All published data at TCASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 1 of 13 Rev. 03, 2011-03-14
30
40
50
60
70
19 0
19.5
20.0
20.5
21.0
Efficiency (%)
Gain (dB)
Power Sweep, CW
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
Gain
10
20
30
40
50
60
70
18.0
18.5
19.0
19.5
20.0
20.5
21.0
41 43 45 47 49 51 53
Drain Eff iciency ( %)
Gain (dB)
Output Power (dBm)
Power Sweep, CW
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
Efficiency
Gain
Thermally-Enhanced High Power RF LDMOS FET
160 W, 28 V, 920 – 960 MHz
Description
The PTFB091507FH is an LDMOS FET intended for use in multi-
standard cellular power amplifi er applications in the 920 to 960 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless fl ange. Manufactured
with Infi neon’s advanced LDMOS process, this device provides excel-
lent thermal performance and superior reliability.
PTFB091507FH
Package H-34288-4/2
Features
• Broadband internal matching
• Wide video bandwidth
• Typical CW performance, 960 MHz, 28 V
- Average output power = 160 W
- Gain = 19.5 dB
- Effi ciency = 60%
• Integrated ESD protection
• Low thermal resistance
• Thermally enhanced package is Pb-free and RoHS
compliant
• Capable of handling 10:1 VSWR @ 28 V, 160 W
(CW) output power
RF Characteristics
Single-carrier WCDMA Specifi cations (not subject to production test; verifi ed by design/characterization in Infi neon test fi xture)
VDD = 28 V, IDQ = 1.2 A, POUT = 50 W average
ƒ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, PAR = 7.5 dB @ 0.01% CCDF probability
Characteristic Symbol Min Typ Max Unit
Gain Gps — 20 — dB
Drain Efficiency ηD — 38 — %
Adjacent Channel Power Ratio ACPR — –36 — dBc
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 2 of 13 Rev. 03, 2011-03-14
Two-tone Measurements (tested in Infi neon test fi xture)
VDD = 28 V, IDQ = 1.2 A, POUT = 70 W avg, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic Symbol Min Typ Max Unit
Gain Gps 19.5 20 — dB
Drain Efficiency D 43.5 45 — %
Intermodulation Distortion IMD — –30 –28 dBc
DC Characteristics
Characteristic Conditions Symbol Min Typ Max Unit
Drain-Source Breakdown Voltage VGS = 0 V, IDS = 10 mA V(BR)DSS 65 — — V
Drain Leakage Current VDS = 28 V, VGS = 0 V IDSS — — 1.0 µA
V
DS = 63 V, VGS = 0 V IDSS — — 1.0 µA
On-State Resistance VGS = 10 V, VDS = 0.1 V RDS(on) — 0.05 — Ω
Operating Gate Voltage VDS = 28 V, IDQ = 1.2 A VGS 2.5 3.9 4.5 V
Gate Leakage Current VGS = 10 V, VDS = 0 V IGSS — — 1.0 µA
Maximum Ratings
Parameter Symbol Value Unit
Drain-Source Voltage VDSS 65 V
Gate-Source Voltage VGS –6 to +10 V
Junction Temperature TJ 200 °C
Storage Temperature Range TSTG –40 to +150 °C
Thermal Resistance (TCASE = 70°C) RθJC 0.31 °C/W
Ordering Information
Type and Version Package Outline Package Description Shipping
PTFB091507FH V1 H-34288-4/2 Ceramic open-cavity, earless fl ange Tray
PTFB091507FH V1 R250 H-34288-4/2 Ceramic open-cavity, earless fl ange Tape & Reel, 250 pcs
RF Characteristics (cont.)
Data Sheet – DRAFT ONLY 3 of 13 Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
25
30
35
40
45
50
-40
-30
-20
n
Efficiency (%)
IMD (dBc)
Two-tone Drive-up
VDD = 28 V, IDQ = 2.4 A,
ƒ1= 960 MHz , ƒ2= 959 MHz
Efficiency
10
15
20
25
30
35
40
45
50
-60
-50
-40
-30
-20
38 40 42 44 46 48 50
Drain Efficiency (%)
IMD (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up
VDD = 28 V, IDQ = 2.4 A,
ƒ1= 960 MHz , ƒ2= 959 MHz
Efficiency
IMD 3rd Order
-40
-30
-20
O
rder IMB (dBc)
Two-tone Drive-up at
Selected F requ en cie s
VDD = 28 V, IDQ = 1.2 A, tone spacing = 1 MHz
960 MHz
940 MHz
920 MHz
-60
-50
-40
-30
-20
42 44 46 48 50 52
3rd Order IMB (dBc)
Output Power, PEP (dBm)
Two-tone Drive-up at
Selected F requ en cie s
VDD = 28 V, IDQ = 1.2 A, tone spacing = 1 MHz
960 MHz
940 MHz
920 MHz
-30
-20
-10
0
30
40
50
60
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Freq uency
VDD = 28 V, IDQ = 1.2 A, POUT = 63 W
Efficiency
In
p
ut Return Loss
IMD3
o
ss (dB) / IM D (dBc)
)
/ Efficiency (%)
-50
-40
-30
-20
-10
0
10
20
30
40
50
60
840 890 940 990 1040
Frequency (M Hz )
Two-tone Broadband
Gain, Efficiency & Return Loss
vs. Freq uency
VDD = 28 V, IDQ = 1.2 A, POUT = 63 W
Gain
Efficiency
In
p
ut Return Loss
IMD3
Return Loss (dB) / IM D (dBc)
Gain (dB) / Efficiency (%)
30
40
50
20.0
20.5
21.0
n Efficiency (%)
Gain (dB)
Two-tone Drive-up
VDD = 28 V, IDQ = 1.2 A,
ƒ1= 960 MHz , ƒ2= 959 MH z
Effi i
Gain
10
20
30
40
50
19.0
19.5
20.0
20.5
21.0
38 40 42 44 46 48 50
Drain Effi ciency (% )
Gain (dB)
Output Power, PEP (dBm)
Two-tone Drive-up
VDD = 28 V, IDQ = 1.2 A,
ƒ1= 960 MHz , ƒ2= 959 MH z
Efficiency
Gain
Typical Performance (data taken in Infi neon test fi xture)
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 4 of 13 Rev. 03, 2011-03-14
-45
-35
-25
rder IMB (dBc)
Intermodulation Distortion
VDD = 28 V, IDQ = 1.2 A,,
ƒ1= 960 MH z , ƒ2= 959 MHz
3rd Order
5th
7th
-65
-55
-45
-35
-25
41 43 45 47 49 51 53
3rd Order IMB (dBc)
Output Power, PEP (dBm)
Intermodulation Distortion
VDD = 28 V, IDQ = 1.2 A,,
ƒ1= 960 MH z , ƒ2= 959 MHz
3rd Order
5th
7th
30
40
50
-35
-25
-15
Efficiency (%)
A
CP (dBc)
Single-carrier WCDM A 3GPP Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 M H z,
3GPP WCDMA si gn al,
PAR = 7.5:1, BW = 3.84 MHz
Efficiency
10
20
30
40
50
-55
-45
-35
-25
-15
42 44 46 48 50
Drain Efficiency (%)
ACP (dBc)
Average Output Pow er (dBm)
Single-carrier WCDM A 3GPP Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 M H z,
3GPP WCDMA si gn al,
PAR = 7.5:1, BW = 3.84 MHz
ACP U
p
Efficiency
ACP Low
30
45
60
-20
0
20
c
y (%) / Gain (dB)
d
B) / ACPR (dBc)
Single-carrier W CDM A Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCD MA signal ,
PAR = 7.5:1, BW = 3.84 M Hz
PAR*
Efficienc
y
0
15
30
45
60
-60
-40
-20
0
20
42 44 46 48 50
Efficiency (%) / Gain (dB)
PAR (dB) / ACPR (dBc)
Aver age O utput Pow er (dB m)
Single-carrier W CDM A Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCD MA signal ,
PAR = 7.5:1, BW = 3.84 M Hz
ACPR
PAR*
Efficienc
y
Gain
4
6
8
-20
0
20
PAR (dB)
A
CPR (dBc)
Single-carrier WCDM A Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
PAR*
0
2
4
6
8
-60
-40
-20
0
20
42 44 46 48 50
PAR (dB)
ACPR (dBc)
Average Output Power (dBm)
Single-carrier WCDM A Drive-up
960 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 MHz
ACPR
PAR*
Typical Performance (cont.)
*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve
Data Sheet – DRAFT ONLY 5 of 13 Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
30
45
60
-20
0
20
n
cy (%) / Gain (dB)
(
dB) / ACPR (dBc)
Single-carrier WCDM A Drive-up
920 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 M Hz
PAR*
Efficienc
y
0
15
30
45
60
-60
-40
-20
0
20
42 44 46 48 50
Efficiency (%) / Gain (dB)
PAR (dB) / ACPR (dBc)
Average Output Power (dBm)
Single-carrier WCDM A Drive-up
920 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDMA signal,
PAR = 7.5:1, BW = 3.84 M Hz
ACPR
PAR*
Efficienc
y
Gain
30
45
60
-20
0
20
c
y (%) / Gain (dB)
dB) / ACPR (dBc)
Single-carrier WCDMA Drive-up
940 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 M H z,
3GPP WCDM A signal,
PAR = 7.5:1, BW = 3.84 M H z
PAR*
Efficienc
y
0
15
30
45
60
-60
-40
-20
0
20
42 44 46 48 50
Efficiency (%) / Gain (dB)
PAR (dB) / ACPR (dBc)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
940 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 M H z,
3GPP WCDM A signal,
PAR = 7.5:1, BW = 3.84 M H z
ACPR
PAR*
Efficienc
y
Gain
4
6
8
-20
0
20
PAR (dB)
A
CPR (dBc)
Single-carrier WCDM A Drive-up
940 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MH z ,
3GPP WCDM A signal,
PAR = 7.5:1, BW = 3.84 M Hz
PAR*
0
2
4
6
8
-60
-40
-20
0
20
42 44 46 48 50
PAR (dB)
ACPR (dBc)
Average Output Power (dBm)
Single-carrier WCDM A Drive-up
940 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MH z ,
3GPP WCDM A signal,
PAR = 7.5:1, BW = 3.84 M Hz
ACPR
PAR*
4
6
8
-20
0
20
PAR (dB)
A
CPR (dBc)
Single-carrier WCDM A Drive-up
920 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDM A signal,
PAR = 7.5:1, BW = 3.84 M Hz
PAR*
0
2
4
6
8
-60
-40
-20
0
20
42 44 46 48 50
PAR (dB)
ACPR (dBc)
Average Output Power (dBm)
Single-carrier WCDM A Drive-up
920 MHz
VDD = 28 V, IDQ = 1.2 A, ƒ = 960 MHz,
3GPP WCDM A signal,
PAR = 7.5:1, BW = 3.84 M Hz
ACPR
PAR*
Typical Performance (cont.)
*Peak-to-average ratio (PAR) compression at 0.01% probability on CCDF curve
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 6 of 13 Rev. 03, 2011-03-14
Z S o urce Z Load
G
S
D
Broadband Circuit Impedance
Frequency Z source (W) Z Load (W)
MHz R jX R jX
910 2.23 -3.12 1.53 -0.87
920 2.23 -3.03 1.52 -0.84
930 2.23 -2.95 1.50 -0.81
940 2.24 -2.87 1.49 -0.77
950 2.25 -2.80 1.46 -0.74
960 2.26 -2.73 1.44 -0.71
970 2.27 -2.65 1.42 -0.67
See next page for Reference Circuit information
Data Sheet – DRAFT ONLY 7 of 13 Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
Reference Circuit
TL142
TL140
TL141
TL105
TL104
TL107
TL108
C101
33 pF
12
3
TL110
12
3
TL111 TL112
TL113
TL114
TL115
TL116
TL117
TL118
TL119
TL120
TL121
TL122
TL123
TL124
TL125
TL126
TL127
TL103
TL106
TL138
1
2
3
TL139
C108
1.5 pF
C803
1000 pF
R801
1300 Ohm
R802
1200 Ohm
R803
10 Ohm
R804
2000 Ohm
R805
10 Ohm
TL128
TL129
12
3
TL130
R101
10 Ohm
12
3
TL131
12
3
TL132
12
3
TL133
12
3
TL109
C802
100000 pF
C801
1000 pF
TL102
12
3
TL101
C109
10000 pF
C110
4.7 pF
TL134
R102
5100 Ohm
C102
4710000 pF
C103
10000 pF
C104
56 pF
1
2
3
TL135
TL136
R103
10 Ohm
C105
3.3 pF
12
3
TL137
C106
3.9 pF
C107
56 pF
PORT
3
PORT
2
PORT
1
1
2
3
S2
S
C
B
E
1
2
3
4
S1
1
2
34
5
6
78
S3 C804
1000 pF
C805
100000 pF
b0 915 07 f h_B D in_ 2 - 2 8- 11
GATE DUT
VDD
RF_IN
1
2
3
TL205
C205
56 pF
TL204
C223
10000000 pF
C207
0.2 pF
TL229
TL230
TL231
TL232
TL233
TL236
TL237 TL217
TL218
TL219
TL221
TL222
1
2
3
4
TL223 TL224 TL225
TL226 TL227
C209
5.6 pF
C215
1 pF
C210
1 pF
TL209
TL208
TL210
12
3
TL211
1
2
3
TL238
12
3
TL239
12
3
TL240
1
2
3
TL228
C204
10000 pF
C213
100000000 pF
C220
10000000 pF
C211
10000000 pF
C217
10000000 pF
C212
10000000 pF
C214
10000 pF
1
2
3
4
TL207 TL234
C201
100000000 pF
12
3
TL220
C222
10000000 pF
C208
10000000 pF
12
3
TL203
C216
1000000 pF
C221
10000000 pF
C206
10000000 pF
C202
1.2 pF
12
3
TL235
C203
3.9 pF
1
2
3
TL201
PORT
5
PORT
2
PORT
4
PORT
1
12
3
TL214
12
3
TL215
12
3
TL213
12
3
TL206 TL212 TL216
1
2
3
4
TL202 C219
10000000 pF
C218
1000000 pF
b 09 150 7fh _B D out _2- 2 8-1 1
DRAIN DUT
DRAIN DUT
DRAIN DUT
DRAIN DUT
ε= 3.48
H = 20 mil
RO/RO4350B1
r
ε= 3.48
H = 20 mil
RO/RO4350B1
r
Reference circuit input schematic for ƒ = 960 MHz
Reference circuit output schematic for ƒ = 960 MHz
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 8 of 13 Rev. 03, 2011-03-14
Reference Circuit (cont.)
DUT PTFB091507FH
Test Fixture Part No. LTN/PTFB091507FH
PCB Rogers RO4350, 0.508 mm [0.020"] thick, 2 oz. copper, r = 3.48
Gerber Files Find Gerber fi les for this test fi xture on the Infi neon Web site at www.infi neon.com/rfpower
ELectrical Characteristics at 960 MHz
Microstrip Characteristics Dimensions: mm Dimensions: mils
TL102 0.004 , 26.8 W = 2.79, L = 0.76 W = 110, L = 30
TL103 0.007 , 39.1 W = 1.68, L = 1.27 W = 66, L = 50
TL111 0.004 , 5.3 W1 = 17.78, W2 = 17.78, W3 = 0.76 W1 = 700, W2 = 700, W3 = 30
TL114 0.003 , 63.9 W = 0.76, L = 0.51 W = 30, L = 20
TL115 0.026 , 51.5 W = 1.10, L = 4.88 W = 44, L = 192
TL116 0.036 , 39.1 W = 1.68, L = 6.74 W = 66, L = 266
TL117 0.042 , 51.5 W = 1.10, L = 8.00 W = 44, L = 315
TL118 0.007 , 63.9 W = 0.76, L = 1.27 W = 30, L = 50
TL119 0.035 , 39.1 W = 1.68, L = 6.49 W = 66, L = 256
TL120 0.015 , 63.9 W = 0.76, L = 2.92 W = 30, L = 115
TL121 0.100 , 63.9 W = 0.76, L = 19.05 W = 30, L = 750
TL122 0.005 , 51.5 W = 1.10, L = 1.02 W = 44, L = 40
TL123 0.008 , 63.9 W = 0.76, L = 1.52 W = 30, L = 60
TL124 0.006 , 26.8 W = 2.79, L = 1.04 W = 110, L = 41
TL125 0.102 , 5.3 W = 17.78, L = 17.55 W = 700, L = 691
TL126 0.040 , 51.5 W = 1.10, L = 7.57 W = 44, L = 298
TL127 0.004 , 26.8 W = 2.79, L = 0.76 W = 110, L = 30
TL130 0.011 , 39.1 W1 = 1.68, W2 = 1.68, W3 = 2.03 W1 = 66, W2 = 66, W3 = 80
TL134 0.007 , 26.8 W = 2.79, L = 1.19 W = 110, L = 47
TL136 0.008 , 63.9 W = 0.76, L = 1.52 W = 30, L = 60
TL137 0.016
, 5.3 W1 = 17.78, W2 = 17.78, W3 = 2.79 W1 = 700, W2 = 700, W3 = 110
TL138 0.002 , 51.5 W = 1.10, L = 0.33 W = 44, L = 13
TL139 0.015 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 2.79 W1 = 44, W2 = 44, W3 = 110
TL201 0.004 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 0.76 W1 = 44, W2 = 44, W3 = 30
TL202, 207 0.010 , 20.9 W1 = 3.81, W2 = 1.83, W3 = 3.81, W1 = 150, W2 = 72, W3 = 150, W4 = 72
W4 = 1.83
TL203 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110
TL204 0.014 , 51.5 W = 1.10, L = 2.67 W = 44, L = 105
TL205 0.015 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 2.79 W1 = 44, W2 = 44, W3 = 110
TL206 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110
TL210 0.109 , 5.7 W = 16.51, L = 18.62 W = 650, L = 733
TL211 0.016 , 5.7 W1 = 16.51, W2 = 16.51, W3 = 2.79 W1 = 650, W2 = 650, W3 = 110
TL212 0.014 , 20.9 W = 3.81, L = 2.51 W = 150, L = 99
TL213 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110
TL214 0.007 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 1.27 W1 = 150, W2 = 150, W3 = 50
table continued on next page
Data Sheet – DRAFT ONLY 9 of 13 Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
TL215 0.021 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 3.81 W1 = 150, W2 = 150, W3 = 150
TL216 0.041 , 20.9 W = 3.81, L = 7.29 W = 150, L = 287
TL217 0.008 , 39.1 W = 1.68, L = 1.52 W = 66, L = 60
TL218 0.016 , 16.5 W = 5.08, L = 2.90 W = 200, L = 114
TL219 0.011 , 39.1 W = 1.68, L = 2.03 W = 66, L = 80
TL220 0.016 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 2.79 W1 = 150, W2 = 150, W3 = 110
TL221 0.037 , 5.7 W = 16.51, L = 6.38 W = 650, L = 251
TL222 0.016 , 16.5 W = 5.08, L = 2.89 W = 200, L = 114
TL223 0.011 , 5.7 W1 = 16.51, W2 = 1.83, W3 = 16.51, W1 = W1, W2 = 72, W3 = 650,
W4 = 1.83 W4 = 72
TL228 0.021 , 16.5 W1 = 5.08, W2 = 5.08, W3 = 3.81 W1 = 200, W2 = 200, W3 = 150
TL230 0.006 , 51.5 W = 1.10, L = 1.14 W = 44, L = 45
TL231 0.060 , 51.5 W = 1.10, L = 11.3 W = 44, L = 445
TL232 0.027 , 51.5 W = 1.10, L = 5.08 W = 44, L = 200
TL233 0.006 , 51.5 W = 1.10, L = 1.12 W = 44, L = 44
TL234 0.041 , 20.9 W = 3.81, L = 7.29 W = 150, L = 287
TL235 0.010 , 51.5 W1 = 1.10, W2 = 1.10, W3 = 1.91 W1 = 44, W2 = 44, W3 = 75
TL236 0.014 , 20.9 W = 3.81, L = 2.51 W = 150, L = 99
TL237 0.052 , 5.7 W = 16.51, L = 8.89 W = 650, L = 350
TL238 0.021 , 16.5 W1 = 5.08, W2 = 5.08, W3 = 3.81 W1 = 200, W2 = 200, W3 = 150
TL239 0.021 , 20.9 W1 = 3.81, W2 = 3.81, W3 = 3.81 W1 = 150, W2 = 150, W3 = 150
TL240 0.007 l, 20.9 W W1 = 3.81, W2 = 3.81, W3 = 1.27 W1 = 150, W2 = 150, W3 = 50
Reference Circuit (cont.)
Microstrip Characteristics Dimensions: mm Dimensions: mils
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 10 of 13 Rev. 03, 2011-03-14
R803
RF_IN
C208 C201
C214
C216
C215
C102
C804 R801
R805
C803
S3
C805
C222
22
HH D
4V6
C221
C206
C205
C109
C202
C801
22
HHD
4V6
C105
C212
C106
C204
C211
C219
C108
R103
C101
C107
C210 C200
C203
C207
C218
C213
C217 C220
C110
R102
C104 C103
RF_OUT
PTFB091507_IN_01 R04350, .020 (62) PTFB091507_IN_01 R04350, .020 (62)
V
DD
V
DD
S1
C802
b 091507 fh _C D_ 3- 08 - 11
C223
Reference circuit board layout (not to scale)
Component Description Suggested Supplier P/N or Comment
C101 Chip capacitor, 33 pF ATC ATC100B330JW500XB
C102 Chip capacitor, 4.71 µF Digi-Key 493-2372-2-ND
C103 Capacitor, 10 nF ATC ATC200B103MW50XC
C104, C107 Chip capacitor, 56 pF ATC ATC100B560JW500XB
C105 Chip capacitor, 3.3 pF ATC ATC100B3R3CW500XB
C106, C203 Chip capacitor, 3.9 pF ATC ATC100B3R9CW500XB
C108 Chip capacitor, 1.5 pF ATC ATC100B1R5CW500XB
C109 Capacitor, 10 nF ATC ATC200B103MW50XC
C110 Chip capacitor, 4.7 pF ATC ATC100B4R7CW500XB
C201, C213 Electrolytic cap., 100 uF, 50 V Digi-Key PCE4442TR-ND
C202 Chip capacitor, 1.2 pF ATC ATC100B1R2CW500XB
C204 Capacitor, 10 nF ATC ATC200B103MW50XC
C205 Chip capacitor, 56 pF ATC ATC100B560JW500XB
C206, C208, C211, Capacitor, 10 µF Digi-Key 587-1818-2-ND
C212, C217, C220,
C221, C222
C207 Chip capacitor, 0.2 pF ATC ATC100B0R2CW500XB
C209 Chip capacitor, 5.6 pF ATC ATC100B5R6CW500XB
C210 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB
table continued on next page
Reference Circuit (cont.)
Data Sheet – DRAFT ONLY 11 of 13 Rev. 03, 2011-03-14
PTFB091507FH
Confidential, Limited Internal Distribution
C214 Capacitor, 10 nF ATC ATC200B103MW50XC
C215 Chip capacitor, 1 pF ATC ATC100B1R0CW500XB
C216, C218 Chip capacitor, 1 µF Digi-Key 478-3993-2-ND
C219, C223 Tantalum capacitor, 10 µF, 35 V Garrett Electronics 281M5002106K
C801, C803, C804 Chip capacitor, 1 nF Digi-Key PCC1772CT-ND
C802, 805 Chip capacitor, 100 nF Digi-Key PCC104BCT-ND
R101 Resistor, 10 Digi-Key P10ECT-ND
R102 Resistor, 5.1 Digi-Key P5.1KECT-ND
R103 Resistor, 10 Digi-Key P10ECT-ND
R801 Resistor, 1.3k Digi-Key P1.3KGCT-ND
R802 Resistor, 1.2k Digi-Key P1.2KGCT-ND
R803, R805 Resistor, 10 Digi-Key P10ECT-ND
R804 Resistor, 2k Digi-Key P2.0KECT-ND
S1 Transistor Digi-Key BCP5616-ND
S2 Potentiometer, 2k Digi-Key 3224W-202ECT-ND
S3 Voltage regulator Digi-Key LM78L05ACM-ND
Reference Circuit (cont.)
Component Description Suggested Supplier P/N or Comment
See package outline specifi cations on next page
PTFB091507FH
Confidential, Limited Internal Distribution
Data Sheet – DRAFT ONLY 12 of 13 Rev. 03, 2011-03-14
Package Outline Specifi cations
Package H-34288-4/2
Diagram Notes—unless otherwise specifi ed:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ±0.127 [.005] unless specifi ed otherwise.
4. Pins: D - drain; S - source; G - gate; V - VDD.
5. Lead thickness: 0.10 +0.051/–0.025 mm [.004 +0.002/–0.001 inch].
6. Gold plating thickness: 0.25 micron [10 microinch] max.
Find the latest and most complete information about products and packaging at the Infi neon Internet page
http://www.infi neon.com/rfpower
L
C
D
G
C
L19.558±.510
[.770±.020]
2X 12.700
[. 500]
45° X 2.032
[45° X .080]
2X 1.143
[.045]
9.398
[.370]
9.779
[. 385]
23.114
[.910]
1.016
[.040]
1.575
[.062] (SPH)
22.352±.200
[.880±.008]
4.039+.254
-.127
[.159+.010
-.005 ]
22.860
[.900]
2X 5.080
[.200]
4.889±.510
[.192±.020]
VV
S
2X 30°
C 66065-A0003-C743-01-0027 H-34288- 4_2.dwg
L
C
4X R0. 508+.381
-.127
[R.020+.015
-.005 ]
Data Sheet – DRAFT ONLY 13 of 13 Rev. 03, 2011-03-14
Edition 2011-03-14
Published by
Infi neon Technologies AG
81726 Munich, Germany
© 2010 Infi neon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infi neon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infi neon Technologies Offi ce (www.infi neon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infi neon Technologies Offi ce.
Infi neon Technologies components may be used in life-support devices or systems only with the express written approval of In-
fi neon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device
or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infi neon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
PTFB091507FH V1
Confidential, Limited Internal Distribution
Page Subjects (major changes since last revision)
Revision History: 2011-03-14 Data Sheet
Previous Revision: 2010-09-02, Advance Specifi cation
all Characterization completed, product released.
