Freescale Semiconductor Technical Data Document Number: MWIC930N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MWIC930N wideband integrated circuit is designed for CDMA and GSM/GSM EDGE applications. It uses Freescale's newest High Voltage (26 to 28 Volts) LDMOS IC technology and integrates a multi - stage structure. Its wideband On - Chip integral matching circuitry makes it usable from 790 to 1000 MHz. The linearity performances cover all modulations for cellular applications: GSM, GSM EDGE, TDMA, N - CDMA and W - CDMA. Final Application * Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921 - 960 MHz) Power Gain -- 30 dB Power Added Efficiency -- 45% Driver Application * Typical Single - Carrier N - CDMA Performance: VDD = 27 Volts, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band (865 - 894 MHz), IS - 95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 31 dB Power Added Efficiency -- 21% ACPR @ 750 kHz Offset -- - 52 dBc in 30 kHz Bandwidth * Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output Power Features * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output) * Integrated Quiescent Current Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. VRD2 VRG2 VDS1 RFin VDS2/RFout VRD1 VRG1 VGS1 Quiescent Current Temperature Compensation VGS2 Figure 1. Functional Block Diagram MWIC930NR1 MWIC930GNR1 746 - 960 MHz, 30 W, 26 - 28 V SINGLE N - CDMA, GSM/GSM EDGE RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MWIC930NR1 CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MWIC930GNR1 GND VRD2 VRG2 VDS1 VRD1 1 2 3 4 5 16 15 GND NC RFin 6 14 RFout/ VDS2 VRG1 VGS1 VGS2 NC GND 7 8 9 10 11 13 12 NC GND (Top View) Note: Exposed backside flag is source terminal for transistors. Figure 2. Pin Connections 1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987. (c) Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor MWIC930NR1 MWIC930GNR1 1 Table 1. Maximum Ratings Symbol Value Unit Drain - Source Voltage Rating VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 0.5, +15 Vdc Storage Temperature Range Tstg - 65 to +175 C Operating Junction Temperature TJ 200 C Symbol Value (1,2) Unit Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case RJC C/W GSM Application (Pout = 30 W CW) Stage 1, 26 Vdc, IDQ = 90 mA Stage 2, 26 Vdc, IDQ = 240 mA 5.9 1.4 GSM EDGE Application (Pout = 15 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 6.5 1.7 CDMA Application (Pout = 5 W CW) Stage 1, 27 Vdc, IDQ = 90 mA Stage 2, 27 Vdc, IDQ = 240 mA 6.5 1.8 Table 3. ESD Protection Characteristics Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C2 (Minimum) Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit 3 260 C Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Table 5. Electrical Characteristics (TC = 25C, unless otherwise noted) Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. N - CDMA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ 750 MHz Offset. PAR = 9.8 dB @ 0.01% Probability on CCDF Power Gain Gps 28 Power Added Efficiency PAE Input Return Loss (f = 880 MHz) IRL ACPR Adjacent Channel Power Ratio 31 -- dB 18 21 -- % -- - 12 -9 dB -- - 52 - 48 dBc Typical Performances (In Freescale Test Fixture) VDD = 26 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 840 MHz<Frequency<920 MHz Quiescent Current Accuracy over Temperature (2) Stage 1 with 33.2 k Gate Feed Resistors ( - 30 to 115C) Stage 2 with 47.5 k Gate Feed Resistors ( - 30 to 115C) -- I1QT I2QT -- % 2.5 2.5 Gain Flatness in 80 MHz Bandwidth @ Pout = 5 W CW GF -- 0.3 -- dB Deviation from Linear Phase in 80 MHz Bandwidth @ Pout = 5 W CW -- 0.6 -- Delay -- 3 -- ns -- 15 -- Delay @ Pout = 5 W CW Including Output Matching Part - to - Part Phase Variation @ Pout = 5 W CW 1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued) MWIC930NR1 MWIC930GNR1 2 RF Device Data Freescale Semiconductor Table 5. Electrical Characteristics (TC = 25C, unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical GSM/GSM EDGE Performances (In Freescale GSM/GSM EDGE Test Fixture, 50 hm system) VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, 921 MHz<Frequency<960 MHz Output Power, 1dB Compression Point P1dB -- 30 -- W Power Gain @ Pout = 30 W CW Gps -- 30 -- dB Power Added Efficiency @ Pout = 30 W CW PAE -- 45 -- % Input Return Loss @ Pout = 30 W CW IRL -- - 12 -- dB Intermodulation Distortion (15 W, 2 - Tone, 100 kHz Tone Spacing) IMD -- - 30 -- dBc Intermodulation Distortion (1 W, 2 - Tone, 100 kHz Tone Spacing) IMD backoff -- - 45 -- dBc Gain Flatness in 40 MHz Bandwidth @ Pout = 30 W CW GF -- 0.3 -- dB Deviation from Linear Phase in 40 MHz Bandwidth @ Pout = 30 W CW -- 0.6 -- MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 3 Z8 VD1 C15 RF INPUT C12 C9 Z1 1 2 3 4 5 VD2 16 C6 C5 NC 15 Z7 Z2 Z3 Z4 Z5 C3 14 6 VG1 R1 C13 R3 C10 C7 R2 C14 R4 C11 C8 C1 C2 7 8 9 Z9 NC 13 Quiescent Current 10 NC Temperature Compensation 11 12 C4 VG2 Z1 Z2 Z3 Z4 Z5 Z6 RF OUTPUT Z10 0.0438 x 0.970 50 Microstrip (not including lead pad) 0.234 x 0.1183 Microstrip (including lead pad) 0.1575 x 0.9379 Microstrip 0.08425 x 0.0729 Microstrip 0.08425 x 0.5111 Microstrip Z6 Z7 Z8 Z9 Z10 PCB 0.0438 x 0.2009 Microstrip 0.5274 x 0.0504 Microstrip 0.0504 x 0.250 Microstrip 0.880 x 0.0254 Microstrip 0.0254 x 0.250 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 3. MWIC930NR1(GNR1) Test Fixture Schematic Table 6. MWIC930NR1(GNR1) Test Fixture Component Designations and Values Part Description Part Number Manufacturer *C1 15 pF High Q Capacitor ATC600S150JW ATC *C2 6.8 pF High Q Capacitor - GSM Fixture 8.2 pF High Q Capacitor - CDMA Fixture ATC600S6R8CW ATC600S8R2CW ATC *C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC *C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC C6, C13, C14, C15 1 F Chip Capacitors GRM42 - 2X7R105K050AL Murata C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet R1, R2 1 kW, 1/8 W Chip Resistors RM73B2AT102J KOA Speer R3, R4 1 MW, 1/4 W Chip Resistors RM73B2BT105J KOA Speer * For output matching and bypass purposes, it is strongly recommended to use these exact capacitors. MWIC930NR1 MWIC930GNR1 4 RF Device Data Freescale Semiconductor VD1 C15 MWIC930 Rev 0 VD2 C6 C5 C12 RF Input C3 C9 C1 C7 R3 RF Output C2 C8 C10 C11 C13 C4 R1 VG1 R4 C14 R2 VG2 Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 4. MWIC930NR1(GNR1) Test Circuit Component Layout MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 5 -20 34 VDD = 27 Vdc Pout = 15 W (Avg.) IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz Two-Tone PEP = 30 W -25 -30 -35 3rd Order -40 5th Order -45 -50 7th Order 31 30 85_C 29 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 27 1 100 10 0 5 10 15 20 25 30 35 TONE SPACING (MHz) Pout, OUTPUT POWER (WATTS) Figure 5. Intermodulation Distortion Products versus Output Power Figure 6. Power Gain versus Output Power 32 40 40 38 G ps , POWER GAIN (dB) Pin = 0 dBm 30 28 3 dBm 26 9 dBm 6 dBm 24 12 dBm 15 dBm 20 10 5 15 20 25 30 TC = -30_C 32 25_C 30 85_C 28 26 VDD = 27 Vdc Pout = 30 W (CW) IDQ1 = 90 mA IDQ2 = 240 mA 20 700 35 750 800 850 900 1000 950 VDD, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 7. Power Gain versus Supply Voltage Figure 8. Power Gain versus Frequency VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz TC = 85_C -20 -22 25_C -24 -30_C -26 -28 0 34 22 -16 -18 36 24 IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 22 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) G ps , POWER GAIN (dB) 25_C 32 28 -55 0.1 IRL, INPUT RETURN LOSS (dB) TC = -30_C 33 G ps , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 5 10 15 20 25 30 35 40 -40 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 9-Channel IS-95 CDMA -42 -44 -46 -48 TC = 85_C 25_C -50 -30_C -52 -54 -56 -58 -60 0 1 2 3 4 5 6 7 8 9 Pout, OUTPUT POWER (WATTS) Pout, OUTPUT POWER (WATTS) Figure 9. Input Return Loss versus Output Power Figure 10. Adjacent Channel Power Ratio versus Output Power 10 MWIC930NR1 MWIC930GNR1 6 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 58 TC = -30_C 50 25_C 85_C 45 40 35 30 25 VDD = 27 Vdc IDQ1 = 90 mA IDQ2 = 240 mA f = 880 MHz 20 15 10 0 5 10 15 20 25 30 35 PAE, POWER ADDED EFFICIENCY (%) PAE, POWER ADDED EFFICIENCY (%) 55 TC = -30_C 56 25_C 54 85_C 52 50 48 46 VDD = 27 Vdc Pout = 30 W (CW) IDQ1 = 90 mA IDQ2 = 240 mA 44 42 40 40 700 750 800 850 900 950 Pout, OUTPUT POWER (WATTS) f, FREQUENCY (MHz) Figure 11. Power Added Efficiency versus Output Power Figure 12. Power Added Efficiency versus Frequency 1000 MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 7 Zo = 50 Zload f = 960 MHz f = 740 MHz 1 f = 740 MHz Zin f = 960 MHz VDD = 27 Vdc, IDQ1 = 90 mA, IDQ2 = 240 mA, Pout = 5 W Avg. f MHz Zin Zload 740 26.61 - j3.68 4.28 + j2.99 760 26.88 - j0.53 4.37 + j2.91 780 28.22 + j2.21 4.39 + j2.79 800 30.57 + j4.31 4.34 + j2.64 820 33.79 + j5.53 4.21 + j2.54 840 37.83 + j5.30 4.06 + j2.52 860 41.92 + j3.42 3.90 + j2.58 880 45.58 - j0.40 3.73 + j2.70 900 47.77 - j5.84 3.59 + j2.93 920 47.83 - j12.15 3.43 + j3.17 940 45.55 - j18.05 3.28 + j3.44 960 41.58 - j22.64 3.13 + j3.75 Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 13. Series Equivalent Input and Load Impedance MWIC930NR1 MWIC930GNR1 8 RF Device Data Freescale Semiconductor DRIVER/PRE- DRIVER PERFORMANCE Z8 VD1 C15 RF INPUT C12 C9 Z1 1 2 3 4 5 VD2 16 C6 C5 NC 15 Z7 Z2 Z3 Z4 Z5 C3 14 6 VG1 R1 C13 R3 C10 C7 R2 C14 R4 C11 C8 C1 C2 7 8 9 Z9 NC 13 Quiescent Current 10 NC Temperature Compensation 11 12 C4 VG2 Z1 Z2 Z3 Z4 Z5 Z6 RF OUTPUT Z10 0.0438 x 0.970 50 Microstrip (not including lead pad) 0.234 x 0.1183 Microstrip (including lead pad) 0.1575 x 0.9379 Microstrip 0.08425 x 0.0729 Microstrip 0.08425 x 0.5111 Microstrip Z6 Z7 Z8 Z9 Z10 PCB 0.0438 x 0.2009 Microstrip 0.5274 x 0.0504 Microstrip 0.0504 x 0.250 Microstrip 0.880 x 0.0254 Microstrip 0.0254 x 0.250 Microstrip Rogers 4350, 0.020, r = 3.50 Figure 14. MWIC930NR1(GNR1) Test Fixture Schematic -- Alternate Characterization for Driver/Pre - Driver Performance Table 7. MWIC930NR1(GNR1) Test Fixture Component Designations and Values -- Alternate Characterization for Driver/Pre - Driver Performance Part Description Part Number Manufacturer *C1 12 pF High Q Capacitor ATC600S120JW ATC *C2 8.2 pF High Q Capacitor - CDMA Fixture ATC600S8R2CW ATC *C3 5.6 pF High Q Capacitor ATC600S5R6CW ATC *C4, C5, C7, C8, C9 47 pF High Q Capacitors ATC600S470JW ATC C6, C13, C14, C15 1 F Chip Capacitors GRM42 - 2X7R105K050AL Murata C10, C11, C12 10 nF Chip Capacitors C0603C103J5R Kemet R1, R2 1 kW, 1/8 W Chip Resistors RM73B2AT102J KOA Speer R3, R4 1 MW, 1/4 W Chip Resistors RM73B2BT105J KOA Speer * For output matching and bypass purposes, it is strongly recommended to use these exact capacitors. MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 9 ACPR, ADJACENT CHANNEL POWER RATIO (dBc) TYPICAL CHARACTERISTICS DRIVER/PRE- DRIVER PERFORMANCE -60 -61 ACPR -62 System Noise Floor -63 VDD = 27 Vdc IDQ1 = 105 mA, IDQ2 = 230 mA f = 880 MHz N-CDMA IS-95 Pilot, Sync, Paging, Traffic Codes 8 Through 13 -64 -65 20 22 24 26 28 30 Pout, OUTPUT POWER (dBm) Figure 15. Single - Carrier N - CDMA ACPR versus Output Power MWIC930NR1 MWIC930GNR1 10 RF Device Data Freescale Semiconductor Zo = 50 Zin f = 740 MHz f = 960 MHz f = 740 MHz Zload f = 960 MHz VDD = 27 Vdc, IDQ1 = 105 mA, IDQ2 = 230 mA, Pout = 5 W Avg. f MHz Zin Zload 740 53.944 + j6.745 2.535 + j1.662 760 54.452 + j7.112 2.602 + j1.080 780 55.006 + j7.440 2.688 + j0.548 800 55.549 + j7.656 2.659 + j0.064 820 55.604 + j7.855 2.615 + j0.329 840 55.190 + j7.835 2.568 + j0.450 860 55.110 + j7.410 2.494 + j0.620 880 55.752 + j4.763 2.444 + j0.650 900 45.606 + j5.832 2.440 + j0.689 920 49.206 + j9.284 2.134 + j0.930 940 49.939 + j9.030 2.155 + j0.835 960 50.088 + j8.752 2.095 + j1.235 Zin = Device input impedance as measured from RF input to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Z in Z load Figure 16. Series Equivalent Input and Load Impedance -- Alternate Characterization for Driver/Pre - Driver Performance MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 11 NOTES MWIC930NR1 MWIC930GNR1 12 RF Device Data Freescale Semiconductor NOTES MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 13 PACKAGE DIMENSIONS MWIC930NR1 MWIC930GNR1 14 RF Device Data Freescale Semiconductor MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 15 MWIC930NR1 MWIC930GNR1 16 RF Device Data Freescale Semiconductor MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 17 MWIC930NR1 MWIC930GNR1 18 RF Device Data Freescale Semiconductor MWIC930NR1 MWIC930GNR1 RF Device Data Freescale Semiconductor 19 How to Reach Us: Home Page: www.freescale.com E - mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. 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For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale's Environmental Products program, go to http://www.freescale.com/epp. MWIC930NR1 MWIC930GNR1 Document Number: MWIC930N Rev. 6, 5/2006 20 RF Device Data Freescale Semiconductor