February 2004
2004 Fairchild Semiconductor Corporation FDD6612A/FDU6612A Rev E(W)
FDD6612A/FDU6612A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) , fast switching speed and
extremely low RDS(ON) in a small package.
Applications
• DC/DC converter
• Motor Drives
Features
• 30 A, 30 V RDS(ON) = 20 mΩ @ VGS = 10 V
RDS(ON) = 28 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast Switching
• High performance trench technology for extremely
low RDS(ON)
G
S
D
TO-252
D-PAK
(TO-252) GDS
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol Parameter Ratings Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
IDContinuous Drain Current @TC=25°C (Note 3) 30 A
@TA=25°C (Note 1a) 9.5
Pulsed (Note 1a) 60
Power Dissipation @TC=25°C (Note 1) 36
@TA=25°C (Note 1a) 2.8
PD
@TA=25°C (Note 1b) 1.3
W
TJ, TSTG Operating and Storage Junction Temperature Range –55 to +175 °C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case (Note 1) 3.9 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 45 °C/W
RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape width Quantity
FDD6612A FDD6612A D-PAK (TO-252) 13’’ 12mm 2500 units
FDU6612A FDU6612A I-PAK (TO-251) Tube N/A 75
FDD6612A/FDU6612A
FDD6612A/FDU6612A Rev. E(W)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS Drain-Source Avalanche Energy Single Pulse, VDD = 27 V, ID=10 A 51 mJ
IAR Drain-Source Avalanche Current 10 A
Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA,Referenced to 25°C25 mV/°C
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1µA
IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA
On Characteristics (Note 2)
VGS(th)Gate Threshold Voltage VDS = VGS, ID = 250 µA12.0 3V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient ID = 250 µA,Referenced to 25°C–5.1 mV/°C
RDS(on) Static Drain–Source
On–Resistance VGS = 10 V, ID = 9.5 A
VGS = 4.5 V, ID = 8 A
V
GS
= 10 V, I
D
= 9.5 A, T
J
=125°C
15
20
23
20
28
33
mΩ
gFS Forward Transconductance VDS = 5 V, ID = 9.5 A 28 S
Dynamic Characteristics
Ciss Input Capacitance 660 pF
Coss Output Capacitance 170 pF
Crss Reverse Transfer Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz 90 pF
RGGate Resistance VGS = 15 Mv, f = 1.0 MHz 2.3 Ω
Switching Characteristics (Note 2)
td(on) Turn–On Delay Time 9 18 ns
trTurn–On Rise Time 5 10 ns
td(off) Turn–Off Delay Time 24 38 ns
tfTurn–Off Fall Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω4 8 ns
QgTotal Gate Charge 6.7 9.4 nC
Qgs Gate–Source Charge 2.1 nC
Qgd Gate–Drain Charge
VDS = 15 V, ID = 9.5 A,
VGS = 5 V 2.7 nC
FDD6612A/FDU6612A
FDD6612A/FDU6612A Rev. E(W)
D
R
P
DS(ON)
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain–Source Diode Forward Current 2.3 A
VSD Drain–Source Diode Forward
Voltage VGS = 0 V, IS = 2.3 A (Note 2) 0.8 1.2 V
trr Diode Reverse Recovery Time IF = 9.5 A, diF/dt = 100 A/µs 20 nS
Qrr Diode Reverse Recovery Charge 10 nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 45°C/W when mounted on a
1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6612A/FDU6612A
FDD6612A/FDU6612A Rev. E(W)
Typical Characteristics
0
10
20
30
40
50
60
01234
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
VGS = 10V 4.5V
3.5V
3.0V
6.0V
4.0V
5.0V
0.8
1
1.2
1.4
1.6
1.8
2
010 20 30 40
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
4.5V
5.0V
10V
4.0V
6.0V
Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50 -25 025 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID = 9.5A
VGS = 10V
0.01
0.02
0.03
0.04
0.05
0.06
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
RDS(ON), ON-RESISTANCE (OHM)
ID = 5 A
TA = 125oC
TA = 25oC
Figure 3. On-Resistance Variation
withTemperature Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
60
1.5 22.5 33.5 44.5 55.5
VGS, GATE TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
TA = 125oC
-55oC
25oC
VDS = 5V
0.0001
0.001
0.01
0.1
1
10
100
00.2 0.4 0.6 0.8 11.2 1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
TA = 125oC
25oC
-55oC
Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6612A/FDU6612A
FDD6612A/FDU6612A Rev. E(W)
Typical Characteristics
0
2
4
6
8
10
0 2 4 6 8 10 12 14
Qg, GATE CHARGE (nC)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 9.5A VDS = 10V
15V
20V
0
200
400
600
800
1000
0 5 10 15 20 25 30
VDS, DRAIN TO SOURCE VOLTAGE (V)
CAPACITANCE (pF)
Coss
Crss
f = 1 MHz
VGS = 0 V
Ciss
Figure 7. Gate Charge Characteristics Figure 8. Capacitance Characteristics
0.01
0.1
1
10
100
0.01 0.1 1 10 100
VDS, DRAIN-SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
DC
10s 1s100ms
100
µ
RDS(ON) LIMIT
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
10ms
1ms
0
10
20
30
40
50
0.001 0.01 0.1 1 10 100
t1, TIME (sec)
P(pk), PEAK TRANSIENT POWER (W)
SINGLE PULSE
RθJA = 96oC/W
TA = 25oC
Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum
Power Dissipation
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 110 100 1000
t1, TIME (sec)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
RθJA(t) = r(t) * RθJA
RθJA = 96oC/W
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
P(pk)
t1t2
SINGLE PULSE
0.01
0.02
0.05
0.1
0.2
D = 0.5
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6612A/FDU6612A
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY , FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS P ATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF F AIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT ST A TUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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