.60
A1
0.010
0.15
0.05
b
0.60
0.80
0.70
b1
2.90
3.10
3.00
C
0.20
0.30
0.25
D
6.45
6.55
6.50
E
3.45
3.55
3.50
E1
6.90
7.10
7.00
e
-
-
4.60
e1
-
-
2.30
L
0.85
1.05
0.95
Q
0.84
0.94
0.89
All Dimensions in mm
Dimensions
Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
A1
A
7°
7°
D
b
e
e1
b1
C
E1
L
0°-10°
Q
E
0.25
Seating
Plane
Gauge
Plane
X1
Y1
Y
XC
C1 Y2
ZXMP4A16G
Document number: DS33584 Rev.5 - 2
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ZXMP4A16G
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