KST-2089-000 1
BC846F
NPN Silicon Transistor
7
Descriptions
• General purpose application
• Switching application
Features
• High voltage : VCEO=55V
• Complementary pair with BC856F
Ordering Information
Type NO. Marking Package Code
BC846F QA SOT-23F
: hFE rank
Outline Dimensions unit :
mm
S
Se
em
mi
ic
co
on
nd
du
uc
ct
to
or
r
PIN Conne cti ons
1. Bas e
2. Emitter
3. Collector
0.4±0.05
0~0.1
3
1
2
1.90 BSC
2.9±0.1
0.15±0.05
2.4±0.1
0.9±0.1
1.6±0.1
KST-2089-000 2
BC846F
Absolute maximum ratings (Ta=25°
°°
°C)
Characteristic Symbol Ratings Unit
Collector-Base voltage VCBO 80 V
Collector-Emitter voltage VCEO 55 V
Emitter-base voltage VEBO 5V
Collector current IC100 mA
Collector dissipation PC200 mW
Junction temperature Tj150 °C
Storage temperature Tstg -55~150 °C
Electrical Characteristics (Ta=25°
°°
°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Collector - Emitter breakdown voltage BVCEO IC=1mA, IB=0 55 - - V
Base-Emitter tu r n on voltage VBE(ON) VCE=5V, IC=2mA 550 - 700 mV
Base-Emitter sa turation voltage VBE(sat) IC=100mA, IB=5mA - 900 - mV
Collec tor -Emitter s a turation voltage VCE(sat) IC=100mA, IB=5mA - - 600 mV
Collector cut-off current ICBO VCB=35V, I E=0 - - 15 nA
DC current gain hFE*VCE=5V, IC=2mA 110 - 800 -
Transition frequency fTVCE=5V, IC=10mA - 150 - MHz
Collec tor output capac itance Cob VCB=10V, IE=0, f=1MHz - - 4.5 pF
Noise figure NF VCE=5V, IC=200µA,
f=1KHz, Rg=2KΩ--10dB
* : hFE rank / A : 110 ~ 220, B : 200 ~ 450, C : 420 ~ 800
KST-2089-000 3
BC846F
Electrical Characteristic Curves
Fig. 4 hFE -IC
Fig. 1 PC –Ta Fig. 2 IC -VBE
Fig. 3 IC -VCE
Fig. 5 VCE(sat) -IC
