High-Speed Analo
N-Channel DMOS FETs
SD211 / SD213 / SD215
FEATURES
•• High I npu t to Output Isol ati on . . . . . . . . . . . . . . . . 120dB
•• Lo w On Re sist ance . . . . . . . . . . . . . . . . . . . . . . . . 30 O hm
•• Lo w Feedt hr ou g h and Fe edba ck Transi en ts
•• Low Capacitan ce:
–Input (Gate). . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4p F typ.
–Output. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.3pF typ.
–Feedba ck . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0. 3pF ty p.
•• Buil t-in Pr otect i on Diode f ro m Gate to Subs trate
APPLICATIONS
SD211:
•• Analog Switch Driver
SD213 and SD215:
•• An a lo g Sw it ch e s
•• High- Spe ed Digi tal Swit ches
•• Multiplexers
•• A to D Converters
•• D to A Converters
•• Choppers
•• Sampl e & Hol d
DESCRIPTION
The Calogi c SD211 is a 30V analog switch driver with built-in
protection diode from gate to substrate The SD211 is used
with SD213 and SD215 DM OS analog s w itches.
ORDERING INFORMATION
Part Package Temperature Range
SD211DEHermetic TO-72 Package-55oC to +125oC
XSD211Sorted Chips in Carriers-55oC to +125oC
SD213D E Herm etic T O -72 Pac kage -55oC to +125oC
XSD213 Sort ed Chips in Car rier s -55oC to +125oC
SD215D E Herm etic T O -72 Pac kage -55oC to +125oC
XSD215 Sort ed Chips in Car rier s -55oC to +125oC
LLC
SCHEMATIC DI AGRAM (Top View)
CALOGIC LLC, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-1076 DS057 REV A
1
23
4
GATE
DRAIN
SOURCE
BODY AND
CASE
BODY IS INTERNALLY CONNECTED
TO THE CASE
1Q-24
CD1-1
TO-72
GD
CS
ABSOLUTE M AXIM UM R A T INGS
Drain Cur re nt. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Total Device Dissipat ion at 25oC Case Tem pera ture . . . 1.2W
Stor age Temper at ue Range . . . . . . . . . . . . . -65oC to +200 oC
Lea d Temp e rature (1/ 1 6 " f r om case for 10 sec. ). . . . . . 30 0oC
Oper at ing Temperat ur e Ra nge . . . . . . . . . . . -55oC to +125 oC
SD211 / SD213 / SD215
LLC
DC CHARACTERISTIC S (TA = 25 oC, unless other wise specified )
SYMBOL PARAMETER SD211 SD213 SD215 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
BREAKDOWN VOLTAGE
BVDS Drain-to-Source 30 35
V
VGS = VBS = 0V, ID = 10µA
10 25 10 25 20 25 VGS = VBS = -5V, IS = 10nA
BVSD Sourc e-to Drain 10 10 20 VGD = VBD = -5V, ID = 10nA
BVDB Drain-to-Body 15 15 25 VGB = 0V, sourc e OPEN, ID = 10nA
BVSB Source-to-Body 15 15 25 VGB = 0V, drain OPEN, IS = 10µA
LEAKAGE CURRENT
IDS (OFF) Drain-to-Source 110 110
nA
VGS = VBS = -5V, VDS = +10V
110 VGS = VBS = -5V, VDS = +20V
ISD (OFF) Source-to-Drain 110 110 V
GS = VBD = -5V, VSD = +10V
110VGS = VBD = -5V, VSD = +20V
IGBSGate101010VDB = VSB = 0V, VGS = +30 V
VTThreshold Voltage0.51.02.00.11.02.00.11.02.0VVDS = VGS = VT, IS = 1µA, VSB = 0V
rDS (ON) Drain-to-Source
Resistance
50 70 50 70 50 70
Ω
ID = 1.0mA, VSB = 0, VGS = +5V
30 45 30 45 30 45 ID = 1.0mA, VSB = 0, VGS = +10V
23 23 23 ID = 1.0mA, VSB = 0, VGS = +15V
19 19 19 ID = 1.0mA, VSB = 0, VGS = +20V
17 ID = 1.0mA, VSB = 0, VGS = +25V
AC ELECTRICA L CHARACT ERISTICS
SYMBOL PARAMETER SD211 SD213 SD215 UNITS TEST CONDITIONS
MIN TYP MAX MIN TYP MAX MIN TYP MAX
gfs Forward
Transconductance 10 15 10 15 10 15 ms VDS = 10V, VSB = 0V,
ID = 20mA, f = 1kHz
SMALL SIGNAL CAPACITANCES
CISS Gate Node 2.4 3.5 2.4 3.5 2.4 3.5 pF VDS = 10V, f = 1 MHz
VGS = VBS = -15V
COSS Drain Node 1.3 1.5 1.3 1.5 1.3 1.5
CRSS Source Node 0.3 0.5 0.3 0.5 0.3 0.5
Inf orm at i on furni shed by Calogic is believed to be accurate and reli able. Howe ver, n o responsibi lit y is a ssumed for its use: no r for any in fring eme nt of pate nts or other
rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent rights of Calogic.
CALOGIC LLC, 237 Whitney Place, Fremont, California 94539, Telephone: 510-656-2900, FAX: 510-651-1076 DS057 REV A
PARAMETER SD211 SD212 SD215 UNIT
VDS Drain-to-Source +30 +10 +20 Vdc
VSD Source-to-Drain +10 +10 +20 Vdc
VDB Drain-to-Body +30 +15 +25 Vdc
VSB Source-to-Body +15 +15 +25 Vdc
VGS Gate-to-Source -15
+25 -15
+25 -25
+30 Vdc
VGB Gate-to-Body -0.3
+25 -0.3
+25 -0.3
+30 Vdc
VGD Gate-to-Drain -30
+25 -15
+25 -25
+30 Vdc
