1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1] ACPR400 and ACPR600 at 30 kHz resolution bandwidth.
1.2 Features
nTypical GSM EDGE performance at frequencies of 1990 MHz, a supply voltage of 28 V
and an IDq of 900 mA:
uAverage output power = 60 W
uPower gain = 14.8 dB
uEfficiency = 36 %
uACPR400 =−62 dBc
uACPR600 =−73 dBc
uEVMrms = 2.1 %
nEasy power control
nExcellent ruggedness
nHigh efficiency
nExcellent thermal stability
nDesigned for broadband operation (1800 MHz to 2000 MHz)
nInternally matched for ease of use
BLF4G20LS-130
UHF power LDMOS transistor
Rev. 01 — 1 June 2007 Product data sheet
Table 1. Typical performance
T
case
= 25
°
C; I
Dq
= 900 mA; unless otherwise specified; in a class-AB production test circuit.
Mode of operation f VDS PLPL(AV) GpηDACPR400 ACPR600 EVMrms IMD3
(MHz) (V) (W) (W) (dB) (%) (dBc) (dBc) (%) (dBc)
CW 1930 to 1990 28 130 - 14.5 50 - - - -
GSM EDGE 1930 to 1990 28 - 60 14.8 36 −62[1] −73[1] 2.1 -
2-tone 1930 to 1990 28 - 65 14.6 38.5 - - - −30
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 2 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
1.3 Applications
nRF power amplifiers for GSM, GSM EDGE and CDMA base stations and multi carrier
applications in the 1800 MHz to 2000 MHz frequency range.
2. Pinning information
[1] Connected to flange
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Symbol
1 drain
2 gate
3 source [1] 3
2
1
sym112
1
3
2
Table 3. Ordering information
Type number Package
Name Description Version
BLF4G20LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +15 V
IDdrain current - 15 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 200 °C
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 3 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
7.1 Ruggedness in class-AB operation
The BLF4G20LS-130 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;
IDq = 900 mA; PL = 130 W (CW); f = 1990 MHz.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Max Unit
Rth(j-case) thermal resistance from junction
to case Tcase =80°C;
PL=50W 0.49 0.58 K/W
Table 6. Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D= 2.1 mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 230 mA 2.5 2.9 3.5 V
VGSq gate-source quiescent voltage VDS = 28 V; ID= 900 mA 2.65 3.15 3.65 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 5 µA
IDSX drain cut-off current VGS =V
GS(th) +6 V;
VDS =10V 35 42 - A
IGSS gate leakage current VGS = 15 V; VDS = 0 V - - 420 nA
gfs forward transconductance VDS =10V; I
D= 7.5 A - 11 - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 6 V;
ID= 7.5 A - 0.065 - Ω
Crs feedback capacitance VGS =0V; V
DS =28V;
f= 1MHz -3-pF
Table 7. Application information
Mode of operation: 2-tone (200 kHz tone spacing); f
1
= 1930 MHz; f
2
= 1990 MHz; V
DS
=28V;
I
Dq
= 900 mA; T
case
=25
°
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(PEP) = 130 W 13 14.6 - dB
RLin input return loss PL(PEP) = 130 W - −10 −7dB
ηDdrain efficiency PL(PEP) = 130 W 34.5 38.5 - %
IMD3 third order intermodulation
distortion PL(PEP) = 130 W - −30 −27 dBc
IMD5 fifth order intermodulation distortion PL(PEP) = 130 W - −39.5 −35.5 dBc
IMD7 seventh order intermodulation
distortion PL(PEP) = 130 W - −58.5 −54 dBc
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 4 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
7.2 One-tone CW
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C; f = 1990 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
PL (W)
0 16012040 80
001aag526
12
14
16
Gp
(dB)
10
20
40
60
ηD
(%)
0
Gp
ηD
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 5 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
7.3 Two-tone CW
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz. VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz.
Fig 2. Two-tone CW power gain and drain efficiency
as functions of load power; typical values Fig 3. Intermodulation distortion as a function of
average load power; typical values
VDS = 28 V; Tcase = 25 °C; f = 1990 MHz.
(1) IDq = 800 mA.
(2) IDq = 900 mA.
(3) IDq = 1000 mA.
(4) IDq = 1100 mA.
Fig 4. Third order intermodulation distortion as function of average load power; typical values
PL (W)
0 1008040 6020
001aag527
13
14
12
15
16
Gp
(dB) ηD
(%)
11
20
30
10
40
50
0
Gp
ηD
PL(AV) (W)
0 1008040 6020
001aag528
−40
−60
−20
0
IMD
(dBc)
−80
IMD3
IMD5
IMD7
PL(AV) (W)
0 1008040 6020
001aag529
−40
−60
−20
0
IMD3
(dBc)
−80
(1)
(2)
(3)
(4)
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 6 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
7.4 GSM EDGE
VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz. VDS = 28 V; IDq = 900 mA; Tcase = 25 °C;
f = 1990 MHz.
Fig 5. GSM EDGE power gain and drain efficiency as
functions of load power; typical values Fig 6. GSM EDGE ACPR at 400 kHz and at 600 kHz as
functions of load power; typical values
VDS = 28 V; IDq = 850 mA; Tcase =25°C;
f = 960 MHz. VDS =28V; I
Dq = 850 mA; Tcase =25°C;
f = 960 MHz.
Fig 7. GSM EDGE rms EVM and peak EVM as
functions of load power; typical values Fig 8. GSM EDGE ACPR and rms EVM as functions of
drain efficiency; typical values
PL (W)
0 1008040 6020
001aag530
13
14
12
15
16
Gp
(dB) ηD
(%)
11
20
30
10
40
50
0
Gp
ηD
PL (W)
0 1008040 6020
001aag531
−70
−60
−50
ACPR
(dBc)
−80
ACPR400
ACPR600
PL (W)
0 1008040 6020
001aag532
8
4
12
16
EVM
(%)
0
EVMM
EVMrms
001aag533
ηD (%)
0604020
−66
−62
−70
−58
−54
ACPR
(dBc)
−74
2
3
1
4
5
EVM
(%)
0
EVMrms
ACPR400
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 7 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
8. Test information
[1] American Technical Ceramics type 100B or capacitor of same quality.
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) (εr = 3.5); thickness = 0.76 mm.
See Table 8 for list of components.
Fig 9. Component layout for 1930 MHz to 1990 MHz production test circuit
001aag534
BLF4G20LS-130 input - PCS rev. 1
C3
C1
C2
BLF4G20LS-130
output - PCS rev. 1
C7
C10
C5
C9
W1
VDD
C6
C4
R1
Table 8. List of components (see Figure 9)
Component Description Value Dimensions Remarks
C1, C3, C5, C7 chip capacitor 11 pF [1]
C2, C9 tantalum capacitor 10 µF
C4 chip capacitor 0.8 pF [1]
C6 chip capacitor 0.1 pF [1]
C8 American Technical Ceramics
(ATC) chip capacitor 1µF 1812X7R105KL2AB
C10 Philips electrolytic capacitor 220 µF; 35 V
R1 Philips chip resistor 5.1 Ω0603
W1 hand made wire 5 mm
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 8 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
9. Package outline
Fig 10. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502B
AF
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57 0.15
0.08 20.02
19.61 9.53
9.25 19.94
18.92 9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495 0.006
0.003 0.788
0.772
D1
19.96
19.66
0.786
0.774 0.375
0.364 0.785
0.745 0.390
0.380
0.186
0.135 0.010
0.045
0.035 0.815
0.805
0.210
0.170 0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 9 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
10. Abbreviations
11. Revision history
Table 9. Abbreviations
Acronym Description
ACPR Adjacent Channel Power Ratio
CDMA Code Division Multiple Access
CW Continuous Wave
EDGE Enhanced Data rates for GSM Evolution
EVM Error Vector Magnitude
GSM Global System for Mobile communications
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
RF Radio Frequency
RMS Root Mean Square
VSWR Voltage Standing Wave Ratio
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF4G20LS-130_1 20070601 Product data sheet - -
BLF4G20LS-130_1 © NXP B.V. 2007. All rights reserved.
Product data sheet Rev. 01 — 1 June 2007 10 of 11
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of a NXP Semiconductors product can reasonably be expected to
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BLF4G20LS-130
UHF power LDMOS transistor
© NXP B.V. 2007. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 1 June 2007
Document identifier: BLF4G20LS-130_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation. . . . . . . . . . 3
7.2 One-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Two-tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 GSM EDGE . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . . 9
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13 Contact information. . . . . . . . . . . . . . . . . . . . . 10
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
