SCHOTTKY DIODES
FEATURES
*
*High current rectifier Schottky diode
Low voltage,low inductance
*For power supply
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.004 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25OC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RB751V-40
SOD-323
MAXIMUM RATINGS (@TA=25OC unless otherwise noted)
RATINGS
Maximum DC reverse voltage
Maximum Peak reverse voltage
Maximum Peak Forward Surge Current
Mean rectifying current
Operating and Storage Temperature Range
SYMBOL RB751V-40
VR
VRM
IFSM
IO
TJ,TSTG
Volts
Volts
Amps
Amps
0.2
0.03
-40 ~ + 125 OC
UNITS
30
40
Dimensions in inches and (millimeters)
REF .019(0.46)
.014(.35)
.010(.25)
.106(2.70)
.098(2.50)
.055(1.40)
.047(1.20)
.071(1.80)
.063(1.60)
.006(.15)
.003(.08)
MAX.039(1.00)
.004(.10)
.000(.00)
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
Reverse voltage leakage current
Forward voltage (IF=1mA)
Diode Capacitance
CHARACTERISTICS SYMBOL UNITS
0.5
0.37
-
-
uA
V
pF
IR
VF
CT
MAX.
-
2
TYP.
-
-
-
MIN.
(VR=1V,f=1MHz)
(VR=30V)
VC 2006-3
RATING AND CHARACTERISTICS CURVES ( RB751V-40 )
Figure2 Reverse Characteristics
VR.REVERSE VOLTAGE(V)
Figure1 Forward characteristics
VF.FORWARD VOLTAGE (V)
Figure3 Capacitance between terminals characteristics
VR.REVERSE VOLTAGE (V)
IF.FORWARD CURRENT(A)
CT.CAPACITANCE BETWEEN TERMINALS(pF)
IR.REVERSE CURRENT(A)
1u
10u
100u
1m
10m
00.2 0.4 0.6 0.8 1.0 1.2 1.4
100m
1000m
100n
1u
10u
100u
10n
1n
02520 30 35
510 15
10
5
20
50
100
2
104 6 8 10 12 142
Typ.ī˜ƒ
pulse measurement
Ta=75
O
C
Ta=125
O
C
Ta=75
O
C
Ta=25
O
C
Ta=-25
O
C
Ta=25
O
C
Ta=125OC
Ta=-25
O
C
Ta=25
O
Cī˜ƒ
f=1MHz
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