BC237B
General Purpose Transistor NPN
Page 1 10/05/08 V1.1
Description:
General purpose NPN silicon planar epitaxial transistors, best suited for use in driver
stages of audio amplifiers, low noise input stages of tape recorders. Hi-Fi amplifiers,
signal processing circuits of television receivers.
Dimensions Minimum Maximum
A 4.32 5.33
B 4.45 5.20
C 3.18 4.19
D 0.41 0.55
E 0.35 0.50
F
G 1.14 1.40
H 1.14 1.53
K 12.70 -
L 1.982 2.082
Dimensions : Millimetres
Pin Configuration:
1. Emitter
2. Base
3. Collector
TO-92 Plastic Package
BC237B
General Purpose Transistor NPN
Page 2 10/05/08 V1.1
Parameter Symbol BC237B Units
Collector-Emitter Voltage VCEO 45
VCollector-Emitter Voltage VCES 50
Emitter-Base Voltage VEBO 6
Collector Current Continuous IC100 mA
Power Dissipation at Ta= 25°C
Derate Above 25°C PD
350
2.8 mW
mW/°C
Power Dissipation at Tc= 25°C
Derate Above 25°C 1
8W
mW/°C
Operating and Storage Junction
Temperature Range Tj, Tstg -55 to + 150 °C
Thermal Resistance
Junction to Ambient Rth (j-a) 375 ºC/W
Junction to Case Rth (j-c) 125
Electrical Characteristics (Ta= 25°C unless specified otherwise)
Parameter Symbol Test Condition Minimum Typical Maximum Units
Collector Emitter Voltage VCEO IC= 2mA, IB= 0 45 - - V
Emitter Base Voltage VEBO IE= 100µA, IC = 0 6 - -
Collector Cut off Current ICES VCE = 50V, VBE = 0
VCE = 50V, VBE = 0, Ta= 125°C - - 15
4nA
µA
DC Current Gain hFE IC = 2mA, VCE = 50V 200 290 460 -
Collector Emitter Saturation Voltage VCE (sat) IC = 10mA, IB= 0.5mA
IC = 100mA, IB= 5mA* -0.07
0.2 0.2
0.6
V
Base Emitter Saturation Voltage VBE (sat) IC= 10mA, IB = 0.5mA
IC= 100mA, IB = 0.5mA* - 0.6 0.83
1.05
Base Emitter On Voltage VBE (on)
IC = 100µA, VCE = 5V
IC = 2mA, VCE = 5V
IC = 100mA, VCE = 5V* 0.55
0.5
0.62
0.83 0.7
Dynamic Characteristics
Transition Frequency fT
IC= 0.5mA, VCE = 3V
f = 100MHz
IC= 10mA, VCE = 5V
f = 100MHz
-
150
100
200 - MHz
Collector Output Capacitance Cob VCB = 10V, IE= 0
f = 1MHz - - 4.50 pF
*Pulse Condition: Pulse Width 300µs, Duty Cycle 2%.
BC237B
General Purpose Transistor NPN
Page 3 10/05/08 V1.1
Electrical Characteristics Continued (Ta= 25°C unless specified otherwise)
Parameter Symbol Test Condition Minimum Typical Maximum Units
Dynamic Characteristics
Emitter Input Capacitance Cib VEB = 0.5V, IE = 0
f = 1MHz - 8.0 pF
Noise Figure NF VCE = 5V, IC = 2mA
Rs= 2.0kW, f = 1KHz
F = 200Hz - 2 10 dB
Specifications
VCEO
(V)
VCBO
Maximum
(V)
IC
(A)
hFE
Minimum
at IC= 2mA
fT
Minimum
(MHz)
Ptot
(mW) Package Part Number
45 50 0.1 200 200 350 TO-92 BC237B
For enquiries from all other markets
BC237B
General Purpose Transistor NPN
Page <4> 10/05/08 V1.1
Notes:
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