=e a <_ - Features @ Automatic power-down when SEMICONDUCTOR CYPRESS SEMICONDUCTOR TYE-BAO -e ULE DMM 2589bb2 OOOGLEY 2 EM CYP Cy7C494 CY7C195 CY7C196 @ Capable of withstanding greater than 2001V electrostatic discharge 65,536 x 4 Static R/W RAM and CY7C195, CE, CE, on the CY7C196) andwrite enable (WE) inputs are both LOW. deselected Functional Description Data on the four input pins (I/Og through 1/O3) is written into the memory location, Output Enable (OE) feature (7C195 = The CY7C194, CY7C195, and CY7C196 specified on the address pins (Ag through and 7C196) are high-performance CMOS static RAMs Aus). CMOS for optimum speed/power organizedas 65,536 by , bits. Easy memory Readingthe device is accomplished by taking . xpansion is provided by active LOW chip , a @ High speed enable(s) (CE on the CY7C194 and thechipenable(s) (CE on the CY7C194 and taa = 25 ns CE. CY7C195, CE;, CE, on the CY7C196) CY7C195, CE}, CE2 on the CY7C196) and , a Lowactive power three-state drivers. Theyhaveanautomatic LOW, while write enable (WE) remains 880 mW power-down feature, reducing the power HIGH. Under these conditions the contents 4 5 of the memory location specified on the ad- a , consumption by 75% when deselected. nena Low standby power ws ve i dress pins will appear on the four data output 220 mW Writing to the device is accomplished when pins. e@ TTL-compatible inputs and outputs the chip enable(s) (CE on the CY7C194 Adie coat is used to ensure alpha immunity, Logic Block Diagram Pin Configurations DIP/SOJ DIP/SOJ Top View Top View Ae] 240 Yeo Veo LJ AoC] an x As Anlis 2007 Ag Aa Ainf{e 70194 1910 ay Ai And 18F Ag Ag cE Ais] 177) NG 2 INPUT BUFFER Ant : 160 vos = reise) AisQhio 4501 YO, O3 7 NC Ay cE 141] Oo WO, (#195) ne YO3 Gnp C12 We VO, Ay 8 g Yop As 71 G 1024 x64x4 z "a 194-2 Bs 3 AIRAY w Gis4-3 rN 2 q Top View Ato 2298 COLUMN DECODER 2 < SSL PILE nh ok me 1D OF CD Oe a 1 2 18 1314 151617 Lu yt _ lozigse Ci94~4 0194-5 Selection Guide 7C194-12 | 7C194~15 | 7C194--20 7CI9S12 | 7C195-15 | 7C195--20 7C19612 | 7C196-15 | 7C0196-20 7C19425 | 7C194~35 | 7019445 7C195~25 | 7C195-~35 | 70195~45 7C19625 | 7C196-35 | 7019645 Maximum Access Time (ns) 12 15 20 25 35 45 MaximumOperating Commercial 160 150 140 120 120 120 Current(mA) Military 160 150 130 130 130 Maximum Standby Current (mA) 40 40 40 35 35 35 Shaded area contains advanced information. 2-402WBE D BM 2S4%bbe COCKELES 4 BR CYP CY7C194 an, CY7C195 SS S*Cipress CYPRESS SEMICONDUCTOR CY7C196 . SS" SEMICONDUCTOR Maximum Ratings T-46-23-10 (Abovewhich the useful life may be impaired. Foruserguidelines, Static Discharge Voltage ......... teveeee te eenene >2001V nottested.) (per MILSTD883, Method 3015 Storage Temperature .......0e0005 cece 65Cto +150C Latch-UpCurrent ..............46- ceseeee eee. >200mMA Ambient Temperaturewith - Operating Range PowerApplied .........cccseeeeeesees 55C to $125C Ambient Supply Voltage to Ground Potential........ 0.5V to +7.0V Range Temperaturel! Vcc DC Voltag Applied to Outputs ; inHighZ State ....+c.stesseeeeseeeese -OSVto+7.0V | Commercial OPC to +70C 5V = 10% DC Input Voltage ........cceeeeeeeeeees 3.0V to +7.0V Military 55C to 125C SV + 10% Output Current into Outputs(LOW) ......-.e0.0.5. 20mMA Electrical Characteristics Over the Operating Rangel 7C194-12 7C19415 7C19512. 7C195-15 5 7C19612 7C196-15 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Units Vou Output HIGH Voltage =| Vcc = Min, Jon = 4.0mA 2.4 2.4 Vv Vor Output LOW Voltage Vec = Min., Ior, = 8.0 mA 0.4 04 Vv Vin Input HIGH Voltage : 2.2 Vec 2.2 Vcc Vv Vit Input LOW Voltage -05 | 08 | -05 ] 08 v Ix Input Load Current GND < Vi < Vcc -10 | +10 | 10 | +10 HA Ioz Output Leakage GND < Vo < Veco ~10 | +10 | -10 | +10 pA Current Output Disabled Tos Output Short Voc = Max., 300 300 | mA Circuit Currentl3] Vout = GND Toc Voc Operating Voc = Max. Iour=OmA, | Com'l 160 150 mA Supply Current f =fax =1/trc Mil 160 Isat AutomaticCE Max. Vcc, CE12 > Vm 40 40 mA Power-DownCurrent Vin > Vin or Vin < Vis ] TTLInputsl4l f= fax Isp2 AutomaticCE Max. Vcc, CEi,2 > Vcc 0.3V, 20 20 mA Power-DownCurrent Vin > Veco 0.3V or CMOSInputsl4] Vin <.0.3V,=0 Shaded area contains advanced information. : Notes: 1. Tais the instant on case temperature. 2. Seethe last page of this specification for Group A subgroup testing in- formation. 3. Notmore than 1 outputshould be shorted at one time. Duration ofthe short circuit should nat exceed 30 seconds, 4. Avpull-up resistor to Vcc on the CE input is required to keep the device deselected during Vcc power-up, otherwise Isp will exceed values given, 2~403 ene nee Te eee ae eed ee OE ed a ee tater SRAMs a= ete 4BE D MM 2S54%bbe2 OOObbbb & Mm CYP CY7C194 == CY7C195 =... : DUCTOR = CYPRESS SEMICON CYICI96 SS SEMICONDUCTOR ; wat a T-46~23-10 Electrical Characteristics Over the Operating Rangel] (continued) 7C19420 | 7C19425, 35, 45 7C195~-20 | 7C19525, 35, 45 7C19620 | 7C19625, 35, 45 Parameters Description Test Conditions Min. | Max. | Min. Max. | Units Vou Output HIGH Voltage =| Vcc = Min, Ion = ~ 4.0mA 2.4 2.4 Vv VoL Output LOW Voltage Vcc = Min., Joy = 8.0 mA 0.4 0.4 Vv Vie Input HIGH Voltage 22 | Vcc | 2.2 Veco Vv Vit. Input LOW Voltage 05) 08 | ~3.0 0.8 Vv Ix Input Load Current GND < Vi< Vcc 10 | +10 | 10 +10 [| pA Toz Output Leakage GND < Vo < Vcc, -10 | +10 | -10 +10 pA Current Output Disabled los Output Short Vcc = Max., 350 350 mA CircuitCurrent{31 Vout = GND Toe Vcc Operating Voc = Max. Iour =OmA, | Com! 140 120 mA Supply Current f=fMax =I/trc - Mil 150 130 Ispi AutomaticCE Max. Vcc, CE1,2 > Vie 40 35 mA Power-DownCurrent Vin > Vig or TTL Inputsl4] Vin < Vi. f = fmax Isp AutomaticCE Max, Voc, CE1,2 > Voc 0.39, 20 20 mA Power-DownCurrent Vin = Vcc 0.3V or CMOSiInputs(4] Vin < 0.3V, =0 Shaded area contains advanced information. Capacitancel5! Parameters Description Test Conditions Max. Units Cr InputCapacitance Ta = 25C, f = 1MHz, 10 pF Cout OutputCapacitance Veo =5.0V 10 pF Note: 5. Tested initially and after any design or process changes that may affect these parameters. AC Test Loads and Waveforms Ri 481.0, RL 4310, ev ad ALL INPUT PULSES wee ome 3.0V 0% 80% 10%, 10% Son T 285.0 oer I 2550 oxo INCLUDING INCLUDING <5ns <6ns WGAND> oo JIGAND=> - SCOPE ~ = @) a) cres-8 oret-7 Equivatent to: THEVENIN EQUIVALENT 1670 QUTPUT Om 0 1,73QOOLLL? & EM CYP CY7C194 46E D gm 2a58%bbe aa CY7C195 Bee CYPRESS SENICONDUCTOR CY7C196 Sze SEMICONDUCTOR T-46~23-19 Switching Characteristics Over the Operating Rangel? mT SRAMs | 7C19412 | 7C194-15 | 7C194-20 | 7C194-25 | 7C194-35 | 7C19445 ~~ 7C19512 | 7C19515 | 7C0195-20 | 7C195~-25 | 7C195-35 | 7C19545 70196-12 | 7C19615 | 7C196-20 | 7C196-25 | 7C19635 | 7C19645 Parameters Description Min. | Max. | Min. | Max. | Min. | Max. | Min, | Max. | Min. | Max. | Min. | Max. | Units READ CYCLE tre Read Cycle Time 12 15 20 25 35 45 ns tAA Address to Data Valid. 12 15 20 25 35 45 ns toHa Output Hold from 3 3 3 3 3 3 ns AddressChange taceL CE LOW to 12 15 20 25 35 45 | ns tacr2 Data Valid tpoE OE LOW to | 7C195, 6 8 10 15 20 20 ns. Data Valid | 70196 tizoR OELOW to ]7C195, | 0 0 0 3 3 3 ns LowZ - 1|7C196 tHZOE OEHIGH_ |7C195, 7 8 8 13 15 20 ns to High ZI8] | 70196 tezcEL CE LOW to 3 3 3 3 3 3 ns tLzcR2 Low ZI] tyzcEHL CE HIGH to 7 8 10 13 15 20 ns tHzcE2 High zi? 8 tpu CELOW to 0 0 0 0 0 0 ns Power-Up tpp CE HIGH to 12 15 20 25 35 45 ns Power-Down WRITE CYCLED! twe Write Cycle Time 12 15 20 25 35 45 ns tscr CE LOW to Write 9 10 15 20 30 40 ns End taw Address Set-Up to 9 10 15 20 25 35 ns Write End tHa Address Hold from 0 0 0 0 0 0 ns Write End tsa Address Set-Up to 0 0 0 0 0 0 ns Write Start tpwE WE Pulse Width 9 10 15 20 25 30 ns tsp Data Set-Up to 7 8 10 15 17 20 ns Write End tup Data Hold from 0 0 0 0 0 0 ns Write End tLzwe WE HIGH to 3 3 3 3 3 3 ns Low ZI7 tuzweE WE LOW to 7 7 10 0 13 0 15 0 20 ns High ZI. 8) Notes: 6. Testconditions assume signal transitiontime of Snsorless,timingref- 9. Theinternal write time of the memory is defined by the overlap of CE; erence levels of 1.5V, input pulse levels of 0 to3.0V, and output loading of the specified Ior/Iox and 30 pF load capacitance. 7, At any given temperature and voltage condition, tyzce is less than tizce and tyzwe is less than tpzwe for any given device. 8 tazoEs tyzce, and tyzwe ate specified with Cy = 5 pF as in part (b) of AC Test Loads. Transition is measured +500 mV from steady state voltage. : LOW, CE2 LOW, and WE LOW. All signals must be LOW to initiate awrite and any signal can terminate a write by going HIGH. The data inputset-up and hold timing should be referenced to the risingedge of the signal that terminates the write. 2-4054WLE D Mm 258 bbe OOOLLLS T ma cyPp CY7C194 CY7C195 CYPRESS SEMICONDUCTOR CY7C196 Switching Waveforms 6 T-46-23-19 Read Cycle No. 1[1 11] tac | ADDRESS xK x ) tas | : . tom DATA OUT PREVIOUS DATA VALID Kx K DATA VALID . . Ct94-8 Read Cycle No. 2{10, 12] tac CE, CE mN . a 7 tace OE roses a tyzos topos _> tae Pe te DATA OUT HICH IMPEDANCE LLG DATA VALID - . iq. tf} 706 _____J m tp | surrig loc 50% CURRENT 50% ISB Ci94-9 Write Cycle No. 1 (CE Controlled)(?: 13, 14] two >| ADDRESS * Co a i (7C196) tsa VK taw tha ~ We ROM hLiseyE tsp tup DATA IO DATA VALID C194-10 Notes: 10, WE is HIGH for read cycle. 11. Device is continuously selected: CEy = Vi_, CE2 = Vir. (7C196), and OE = Viz. (7C195 and 7C196). 12. Address valid prior to or coincident with TE; and CE, transition LOW. 13. Data I/O will be high impedance if OE = Vy (7C195 and 7C196), 14. Ifany CE goes HIGH simultaneously with WE HIGH, the output re- mains in a high-impedance state, 15. The minimum write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of tw, and tsp.at wet WLE D MM 2S&%bbe gO0b664 i Ea CYP cy7c194 = : CY7C195 - CYPRESS SEMICONDUCTOR -CY7C196 SS] SEMICONDUCTOR Switching Waveforms (continued) T-46-23-10 Write Cycle No. 2 (WE Controlled, OE HIGH During Write for 7.195 and 7C196 only)( 13, 14] / ADDRESS = < a CE, TORI NS SM, Li2 Le taw > twa . t t > . We SA x PWE. a RX, 7 YY ~ ~_ tsp > tub DATA Wo xX KX DATA VALID _ Mt- fHZ0E Ci94-12 Write Cycle No. 3 (WE Controlled. OF LOW)l!4: 15] eat. a! ADDRESS * Va NWN Wt: Y taw oe toa We Thy ssa \ / et. ts tu tazwe co + fawe Cro411 Typical DC and AC Characteristics ; NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT vs. SUPPLY VOLTAGE vs, AMBIENT TEMPERATURE _, Ys OUTPUT VOLTAGE . 1.4 loo E 120 ao a , ole 212 & 100 810 38 10 a 5 80 a 0.8 Fi 0.8 o a We 60 z 06 3 06 -& ic 3 40 2 04 2 04 Voc = 5.0V a Vin = 5.0V 5 0.2 0.2 p, 20 2 0.0 0.0 6 0 40 45 5.0 6.5 6.0 -55 25 125 0.0 1.0 2.0 3.0 4.0 , SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V)er eer 4BE D mm 2S58%bbe2 CYPRESS SEMICONDUCTOR o SS, .. OOOb670 & Sm cyYP whee CY7C194 CY7C195 CY7C196 = SEMICONDUCTOR Typical DC and AC Characteristics (continued) * NORMALIZED ACCESS TIME NORMALIZED ACCESS TIME "ys. SUPPLY VOLTAGE ys, AMBIENT TEMPERATURE 14 1.6 13 & 3 1.4 Qa 12 a N N12 a = _ 2 Ta = 25C @ 10 Oo 3 10 8 Veo = 5.0V 0.9 08 0.8 06 40 45 60 55 60 -55 25 125 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE vs. SUPPLY VOLTAGE ys. OUTPUT LOADING 3.0 30.0 25 = 25.0 g = & G 20 ~ 200 z < $15 i 15.0 a tu 2 10 10.0 Veg = 4.5V Ta = 25C 05 5.0 0.0 00 10 20 30 40 50 0 200 400 600 600 1000 SUPPLY VOLTAGE (V) CAPACITANCE (pF) 7C194 Truth Table Data YO Mode xX -Down H L 7C195 Truth Table Zz Data Out Data In L Data /O Z Data Out Data In Zz x L L L H 7C196 Truth Table Xx H Data l/O T-46-23-10 OUTPUT SINK CURRENT ys. OUTPUT VOLTAGE hot o OUTPUT SINK CURRENT (mA) 10 20 3.0 OUTPUT VOLTAGE (V) 4.0 NORMALIZED Icc vs. CYCLE TIME 1.25 g Veo = 5.0V = Ta = 25C wy 1.00 Vin = 0.5V z = x 9 0.75 ro 10 20 30 40 CYCLE FREQUENCY (MHz) Power Standby 2-4084BE D = eS%bbe OOOLG71 T MM CYP CY7C194 SRAMs (*] => CY7C195 =, CYPRESS SEMICONDUCTOR CY7C196 =a = = SEMICONDUCTOR ' . T-46-23-10 Ordering Information Speed Package | Operating Speed - Package | Operating (us) Ordering Code Type Range (us) Ordering Code Type Range 12 CY7C194-12DC. D4 Commercial 12 CY7C195-12DC D22 Commercial CY7C194--12LC L54 . CY7C195-12LC L54 CY7C19412PC P13 CY7C19512PC P2i CY7C194-12VC V13 CY7C19S12VC V2i 15 4 CY7C194-15DC Di4 Commercial 15 CY7C195-15DC D22 Commercial CY7C194-15LC L54 CY7C19515LC L54 CY7C194-15PC P13 CY7C195-15PC. P2t CY7C19415VC vi3 CY7C195~15VC V21 CY7C19415DMB D4 Military CY7C195~15DMB D22 Military CY7C1941SKMB K73 CY7C19515KMB K74 CY7C194-15LMB L54 CY7C19515LMB LS4 20 CY7C19420DC D14 Commercial 20 CY7C195-20DC D22 Commercial CY7C19420LC L54 CY7C195~-25LC L54 CY7C19420PC P13 CY7C195~20PC P21 CY7C19420VC vi13 CY7C195-20VC V2i CY7C19420DMB D14 Military CY7C195-20DMB D22 Military CY7C19420KMB K73 CY7C19520KMB K74 CY7C19420LMB L54 CY7C19520LMB L54 25 CY7C19425DC p14 Commercial 25 CY7C19525DC D22 Commercial CY7C19425LC L54 CY7C19525LC L54 CY7C19425PC P13 CY7C195--25PC P21 CY7C19425VC vi13 CY7C19525VC V2t CY7C194-25DMB D4 Military CY7C19525DMB D22 Military CY7C19425KMB K73 CY7C195-25KMB K74 CY7C194-25LMB LS4 CY7C19525LMB L54 35 CY7C19435DC Di4 Commercial 35 CY7Ci95-35DC D22 Commercial CY7C19435LC L54 CY7C195~35LC L54 CY7C19435PC P13 CY7C19535PC P2L CY7C19435VC vi13 CY7C19535VC V21 CY7C19435DMB Di4 Military CY7C19535DMB D22 Military CY7C19435KMB K73 CY7C19535KMB K74 CY7C194-35LMB L54 CY7C19535LMB L54 45 CY7C19445DC Di4 Commercial 45 CY7C19545DC D22 Commercial CY7C19445LC LS54 CY7C19545LC LS54 CY7C19445PC P13 CY7C19545PC P21 CY7C19445VC vi13 CY7C19545VC V21i CY7C19445DMB D14 Military CY7C195~45DMB D22 Military CY7C19445KMB K73 CY7C195-45KMB K74 CY7C19445LMB L54 CY7C195-45LMB L54 Shaded area contains advanced information. Shaded area contains advanced information. 2-409 wh genoa ie neat Baie ae a en caee_l4BE D MM@ cS%bbe OOObL?e 1 a CYP Pcy7c194 CYPRESS SEMICONDUCTOR Ordering Information (continued) Shaded area contains advanced information. 2-410 Speed Package | Operating MILITARY SPECIFICATIONS (ns) Ordering Code Type Range Group A Subgroup Testing 12 CY7C19612DC D22_ | Commercial . CYICI9612LC 154 : DC Characteristics CY7C19612PC P2L Parameters Subgroups CY7C19612VC Vat Vou 1,2,3 15 CY7C196~15DC D22. |: Commercial VoL 1,2,3 CY7C19615LC L54 Vie 1,2,3 CY7C196-15PC P21 Vir. Max. 1,2,3 CY7C19615VC V21 Tix 123 CY7Ci9615DMB D22 | Military loz 2,3 CY7C19615KMB Ki4 ; Tos 123 CY7C19615LMB L54 Toc 1,2,3 20 CY7C19620DC D22. | Commercial CY7C19620LC L54 Isp 1,23 CY7C19620PC P2i Tspa 1,2,3 CY7C19620VC v21 _ Switching Characteristics CY7C19620DMB p22 | Military Parameters | Subgroups CY7C19620KMB K74 READ CYCLE CY7C196-20LMB L54 25. | CY7C196~25DC D22 | Commercial 'Re 7,8,9, 10, 11 CY7C19625LC Ls4 taa 7,8, 9, 10, 11 CY7C19625PC P21 tona 7,8, 9, 10, 11 CY7C19625VC v2i tACE ACE2 7, 8, 9, 10, 11 CY7C196-25DMB D22 | Military toogl!4 7,8, 9, 10, 11 CY7C196-25KMB K74 WRITE CYCLE CY7C196-25LMB L54 two 7, 8,9, 10, 14 35 CY7C19635DC D22 Commercial tsce 7,8,9, 10, 11 CY7C19635LC 154 tow 78,9, 10,11 CY7C19635PC P24 ma 755-1011 CY7C19635VC Vai C7CI96-35DMB_ | 22 | Military tsa 7,8,9, 10, U1 CY7C19635KMB K74 tpwE 7,8, 9, 10, 11 CY7C19635LMB L54 tsp 7,8, 9, 10, 11 45 CY7C196~45DC D22_ | Commercial typ 7, 8, 9, 10, 11 CY7C19645LC 154 Note: CYICIOGN SPC ma 16, 7C195 and 7C196 only. CY7C19645VC vat Document #: 3800081F CY7C19645DMB D22_ | Military CY7C19645KMB K74 CY7C19645LMB 154 "ae CY7C195 CY7C196 T-46-23-10