A Microsemi Company 580 PLEASANT ST. WATERTOWN, MA 02172 PHONE: (617) 924-9280 FAX: (617) 924-1235 MIL -S-19500/608 Features * * * * * * * * * 1N6660 1N6660R Low Reverse Leakage Low Forward Voltage Drop Guard Ring for Overvoltage Protection Isolated Hermetically Sealed Power Package Ceramic Seals for Improved Hermeticity Custom Lead Forming Available Eutectic Die Attach 150C Operating Temperature Space Level Screening Available Available in TO-254Z Packaging 30 Amp / 45 VOLTS COMMON CATHODE OR COMMON ANODE SCHOTTKY RECTIFIER Maximum Ratings (per diode) TO-254 * Peak Repetitive Reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Average Forward Current, 25 C VRWM VRRM VR IO Peak Surge Forward Current @ tp = 8.3 ms, half sinewave, Io = 0; VRM = 0 Peak Reverse Surge Current @ tp = 30s, VRSM = 54 V min, L = 260 H Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Operating Junction Temperature IFSM 45 V 45 V 45 V 15 A Note 1 300 Apk IRRM 2A Rjc Rja 1.65 C/W 40C/W Tj -65C to 150C -65C to 150C Storage Temperature Electrical Characteristics Parameter Symbol Maximum Instantaneous Forward Voltage VF Maximum DC Reverse Current At Rated DC Blocking Voltage Junction Capacitance IR Cj Tstg per diode @ 25C Unless Otherwise Specified Typical MA 0.55V 0.75V 1.0V 0.80V 50 A 1 mA 40 mA 2000 pF Test Conditions IF = 5 A; TJ = 25C* IF = 15 A; TJ = 25C* IF = 30 A; TJ = 25C* IF = 15 A; TJ =- 55C* TJ = 25C TJ = 125C VR = 5 V, f = 1 MHz *Pulse test: Pulse width 300 sec, Duty cycle 2% Note: 1. Derate linearly @ 300mA/ C from T J = TC = + 100C to 150C MSC0268A.DOC REVISED: 05-01-97