MITSUBISHI LASER DIODES
ML9XX11 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
TYPE
NAME
DESCRIPTION
ML9XX11series are DFB (Distributed Feedback) laser
diodes emitting light beam around 1550nm.
They are well suited for light source in long
distance digital transmission system.
They are hermetically sealed devices with the photo
diode for optical output monitoring.
APPLICATION
· ~1.25Gbps digital transmission system
FEATURES
· Homogeneous grating (AR/HR facet coating) structure
DFB
·
Wide temperature range operation ( -40 to 85ºC )
· Low threshold current (typical 8mA)
· High speed response (typical 0.1nsec)
· φ5.6mm TO-CAN package
·
Flat window cap, Ball lens cap, or Aspherical lens cap
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Conditions Ratings Unit
Po Light output power CW 10 mW
If Forward current (Laser diode) --- 150 mA
V
RL
Reverse voltage (Laser diode) --- 2 V
V
RD
Reverse voltage (Photo diode) --- 20 V
I
FD
Forward current (Photo diode) --- 2 mA
Tc Case temperature --- -40 to +85
ºC
Tstg Storage temperature --- -40 to +100
ºC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Flat window cap ; ML925B11F / ML920J11S ]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 8 15 Ith Threshold current
CW, Tc=85
ºC
--- 30 50 mA
CW, Po=5mW --- 25 40 Iop Operation current
CW, Po=5mW, Tc=85
ºC
--- 60 80 mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA
λp Peak wavelength CW, Po=5mW 1530 1550 1570 nm
θ // Beam divergence angle (parallel) CW, Po=5mW --- 25 35 deg.
θ
┴
Beam divergence angle
(perpendicular) CW, Po=5mW --- 35 45 deg.
SMSR Side mode suppression ratio CW, Po=5mW
Tc= - 40 to +85
ºC
35 40 --- dB
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 µA
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
ML925B11F / ML920J11S
ML925AA11F / ML920AA11S
ML925J11F / ML920L11S
MITSUBISHI LASER DIODES
ML9XX11 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[Ball lens cap ; ML925AA11F / ML920AA11S ]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 8 15 Ith Threshold current
CW, Tc=85
ºC
--- 30 50 mA
CW, Po=5mW --- 25 40 Iop Operation current
CW, Po=5mW, Tc=85
ºC
--- 60 80 mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA
λp Peak wavelength CW, Po=5mW 1530 1550 1570 nm
SMSR Side mode suppression ratio CW, Po=5mW
Tc= - 40 to +85
ºC
35 40 --- dB
Pf Fiber coupling power CW, Po=5mW, SMF 0.5 1.0 --- mW
Df Focul length CW, Po=5mW, SMF 6.0 6.5 7.0 mm
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 µA
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified)
[ Aspherical lens cap ; ML925J11F / ML920L11S]
Symbol Parameter Test conditions Min. Typ. Max. Unit
CW --- 8 15 Ith Threshold current
CW, Tc=85
ºC
--- 30 50 mA
CW, Po=5mW --- 25 40 Iop Operation current
CW, Po=5mW, Tc=85
ºC
--- 60 80 mA
Vop Operating voltage CW, Po=5mW --- 1.1 1.5 V
η Slope efficiency CW, Po=5mW 0.20 0.28 --- mW/mA
λp Peak wavelength CW, Po=5mW 1530 1550 1570 nm
SMSR Side mode suppression ratio CW, Po=5mW
Tc= - 40 to +85
ºC
35 40 --- dB
Pf Fiber coupling power CW, Po=5mW, SMF 1.5 2.0 --- mW
Df Focul length CW, Po=5mW, SMF 6.5 7.5 8.5 mm
tr,tf Rise and Fall time Ib=Ith, 20-80% <*> --- 0.1 0.2 ns
Im Monitoring output current (PD) CW, Po=5mW 0.05 0.2 --- mA
Id Dark current (PD) V
RD
=5V --- --- 0.1 µA
Ct Capacitance (PD) V
RD
=5V --- 10 20 pF
<*> Except influence of the 18mm lead.
MITSUBISHI LASER DIODES
ML9XX11 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
ML925AA11F
ML920A
A
11S
Dimension : m
m
(1)
φ2.0
±0.01
φ3.55
±0.1
φ5.6
-0.03
1.27
18
±1
3.87
±0.1
1.2
4-φ0.45
±0.05
(2)
Ｘ
1
±0.1
2-90°
Ｙ
φ2.0
±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(3.0)
(6.7)
±0.03
(Dimension:mm)
ML925AA11F
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
Pin Connection
( Top view )
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
ML920AA11S
ML925B11F
ML920J11S
Dimension : m
m
(1)
φ1.0Min.
φ2.0Min.
φ3.5 5±0. 1
φ5.6
+0
-0.03
1.27
±0.0 3
0.25
±0.03
18
±1
2.1
±0.1 5
1.2
±0.1
4-φ0.45
±0.05
(2)
Ｘ
1
±0.1
2-90°
Ｙ
φ2.0
±0.25
(P.C.D.)
φ4.25
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
(Glass)
ML925B11F
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
Pin Connection
( Top view )
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
ML920J11S
MITSUBISHI LASER DIODES
ML9XX11 SERIES
Notice : Some parametric limits are subject to change
InGaAsP DFB LASER DIODES
Dec. 2004
MITSUBISHI
ELECTRIC
OUTLINE DRAWINGS
(1)
φ3.75±0.1
φ5.6
+0
-0.03
1.27
±0.03
18
±1
3.97
±0.15
1.2
±0.1
4-φ0.45
±0.05
(2)
Ｘ
1±0.1
2-90°
Ｙ
φ2.0
±0.25
(P.C.D.)
φ4.3
(3)
(4)
(0.25)
(0.25)
Reference Plane
Emitting Facet
(1) (2)
Ｚ
Top View
(7.51)
ML925J11F
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
Pin Connectio n
( To p view )
Case
(1)
(1)(1)
(1) (2)
(2)(2)
(2)
(3)
(3)(3)
(3)
(4)
(4)(4)
(4)
PD
LD
ML920L11S
ML925J11F
ML920L11S
Dimension : m
m
