Part Number Lead Form Shipping Option
HSDL-4271 Straight Bulk
1.14 ± 0.2
5.8 ± 0.2
5.0 ± 0.2
31.6 min.
0.7 max.
8.7 ± 0.2
2.54
0.50 ± 0.1
CATHODE
FLAT
1.0 min.
HSDL-4271
High-Performance T-1¾ (5mm) AlGaAs Infrared (940nm) Lamp
Datasheet
Description
The HSDL-4271 Infrared emitter was designed
for applications that require high power and
low forward voltage. It utilizes Aluminum
Galium Arsenide (AlGaAs) LED technology and
is optimized for efficiency at emission
wavelengths of 940 nm. The material used
produces high radiant efficiency over a wide
range of currents. The emitter is packaged in
clear T-1¾ (5mm) package.
Features
••
••
•High Power AlGaAs LED Technology
••
••
•940 nm Wavelength
••
••
•T-1¾ Package
••
••
•Low Cost
••
••
•Low Forward Voltage: 1.2V at 20mA
Applications
••
••
•Industrial Infrared Equipments and Applications
(Smoke Detectors etc)
••
••
•Consumer Electronics (Infrared Remote Controller
etc)
••
••
•Infrared spotlight for cameras
••
••
•Discrete Interrupters
••
••
•Infrared source for optical counters and card readers
2
Recommended Operating Conditions
Parameter Symbol Min Max Unit Reference
Operating Temperature TO-40 85 °C
Parameter Symbol Min. Typ. Max. Unit Condition Reference
Forward Voltage VF-1.2
1.4
1.5
1.7
VI
FDC=20mA
IFDC=100mA
Figure 2
Figure 3
Forward Voltage
Temperature Coefficient
∆V/∆T--1.0-mV/°CI
FDC=100mA Figure 4
Series Resistance RS-2-OhmsI
FDC=100mA
Diode Capacitance CO-25-pFV
R=0V,
f=1MHz
Thermal Resistance,
Junction to Ambient
Rθja - 310 - °C/W
Parameter Symbol Min. Typ. Max. Unit Condition Reference
Radiant On-Axis Intensity IE25 50 - mW/Sr ILED=100mA Figure 4
Radiant On-Axis Intensity
Temperature Coefficient
∆IE/∆T-
-
-0.3
-0.5
-%/°CI
LED=100mA
Viewing Angle 2θ1/2 -30- ° Figure 7
Peak Wavelength λpk - 940 - nm Figure 1
Spectral Width ∆λ -50- nmI
LED=20mA Figure 1
Optical Rise and Fall Time tr/tf-1.3- usI
LED=100mA
Absolute Maximum Ratings at 25°°
°°
°C
Parameter Symbol Minimum Maximum Unit Reference
Peak Forward Current IFPK - 350 mA Duty cycle = 20%
period = 200us
Forward Current IFDC -100 mA
Power Dissipation PDISS - 200 mW
Reverse Voltage VR5- VI
R=100uA
Storage Temperature TS-40 100 °C
LED Junction Temperature TJ110 °C
Lead Soldering Temperature 260 for 5 sec °C
Notes:
1. Derate as shown in Figure 6.
Electrical Characteristics at 25°°
°°
°C
Optical Characteristics at 25°°
°°
°C
3
Figure 2. DC Forward Current vs. Forward Voltage
DC Forward Current vs. Forward Voltage at Temp=25˚C
1
10
100
0 0.5 1 1.5
VF - Forward Voltage - (V)
IFDC - DC Forward Current,, - (mA)
Figure 3. Peak Forward Current vs. Forward Voltage
Peak Forward Current vs. Forward Voltage at Ta=25˚C
1
10
100
1000
0.0 0.5 1.0 1.5 2.0
VF - Forward Voltage - (V)
IFPK - Peak Forward Current - (mA)
Radiant Intensity, I
E
vs. Forward Current, I
F
at Ta=25 ˚C
0
20
40
60
20 50 100
I
F
- Forward Current - (mA)
I
E
- Radiant Intensity - (mW/Sr)
Figure 4. Radiant Intensity vs. DC Forward Current
0
0.2
0.4
0.6
0.8
1.0
800 900 1000
Wavelength (nm)
Relative Radiant Intensity
Figure 5. Forward Voltage vs. Ambient Temperature
Average VF versus Temperature
1.0
1.1
1.2
1.3
1.4
1.5
1.6
-40 -25 0 25 50 70 85 100
Temperature - (˚C)
VF - Average - (Volts)
If=20mA
If=100mA
Maximum allowable DC current vs. ambient temperature
RJA=300˚C/
0
10
20
30
40
50
60
70
80
90
100
110
0 20 40 60 80 100
TA - Ambient Temperature - (˚C)
IDC MAX - Maximum
DC Current - (mA)
Figure 6: DC Forward Current vs. Ambient Temperature Derated
Based on TJMAX=110°°
°°
°C
Figure 1. Relative Radiant Intensity vs. Wavelength
Figure 7. Radiant Intensity vs. Angular Displacement
Radiation Profile
0
0.2
0.4
0.6
0.8
1.0
1.2
-100 -50 0 50 100
Angle (˚)
Relative Rad Power
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
5989-4470EN - January3, 2006
