ISL6614CBZR5214 - Intersil - Datasheet.Directory

FN9155.5

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 1-888-468-3774 |Intersil (and design) is a registered trademark of Intersil Americas Inc.

All other trademarks mentioned are the property of their respective owners.

ISL6614

Dual Advanced Synchronous Rectified

Buck MOSFET Drivers with Protection

Features

The ISL6614 integrates two ISL6613 MOSFET drivers and is

specifically designed to drive two independent power

channels in a Multi-Phase interleaved buck converter

topology. These drivers combined with HIP63xx or ISL65xx

Multi-Phase Buck PWM controllers and N-Channel

MOSFETs form complete core-voltage regulator solutions for

advanced microprocessors.

The ISL6614 drives both the upper and lower gates

simultaneously over a range from 5V to 12V. This drive

voltage provides the flexibility necessary to optimize

applications involving trade-offs between gate charge and

conduction losses.

An advanced adaptive zero shoot-through protecti on is

integrated to prevent both the upper and lower MOSFETs

from conducting simultaneously and to minimize th e dead

time. These products add an overvoltage protecti on feature

operational before VCC exceeds its turn-on threshold, at

which the PHASE node is connected to the gate of the low

side MOSFET (LGATE). The output voltage of the converter

is then limited by the threshold of the low side MOSFET,

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during startup. The over-

temperature protection featur e prevents failures resulting

from excessive power dissipation by shutting off the outputs

when its junction temperature exceeds +150°C (typically).

The driver resets once its junction temperature returns to

+108°C (typically).

The ISL6614 also featu r es a three- state PWM input which,

working together with Intersil’s multi-phase PWM controllers,

prevents a negative transient on the output voltage when the

output is shut down. This feature elimi n at es the Schottky

diode that is used in some systems for protecting the load

from reversed output voltage events.

Features

• Pin-to-pin Compatible with HIP6602 SOIC Family for

Better Performance and Extra Protection Features

• Quad N-Channel MOSFET Drives for Two Synchronous

Rectified Bridges

• Advanced Adaptive Zero Shoot-T hrough Protection

- Body Diode Detection

- Auto-zero of rDS(ON) Conduction Offset Effect

• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency

• Internal Bootstrap Schottky Diode

• Bootstrap Capacitor Overcharging Prevention

• Supports High Switching Frequency (u p to 1MHz)

- 3A Sinking Current Capability

- Fast Rise/F all Times and Low Propagation Delays

• Three-State PWM Input for Output Stage Shutdown

• Three-State PWM Input Hysteresis for Applications With

Power Sequencing Requirement

• Pre-POR Overvoltage +Protection

• VCC Undervoltage Protection

• Over-Temperature Protection (OTP) with +42°C Hysteresis

• Expandable Bottom Copper Pad for Enhanced Heat Sinking

• QFN Package:

- Compliant to JEDEC PUB95 MO-220 QFN - Quad Flat

No Leads - Package Outline

- Near Chip Scale Package Foo tp r int, which Improves

PCB Efficiency and has a Thinner Profile

• Pb-free Available (RoHS compliant)

Applications

• Core Regulators for Intel® and AMD® Microprocessors

• High Current DC/DC Converters

• High Frequency and High Efficiency VRM and VRD

Related Literature

• Technical Brief TB363 “Guidelines for Handling and

Processing Moisture Sensitive Surface Mo unt Devices

(SMDs)”

• Technical Brief 400 and 417 for Power Train Design,

Layout Guidelines, and Feedba ck Compensation Design

Data Sheet May 5, 2008

2FN9155.5

May 5, 2008

ISL6614

ISL6614CB, ISL6614CBZ, ISL6614IB

(14 LD SOIC)

TOP VIEW

ISL6614CR, ISL6614CRZ, ISL6614IR, ISL6614IRZ

(16 LD QFN)

TOP VIEW

Ordering Information

PART NUMBER PART MARKING TEMP. RANGE (°C) PACKAGE PKG. DWG. #

ISL6614CB* ISL6614CB 0 to +85 14 Ld SOIC M14.15

ISL6614CBZ* (Note) 6614CBZ 0 to +85 14 Ld SOIC (Pb-free) M14.15

ISL6614CBZA* (Note) 6614CBZ 0 to +85 14 Ld SOIC (Pb-free) M14.15

ISL6614CR* ISL 6614CR 0 to +85 16 Ld 4x4 QFN L16.4x4

ISL6614CRZ* (Note) 66 14CRZ 0 to +85 16 Ld 4x4 QFN (Pb-free) L16.4x4

ISL6614CRZA* (Note) 66 14CRZ 0 to +85 16 Ld 4x4 QFN (Pb-free) L16.4x4

ISL6614IB* ISL6614IB -40 to +85 14 Ld SOIC M14.15

ISL6614IBZ* (Note) 6614IBZ -40 to +85 14 Ld SOIC (Pb-free) M14.15

ISL6614IR* ISL 6614IR -40 to +85 16 Ld 4x4 QFN L16.4x4

ISL6614IRZ* (Note) 66 14IRZ -40 to +85 16 Ld 4x4 QFN (Pb-free) L16.4x4

*Add “-T” suffix for tape and reel. Please refer to TB347 for details on reel specifications.

NOTE: These Intersil Pb-free plastic packaged products employ special Pb-free material sets; molding compounds/die attach materials and 100%

matte tin plate PLUS ANNEAL - e3 termination finish, which is RoHS compliant and compatible with both SnPb and Pb-free soldering operations.

Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J

STD-020.

PWM1

PWM2

GND

LGATE1

PHASE1

UGATE1

BOOT1

PVCC

5BOOT2

UGATE2

PHASE2

VCC

PGND

LGATE2

11 1

GND

LGATE1

PVCC

PGND

PWM2

PWM1

VCC

PHASE1

16 14 13

6578

UGATE1

BOOT1

BOOT2

UGATE2

LGATE2

PHASE2

GND

3FN9155.5

May 5, 2008

Block Diagram

FOR ISL6614CR, THE PAD ON THE BOTTOM SIDE OF

THE QFN PACKAGE MUST BE SOLDERED TO THE CIRCUIT’S GROUND.

PRE-POR OVP

FEATURES

OTP AND

VCC

PWM1

+5V

10k

CONTROL

LOGIC

SHOOT-

THROUGH

PROTECTION

BOOT1

UGATE1

PHASE1

LGATE1

PGND

PWM2

10k

8k SHOOT-

THROUGH

PROTECTION

BOOT2

UGATE2

PHASE2

LGATE2

+5V

GND

PVCC

PGND

PAD

CHANNEL 1

CHANNEL 2

PVCC

ISL6614

4FN9155.5

May 5, 2008

Typical Application - 4 Channel Converter Using ISL65xx and ISL6614 Gate Drivers

MAIN

CONTROL

ISL65xx

+5V

COMP

PWM1

PWM2

ISEN2

PWM3

PWM4

ISEN4

VSEN

FS/DIS

ISEN1

ISEN3

GND

BOOT2

UGATE2

PHASE2

LGATE2

BOOT1

UGATE1

PHASE1

LGATE1

PWM1

PVCC

5V TO 12V

VCC

DUAL

DRIVER

ISL6614

BOOT2

UGATE2

PHASE2

LGATE2

BOOT1

UGATE1

PHASE1

LGATE1

PWM1

PVCC

VCC

DUAL

DRIVER

ISL6614

VCC

+VCORE

PWM2

VID

PGOOD

+12V

5V TO 12V

+12V

PGNDGND

ISL6614

5FN9155.5

May 5, 2008

Absolute Maximum Ratings Thermal Information

Supply Voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15V

Supply Voltage (PVCC) . . . . . . . . . . . . . . . . . . . . . . . . . VCC + 0.3V

BOOT Voltage (VBOOT-GND). . . . . . . . . . . . . . . . . . . . . . . . . . . .36V

Input Voltage (VPWM) . . . . . . . . . . . . . . . . . . . . . .GND - 0.3V to 7V

UGATE. . . . . . . . . . . . . . . . . . . VPHASE - 0.3VDC to VBOOT + 0.3V

VPHASE - 3.5V (<100ns Pulse Width, 2µJ) to VBOOT + 0.3V

LGATE . . . . . . . . . . . . . . . . . . . . . . GND - 0.3VDC to VPVCC + 0.3V

GND - 5V (<100ns Pulse Width, 2µJ) to VPVCC + 0.3V

PHASE. . . . . . . . . . . . . . . . . . . . . . . . . . . . GND - 0.3VDC to 15VDC

GND - 8V (<400ns, 20µJ) to 30V (<200ns, VBOOT -GND <36V)

ESD Rating

Human Body Model . . . . . . . . . . . . . . . . . . . .Class I JEDEC STD

Thermal Resistance (Typical) . . . . . . . . . . θJA(°C/W) θJC(°C/W)

SOIC Package (Note 1) . . . . . . . . . . . . 90 N/A

QFN Package (Notes 2, 3). . . . . . . . . . 44 4.5

Maximum Junction Temperature (Plastic Package) . . . . . . .+150°C

Maximum Storage Temperature Range. . . . . . . . . .- 65°C to +150°C

Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

Recommended Operating Conditions

Ambient Temperature Range. . . . . . . . . . . . . . . . . . .-40°C to +85°C

Maximum Operating Junction Temperature. . . . . . . . . . . . . +125°C

Supply Voltage, VCC. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12V ±10%

Supply Voltage Range, PVCC . . . . . . . . . . . . . . . . 5V to 12V ±10%

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and

result in failures not covered by warranty.

NOTES:

1. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air.

2. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See

Tech Brief TB379.

3. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted.

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

VCC SUPPLY CURRENT

Bias Supply Current IVCC fPWM = 300kHz, VPVCC = 12V - 7.1 - mA

Gate Drive Bias Current IPVCC fPWM = 300kHz, VPVCC = 12V - 9.7 - mA

POWER-ON RESET AND ENABLE

VCC Rising Threshold 0°C to +85°C 9.35 9.80 10.05 V

-40°C to +85°C 8.35 - 10.05 V

VCC Falling Threshold 0°C to +85°C 7.35 7.60 8.00 V

-40°C to +85°C 6.35 - 8.00 V

PWM INPUT (See “TIMING DIAGRAM” on page 8)

Input Current IPWM VPWM = 5V - 450 - µA

VPWM = 0V - -400 - µA

PWM Rising Threshold VCC = 12V - 3.00 - V

PWM Falling Threshold VCC = 12V - 2.00 - V

Typical Three-State Shutdown Window VCC = 12V 1.80 - 2.40 V

Three-State Lower Gate Falling Threshold VCC = 12V - 1.50 - V

Three-State Lower Gate Rising Threshold VCC = 12V - 1.00 - V

Three-State Upper Gate Rising Threshold VCC = 12V - 3.20 - V

Three-State Upper Gate Falling Threshold VCC = 12V - 2.60 - V

Shutdown Hold-off Time tTSSHD - 245 - ns

UGATE Rise Time tRU VPVCC = 12V, 3nF Load, 10% to 90% - 26 - ns

LGATE Rise Time tRL VPVCC = 12V, 3nF Load, 10% to 90% - 18 - ns

UGATE Fall Time tFU VPVCC = 12V, 3nF Load, 90% to 10% - 18 - ns

LGATE Fall Time tFL VPVCC = 12V, 3nF Load, 90% to 10% - 12 - ns

UGATE Turn-On Propagation Delay (Note 4) tPDHU VPVCC = 12V, 3nF Load, Adaptive - 10 - ns

ISL6614

6FN9155.5

May 5, 2008

LGATE Turn-On Propagation Delay (Note 4) tPDHL VPVCC = 12V, 3nF Load, Adaptive - 10 - ns

UGATE Turn-Off Propagation Delay (Note 4) tPDLU VPVCC = 12V, 3nF Load - 10 - ns

LGATE Turn-Off Propagation Delay (Note 4) tPDLL VPVCC = 12V, 3nF Load - 10 - ns

LG/UG Three-State Propagation Delay (Note 4) tPDTS VPVCC = 12V, 3nF Load - 10 - ns

OUTPUT (Note 4)

Upper Drive Source Current IU_SOURCE VPVCC = 12V, 3nF Load - 1.25 - A

Upper Drive Source Impedance RU_SOURCE 150mA Source Current 1.4 2.0 3.0 Ω

Upper Drive Sink Current IU_SINK VPVCC = 12V, 3nF Load 2 - A

Upper Drive Transition Sink Impedance RU_SINK_TR -1.32.2Ω

Upper Drive DC Sink Impedance RU_SINK_DC 150mA Source Current 0.9 1.65 3.0 Ω

Lower Drive Source Current IL_SOURCE VPVCC = 12V, 3nF Load - 2 - A

Lower Drive Source Impedance RL_SOURCE 150mA Source Current 0.85 1.3 2.2 Ω

Lower Drive Sink Current IL_SINK VPVCC = 12V, 3nF Load - 3 - A

Lower Drive Sink Impedance RL_SINK 150mA Sink Current 0.60 0.94 1.35 Ω

OVER-TEMPERATURE SHUTDOWN

Thermal Shutdown Setpoint - 150 - °C

Thermal Recovery Setpoint - 108 - °C

NOTES:

4. Limits should be considered typical and are not production tested.

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. (Continued)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

ISL6614

7FN9155.5

May 5, 2008

Functional Pin Description

PACKAGE PIN

NUMBER PIN

SYMBOL FUNCTIONSOIC DFN

1 15 PWM1 The PWM signal is the control input for the Channel 1 driver . The PWM signal can enter three distinct states during

operation, see “Three-S tate PWM Input” on page 8 for further details. Connect this pin to the PWM output of the

controller.

2 16 PWM2 The PWM signal is the control input for the Channel 2 driver . The PWM signal can enter three distinct states during

operation, see see “Three-S t ate PWM Input” on page 8 for further details. Connect this pin to the PWM output of the

controller.

3 1 GND Bias and reference ground. All signals are referenced to this node.

4 2 LGATE1 Lower gate drive output of Channel 1. Connect to gate of the low-side power N-Channel MOSFET.

5 3 PVCC This pin supplies power to both the lower and higher gate drives in ISL6614. Its operating range is +5V to 12V.

Place a high quality low ESR ceramic capacitor from this pin to GND.

6 4 PGND It is the power ground return of both low gate drivers.

- 5, 8 N/C No Connection.

7 6 LGATE2 Lower gate drive output of Channel 2. Connect to gate of the low-side power N-Channel MOSFET.

8 7 PHASE2 Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET in Channel 2. This

pin provides a return path for the upper gate drive.

9 9 UGATE2 Upper gate drive output of Channel 2. Connect to gate of high-side power N-Channel MOSFET.

10 10 BOOT2 Floating bootstrap supply pin for the upper gate drive of Channel 2. Connect the bootstrap capacitor between this

pin and the PHASE2 pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See the

“Internal Bootstrap Device” on page 9 for guidance in choosing the capacitor value.

11 11 BOOT1 Floating bootstrap supply pin for the upper gate drive of Channel 1. Connect the bootstrap capacitor between this

pin and the PHASE1 pin. The bootstrap capacitor provides the charge to turn on the upper MOSFET. See “Internal

Bootstrap Device” on page 9 for guidance in choosing the capacitor value.

12 12 UGATE1 Upper gate drive output of Channel 1. Connect to gate of high-side power N-Channel MOSFET.

13 13 PHASE1 Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET in Channel 1. This

pin provides a return path for the upper gate drive.

14 14 VCC Connect this pin to a +12V bias supply. It supplies power to internal analog circuits. Place a high quality low ESR

ceramic capacitor from this pin to GND.

- 17 PAD Connect this pad to the power ground plane (GND) via thermally enhanced connection.

ISL6614

8FN9155.5

May 5, 2008

Description

Operation

Designed for versatility and speed, the ISL6614 MOSFET

driver controls both high-side and low-side N-Channel FETs

of two half-bridge power trains from two externally provided

PWM signals.

Prior to VCC exceeding its POR level, the Pre-POR

overvoltage protection function is activated; the upper gate

(UGATE) is held low and the lower gate (LGATE), controlled by

the Pre-POR overvoltage protection circuits, is connected to the

PHASE. Once the VCC volt a ge surpasses the VCC Rising

Threshold (See “Electrical S pecifications” table on page 5), the

PWM signal takes control of gate transitions. A rising edge on

PWM initiates the turn-off of the lower MOSFET (see “TIMING

DIAGRAM” on page 8). After a short propagation delay [tPDLL],

the lower gate begins to fall. T ypical fall times [tFL] are provided

in the “Electrical Specifications” table on p age 5. Adaptive

shoot-through circuitry monitors the PHASE voltage and

determines the upper gate delay time [tPDHU]. This prevent s

both the lower and upper MOSFETs from conducting

simultaneously. Once this delay period is complete, the upper

gate drive begins to rise [tRU] and the upper MOSFET turns on.

A falling transition on PWM results in the turn-off of the upper

MOSFET and the turn-on of the lower MOSFET. A short

propagation delay [tPDLU] is encountered before the upper gate

begins to fall [tFU]. Again, the adaptive shoot-through circuitry

determines the lower gate delay time, tPDHL. The PHASE

voltage and the UGATE voltage are monitored, and the lower

gate is allowed to rise after PHASE drop s below a level or the

voltage of UGATE to PHASE reaches a level depending upon

the current direction (See the following section for details). The

lower gate then rises [tRL], turning on the lower MOSFET.

Advanced Adaptive Zero Shoot-Through Deadtime

Control (Patent Pending)

These drivers incorporate a unique adaptive deadtime control

technique to minimize deadtime, resulting in high efficiency

from the reduced freewheeling time of the lower MOSFETs’

body-diode conduction, and to prevent the upper and lower

MOSFETs from conducting simultaneously. This is

accomplished by ensuring either rising gate turns on its

MOSFET with minimum and sufficient delay after the other has

turned off.

During turn-off of the lower MOSFET, the PHASE voltage is

monitored until it reaches a -0.2V/+0.8V trip point for a

forward/reverse current, at which time the UGATE is released

to rise. An auto-zero comparato r is used to correct the

rDS(ON) d rop in the pha se volt ag e preventing from false

detection of the -0.2V phase level during rDS(ON) conduction

period. In the case of zero current, the UGATE is released

after 35ns delay of the LGATE dropping below 0.5V. During

the phase detection, the disturbance of LGATE’s falling

transition on the PHASE node is blanked out to prevent falsely

tripping. Once the PHASE is high, the advanced adaptive

shoot-through circuitry monitors the PHASE and UGATE

voltages du ring a PWM fall ing edge and the subsequent

UGATE turn-off. If either the UGATE falls to less than 1.75V

above the PHASE or the PHASE falls to less than +0.8V, the

LGATE is released to turn on.

Three-State PWM Input

A unique feature of these drivers and other Intersil drivers is

the addition of a shutdown window to the PWM input. If the

PWM signal enters and remains within the shutdown window

for a set holdoff time, the driver outputs are disabled and

both MOSFET gates are pulled and held low . The shutdown

state is removed when the PWM signal moves outside the

shutdown window. Oth erwise, the PWM rising and falling

thresholds outlined in the “Electrical Specifications” table on

page 5 determine when the lower and upper gates are

enabled.

This feature helps prevent a negative transient on the output

voltage when the output is shut down, eliminating the

PWM

UGATE

LGATE

tFL

tPDHU

tPDLL

tRL tTSSHD

tPDTS

1.5V<PWM<3.2V 1.0V<PWM<2.6V

tFU

tRU

tPDLU

tPDHL

tTSSHD

FIGURE 1. TIMING DIAGRAM

ISL6614

9FN9155.5

May 5, 2008

Schottky diode that is used in some systems for protecting

the load from reversed output voltage events.

In addition, more than 400mV hysteresis also incorporates

into the three-state shutdown window to eliminate PWM

input oscill a ti on s due to the capacitive load seen by the

PWM input through the body diode of the controller’s PWM

output when the power-up and/or power -down sequence of

bias supplies of the driver and PWM controller are required.

Power-On Reset (POR) Fun ction

During initial startup, the VCC voltage rise is monitored.

Once the rising VCC voltage exceeds 9.8V (typically),

operation of the driver is enabled and the PWM input signal

takes control of the gate drives. If VCC drops below the

falling threshold of 7.6V (typically), operation of the driver is

disabled.

Pre-POR Overvoltage Protection

Prior to VCC exceeding its POR level, the upper gate is held

low and the lower gate is controlled by th e overvoltage

protection circuits during initial startup. The PHASE is

connected to the gate of the low side MOSFET (LGATE),

which provides some protection to the microprocessor if the

upper MOSFET(s) is shorted during initial startup. For

complete protection, the low side MOSFET should have a

gate threshold well below the maximum voltage rating of the

load/microprocessor.

When VCC drops below its POR level, both gates pull low

and the Pre-POR overvoltage protection circuits are not

activated until VCC resets.

Internal Bootstra p De vi ce

Both drivers feature an internal bootstrap Schottky diode.

Simply adding an external capacitor across the BOOT and

PHASE pins completes the bootstrap circuit. The bootstrap

function is also designed to prevent the bootstrap capacitor

from overcharging due to the large negative swing at the

trailing-edge of the PHASE node. This reduces voltage

stress on the boot to phase pins.

The bootstrap capacitor must have a maximum voltage

rating above UVCC + 5V and its capacitance value can be

chosen from Equation 1:

where QG1 is the amount of gate charge per upper MOSFET

at VGS1 gate-source voltage and NQ1 is the number of control

MOSFETs per channel. The ΔVBOOT_CAP term is defined as

the allowable droop in the rail of the upper gate drive.

As an example, suppose two IRLR7821 FETs are chosen as

the upper MOSFETs. The gate charge, QG, from the data

sheet is 10nC at 4.5V (VGS) gate-source voltage. Then the

QGATE is calculated to be 53nC for PVCC = 12V. We will

assume a 200mV droop in drive voltage over the PWM

cycle. We find that a bootstrap capacitance of at least

0.267µF is required.

Gate Drive Voltage Versatility

The ISL6614 provides the user flexibility in choosing the

gate drive voltage for efficiency optimization. The ISL6614

ties the upper and lower drive rails together . Simply applying

a voltage from 5V up to 12V on PVCC sets both gate drive

rail voltages simultaneously. Connecting a SOT-23 package

type of dual Schottky diodes from the VCC to BOOT1 and

BOOT2 can bypass the internal bootstrap devices of both

upper gates so that the part can operate as a dual ISL6612

driver, which has a fixed VCC (12V typically) on the upper

gate and a programmable lower gate drive voltage.

Over-Temperature Protection (OTP)

When the junction temperature of the IC exceeds +150°C

(typically), both upper and lower gates turn off. The driver

stays off and does not return to normal operation until its

junction temperature comes down below +108°C (typically).

For high frequency applications, applying a lower voltage to

PVCC helps reduce the power dissipation and lower the

junction temperature of the IC. This method reduces the risk

of tripping OTP.

Power Dissipation

Package powe r dis s ipation is mainl y a function of the

switching frequency (fSW), the output drive impedance, the

external gate resistance, and the selected MOSFET’s

internal gate resistance and total gate charge. Calculating

the power dissipation in the driver for a desired application is

critical to ensure safe operation. Exceeding the maximum

allowable power dissipation level will push the IC beyond the

maximum recommended operating junction temperature of

+125°C. The maximum allowa ble IC power dissipation for

CBOOT_CAP QGATE

ΔVBOOT_CAP

--------------------------------------

≥

QGATE QG1 PVCC•

VGS1

------------------------------------NQ1

•=

(EQ. 1)

50nC

20nC

FIGURE 2. BOOTSTRAP CAP ACIT ANCE vs BOOT RIPPLE

VOLTAGE

ΔVBOOT_CAP (V)

CBOOT_CAP (µF)

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0 0.30.0 0.1 0.2 0.4 0.5 0.6 0.90.7 0.8 1.0

QGATE = 100nC

ISL6614

10 FN9155.5

May 5, 2008

the SO14 package is approximately 1W at room

temperature, while the power dissipation capacity in the

QFN packages, with an exposed heat escape pad, is around

2W. See “Layout Considerations” on page 10 for thermal

transfer improvement sugge stions. When designing the

driver into an application, it is recommended that the

following calculation is used to ensure safe operation at the

desired frequency for the selected MOSFETs. The total gate

drive power losses due to the gate charge of MOSFETs and

the driver’s internal circuitry and their corresponding average

driver current can be estimated using Equations 2 and 3,

respectively:

where the gate charge (QG1 and QG2) is defined at a

particular gate to source voltage (VGS1and VGS2) in the

corresponding MOSFET datasheet; IQ is the driver’s total

quiescent current with no load at both drive outputs; NQ1

and NQ2 are number of upper and lower MOSFETs,

respectively; PVCC is the drive voltages for both upper and

lower FETs, respectively. The IQ*VCC product is the

quiescent power of the driver without capacitive load and is

typically 200mW at 300kHz.

The tot a l gate drive power losses are dissipated amon g the

resistive components along the transition path. The drive

resistance dissipates a portion of the total gate drive power

losses, the rest will be dissipated by the external gate

resistors (RG1 and RG2) and the internal gate resistors

(RGI1 and RGI2) of MOSFETs. Figures 3 and 4 show the

typical upper and lower gate drives turn-on transition path.

The power dissipation on the driver can be roughly

estimated as:

Layout Considerations

For heat spreading, place copper underneath the IC whether

it has an exposed pad or not. The copper area can be

extended beyond the bottom area of the IC and/or

connected to buried copper plane(s) with thermal vias. This

combination of vias for vertical heat escape, extended

copper plane, and buried planes fo r heat spreading allows

the IC to achieve its full thermal potential.

Place each channel power component as close to each

other as possible to reduce PCB copper losses and PCB

parasitics: shortest distance between DRAINs of upper FETs

and SOURCEs of lower FETs; shortest distance between

DRAINs of lower FETs and the power ground. Thus, smaller

amplitudes of positive and negative ringing are on the

switching edges of the PHASE node. However, some space

in between the power components is required for good

airflow. The traces from the drivers to the FETs should be

kept short and wide to reduce the inductance of the traces

and to promote clean drive signals.

PQg_TOT 2P

Qg_Q1

•2P

Qg_Q2

•IQVCC•++=(EQ. 2)

PQg_Q1 QG1 PVCC2

•

VGS1

---------------------------------------FSW

•NQ1

•=

PQg_Q2 QG2 PVCC2

•

VGS2

---------------------------------------FSW

•NQ2

•=

IDR QG1 NQ1

•

VGS1

------------------------------QG2 NQ2

•

VGS2

------------------------------

⎝⎠

⎜⎟

⎛⎞

FSW 2•IQ

+•=

(EQ. 3)

PDR 2P•DR_UP 2P•DR_LOW IQVCC•++=(EQ. 4)

PDR_UP RHI1

RHI1 REXT1

-------------------------------------- RLO1

RLO1 REXT1

----------------------------------------

⎝⎠

⎜⎟

⎛⎞

PQg_Q1

---------------------

•=

PDR_LOW RHI2

RHI2 REXT2

-------------------------------------- RLO2

RLO2 REXT2

----------------------------------------

⎝⎠

⎜⎟

⎛⎞

PQg_Q2

---------------------

•=

REXT1 RG1 RGI1

NQ1

-------------

+= REXT2 RG2 RGI2

NQ2

-------------

FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH

FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH

RGI1

RG1

BOOT

RHI1 CDS

CGS

CGD

RLO1

PHASE

PVCC

RGI2

RG2

RHI2 CDS

CGS

CGD

RLO2

ISL6614

11 FN9155.5

May 5, 2008

ISL6614

Quad Flat No-Lead Plastic Package (QFN)

Micro Lead Frame Plastic Package (MLFP)

L16.4x4

16 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE

(COMPLIANT TO JEDEC MO-220-VGGC ISSUE C)

SYMBOL

MILLIMETERS

NOTESMIN NOMINAL MAX

A 0.80 0.90 1.00 -

A1 - - 0.05 -

A2 - - 1.00 9

A3 0.20 REF 9

b 0.23 0.28 0.35 5, 8

D 4.00 BSC -

D1 3.75 BSC 9

D2 1.95 2.10 2.25 7, 8

E 4.00 BSC -

E1 3.75 BSC 9

E2 1.95 2.10 2.25 7, 8

e 0.65 BSC -

k0.25 - - -

L 0.50 0.60 0.75 8

L1 - - 0.15 10

N162

Nd 4 3

Ne 4 3

P- -0.609

θ--129

Rev. 5 5/04

NOTES:

1. Dimensioning and tolerancing conform to ASME Y14.5-1994.

2. N is the number of terminals.

3. Nd and Ne refer to the number of terminals on each D and E.

4. All dimensions are in millimeters. Angles are in degrees.

5. Dimension b applies to the metallized terminal and is measured

between 0.15mm and 0.30mm from the terminal tip.

6. The configuration of the pin #1 identifier is optional, but must be

located within the zone indicated. The pin #1 identifier may be

either a mold or mark feature.

7. Dimensions D2 and E2 are for the exposed pads which provide

improved electrical and thermal performance.

8. Nominal dimensions are provided to assist with PCB Land Pattern

Design efforts, see Intersil Technical Brief TB389.

9. Features and dimensions A2, A3, D1, E1, P & θ are present when

Anvil singulation method is used and not present for saw

singulation.

10. Depending on the method of lead termination at the edge of the

package, a maximum 0.15mm pull back (L1) maybe present. L

minus L1 to be equal to or greater than 0.3mm.

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result

from its use. No lice nse is gran t ed by i mpli catio n or other wise u nder an y p a tent or patent right s of Int ersi l or it s sub sidi aries.

For information regarding Intersil Corporation and its products, see www.intersil.com

FN9155.5

May 5, 2008

ISL6614

Small Outline Plastic Packages (SOIC)

NOTES:

1. Symbols are defined in the “MO Series Symbol List” in Section 2.2 of

Publication Number 95.

2. Dimensioning and tolerancing per ANSI Y14.5M-1982.

3. Dimension “D” does not include mold flash, protrusions or gate burrs.

Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006

inch) per side.

4. Dimension “E” does not include interlead flash or protrusions. Interlead

flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.

5. The chamfer on the body is optional. If it is not present, a visual index

feature must be located within the crosshatched area.

6. “L” is the length of terminal for soldering to a substrate.

7. “N” is the number of terminal positions.

8. Terminal numbers are shown for reference only.

9. The lead width “B”, as measured 0.36mm (0.014 inch) or greater

above the seating plane, shall not exceed a maximum value of

0.61mm (0.024 inch).

10. Controlling dimension: MILLIMETER. Converted inch dimensions

are not necessarily exact.

INDEX

AREA

123

-B-

0.25(0.010) C AMBS

-A-

-C-

SEATING PLANE

0.10(0.004)

h x 45o

H0.25(0.010) BM M

M14.15 (JEDEC MS-012-AB ISSUE C)

14 LEAD NARROW BODY SMALL OUTLINE PLASTIC

PACKAGE

SYMBOL

INCHES MILLIMETERS

NOTESMIN MAX MIN MAX

A 0.0532 0.0688 1.35 1.75 -

A1 0.0040 0.0098 0.10 0.25 -

B 0.013 0.020 0.33 0.51 9

C 0.0075 0.0098 0.19 0.25 -

D 0.3367 0.3444 8.55 8.75 3

E 0.1497 0.1574 3.80 4.00 4

e 0.050 BSC 1.27 BSC -

H 0.2284 0.2440 5.80 6.20 -

h 0.0099 0.0196 0.25 0.50 5

L 0.016 0.050 0.40 1.27 6

N14 147

α0o8o0o8o-

Rev. 0 12/93