FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
2 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC156A
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 0.7 - 2.4 GHz INPUT
v00.0111
General Description
Features
Functional Diagram
Conversion Loss: 15 dB
Fo, 3Fo, 4Fo Isolation: 38 dB
Input Drive Level: 10 to 20 dBm
Electrical Specications, TA = +25° C, As a Function of Drive Level
Typical Applications
The HMC156A is suitable for:
• Wireless Local Loop
• LMDS, VSAT, and Point-to-Point Radios
• UNII & HiperLAN
• Test Equipment
The HMC156A is a miniature frequency doubler in
a MMIC die. Suppression of undesired fundamental
and higher order harmonics is 38 dB typical with
respect to input signal levels. The doubler uses the
same diode/balun technology used in Hittite MMIC
mixers, features small size and requires no DC bias.
Input = +10 dBm Input = +15 dBm Input = +20 dBm
Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units
Frequency Range, Input 1.1 - 2.1 0.8 - 2.4 0.7 - 2.3 GHz
Frequency Range, Output 2.2 - 4.2 1.6 - 4.8 1.4 - 4.6 GHz
Conversion Loss 17 22 15 20 15 20 dB
FO Isolation
(with respect to input level) 42 47 43 47 27 35 dB
3FO Isolation
(with respect to input level) 45 55 44 55 29 40 dB
4FO Isolation
(with respect to input level) 28 38 31 38 25 35 dB
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
2 - 2
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Conversion Gain vs. Drive Level Isolation @ +15 dBm Drive Level*
Input Return Loss vs. Drive Level Output Return Loss @ +15 Drive Level
*With respect to input level
-40
-30
-20
-10
0
1 1.5 2 2.5 3 3.5 4 4.5 5
Pin = 10 dBm
Pin = 15 dBm
Pin = 20 dBm
CONVERSION GAIN (dB)
OUTPUT FREQUENCY (GHz)
-16
-12
-8
-4
0
0 1 2 3 4 5
RETURN LOSS (dB)
OUTPUT FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 0.5 1 1.5 2 2.5 3 3.5 4
Pin =10 dBm
Pin =15 dBm
Pin = 20 dBm
RETURN LOSS (dB)
INPUT FREQUENCY (GHz)
-100
-80
-60
-40
-20
0
0 2 4 6 8 10
Fo
3Fo
4Fo
ISOLATION (dB)
FREQUENCY (GHz)
HMC156A
v00.0111
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 0.7 - 2.4 GHz INPUT
Absolute Maximum Ratings
Input Drive +27 dBm
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
2 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Outline Drawing
NOTES:
1. ALL UNLABELED PADS MUST BE BONDED TO GROUND (8 TOTAL).
2. ALL DIMENSIONS IN INCHES [MILLIMETERS]
3. ALL TOLERANCES ARE ±0.001 [0.025]
4. DIE THICKNESS IS ±0.005 [0.127]
5. BOND PADS ARE ±0.004 [0.100] SQUARE
6. EQUALLY SPACED AT ±0.006 [0.150] CENTERS
7. BACKSIDE METALLIZATION: NONE
8. BOND PAD METALLIZATION: GOLD
Die Packaging Information [1]
Standard Alternate
WP-13 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC156A
v00.0111
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 0.7 - 2.4 GHz INPUT
Pad Number Function Description Interface Schematic
1 RFIN DC coupled and matched to 50 Ohm.
2 RFOUT DC coupled and matched to 50 Ohm.
Die Bottom GND Die bottom must be connected to RF/DC ground.
Pad Description
FREQUENCY MULTIPLIERS - PASSIVE - CHIP
2
2 - 4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC156A
v00.0111
GaAs MMIC PASSIVE FREQUENCY
DOUBLER, 0.7 - 2.4 GHz INPUT
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD
protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning
systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias
cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive
epoxy. The mounting surface should be clean and at.
Epoxy Die Attach:
Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy llet is observed around the
perimeter of the chip once it is placed into position.
Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 1.0 diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use
the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and
terminated on the package. RF bonds should be as short as possible.
