IFIERS
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECT
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
Copyright 2004
12-08-2004 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N4942 thru 1N4948
1N4942 thru 1N4948
DESCRIPTION APPEARANCE
This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/359
and is ideal for high-reliability applications where a failure cannot be tolerated.
These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass
construction using an internal “Category I” metallurgical bond. These devices are
similar in ratings to the 1N5615 thru 1N5623 series where surface mount MELF
package configurations are also available by adding a “US” suffix (see separate
data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other
rectifier products to meet higher and lower current ratings with various recovery time
speed requirements including fast and ultrafast device types in both through-hole
and surface mount packages.
“A” Package
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES APPLICATIONS / BENEFITS
• Popular JEDEC registered 1N4942 to 1N4948 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, and JANTXV available per MIL-PRF-
19500/359 (for JANS, see 1N5615 thru 1N5623)
• Surface mount equivalents also available in a square
end-cap MELF configuration with “US” suffix (see
separate data sheet for 1N5615US thru 1N5623US)
• Fast recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS MECHANICAL AND PACKAGING
• Junction & Storage Temperature: -65oC to +175oC
• Thermal Resistance: 38oC/W junction to lead at 3/8
inch (10 mm) lead length from body
• Thermal Impedance: 4.5oC/W @ 10 ms heating time
• Average Rectified Forward Current (IO): 1.0 Amps @
TA = 55ºC and 0.750 Amps at TA = 100ºC
• Forward Surge Current: 15 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
• CASE: Hermetically sealed voidless hard glass with
Tungsten slugs
• TERMINATIONS: Axial leads are copper with
Tin/Lead (Sn/Pb) finish
• MARKING: Body paint and part number, etc.
• POLARITY: Cathode band
• TAPE & REEL option: Standard per EIA-296
• WEIGHT: 340 mg
• See package dimensions on last page
ELECTRICAL CHARACTERISTICS
TYPE
WORKING
PEAK
REVERSE
VOLTAGE
VRWM
MINIMUM
BREAKDOWN
VOLTAGE
BV @ 50µA
AVERAGE
RECTIFIED
CURRENT
IO
MAXIMUM
FORWARD
VOLTAGE
VF @ 1 A
MAXIMUM
REVERSE
CURRENT
IR @ VRWM
Maximum
CAPACITANCE
C @ -12V
MAXIMUM
SURGE
CURRENT
(NOTE 1)
IFSM
MAXIMUM
REVERSE
RECOVERY
(NOTE 2)
trr
VOLTS VOLTS AMPS VOLTS µA pF AMPS ns
55oC 100oC 25oC 150oC
JAN1N4942
JAN1N4944
JAN1N4946
JAN1N4947
JAN1N4948
200
400
600
800
1000
220
440
660
880
1100
1.00
1.00
1.00
1.00
1.00
.750
.750
.750
.750
.750
1.3
1.3
1.3
1.3
1.3
1.0
1.0
1.0
1.0
1.0
200
200
200
200
200
45
35
25
20
15
15
15
15
15
15
150
150
250
250
500
NOTE 1: TA = 100oC, 8.3 ms surges NOTE 2: IF = 0.5A, IRM = 1A, IR(REC) = .250A
VOIDLESS-HERMETICALLY SEALED
FAST RECOVERY GLASS RECTIFIERS
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2
Copyright 2004
12-08-2004 REV A
WWW.Microsemi .COM
SCOTTSDALE DIVISION
1N4942 thru 1N4948
1N4942 thru 1N4948
SYMBOLS & DEFINITIONS
Symbol Definition
VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current.
VRWM Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating
temperature range.
VF Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current.
IR Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and
temperature.
C Capacitance: The capacitance of the TVS as defined @ 12 volts at a frequency of 1 MHz and stated in
picofarads.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when
changing from the forward direction to the reverse direction and a specified recovery decay point after a peak
reverse current is reached.
PACKAGE DIMENSIONS
NOTE: Lead diameter tolerance = +0.003/-0.004 inches