2N6987 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type (NPN/PNP) V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)600m P(D) Max. (W)1.5 Minimum Operating Temp (oC) Maximum Operating Temp (oC)200o I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain. @I(C) (A) (Test Condition)1.0m @V(CE) (V) (Test Condition)10 f(T) Min. (Hz) Transition Freq200M @I(C) (A) (Test Condition) @V(CE) (V) (Test Condition) Emitter-Base Diode (Y/N) Semiconductor MaterialSilicon Package StyleTO-116