LL4151
www.vishay.com Vishay Semiconductors
Rev. 1.8, 14-Jul-17 1Document Number: 85559
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
DESIGN SUPPORT TOOLS click logo to get started
MECHANICAL DATA
Case: MiniMELF (SOD-80)
Weight: approx. 31 mg
Cathode band color: black
Packaging codes / options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/2.5 per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon epitaxial planar diodes
• Electrical data identical with the device 1N4151
• AEC-Q101 qualified
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Extreme fast switches
Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
LL4151 LL4151-GS18 or LL4151-GS08 - Single Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage VRRM 75 V
Reverse voltage VR50 V
Peak forward surge current tp = 1 μs IFSM 2A
Repetitive peak forward current IFRM 500 mA
Forward continuous current IF300 mA
Average forward current VR = 0 IF(AV) 150 mA
Power dissipation Ptot 500 mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air On PC board
50 mm x 50 mm x 1.6 mm RthJA 500 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg -65 to +175 °C
LL4151
www.vishay.com Vishay Semiconductors
Rev. 1.8, 14-Jul-17 2Document Number: 85559
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Diode Capacitance vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF0.880 1 V
Reverse current VR = 50 V IR50 nA
VR = 50 V, Tj = 150 °C IR50 μA
Breakdown voltage IR = 5 μA, tp/T = 0.01,
tp = 0.3 ms V(BR) 75 V
Diode capacitance VR = 0, f = 1 MHz,
VHF = 50 mV CD2pF
Reverse recovery time
IF = IR = 10 mA,
iR = 1 mA trr 4ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ωtrr 2ns
0 40 80 120 160
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
Tj- Junction Temperature (°C)
200
94 9151
VR=50V
Scattering Limit
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V - Forward Voltage (V)
2.0
94 9152 F
T = 25 °C
j
T = 100 °C
j
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C - Diode Capacitance (pF)
D
VR- Reverse Voltage (V)
100
94 9153
2.5 f=1MHz
Tj= 25 °C
LL4151
www.vishay.com Vishay Semiconductors
Rev. 1.8, 14-Jul-17 3Document Number: 85559
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): MiniMELF (SOD-80)
Cathode indentification
0.47 (0.019) max.
2.5 (0.098) max. 1.25 (0.49) min.
3.7 (0.146)
3.3 (0.130)
5 (0.197) ref.
2 (0.079) min.
1.6 (0.063)
1.4 (0.055)
Foot print recommendation:
*
* The gap between plug and glass can
be either on cathode or anode side
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
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Revision: 08-Feb-17 1Document Number: 91000
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