AUTOMOTIVE GRADE AUIRFIZ44N Features l l l l l l l l l PD - 97767 HEXFET(R) Power MOSFET Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Distantce = 4.8mm 175C Operating Temperature Fully Avalanche Rated Lead-Free, RoHS Compliant Automotive Qualified* V(BR)DSS 55V RDS(on) max. ID 31A Description Specifically designed for Automotive applications, this cellular design of HEXFET(R) Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications. 24m G D S TO-220AB Full-Pak AUIRFIZ44N G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (T A) is 25C, unless otherwise specified. Max. Parameter ID @ TC = 25C Continuous Drain Current, VGS @ 10V 31 ID @ TC = 100C Continuous Drain Current, VGS @ 10V 22 Pulsed Drain Current 160 IDM ch PD @TC = 25C Power Dissipation Linear Derating Factor Gate-to-Source Voltage VGS dh Units A 45 0.3 20 W W/C V mJ EAS Single Pulse Avalanche Energy (Thermally Limited) 210 IAR Avalanche Current 25 A EAR dv/dt Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and 4.5 5.0 -55 to + 175 mJ V/ns TJ TSTG ch c eh Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case ) Mounting Torque, 6-32 or M3 screw C 300 10 lbf in (1.1N m) y Thermal Resistance RJC Junction-to-Case i RJA Junction-to-Ambient Parameter y Typ. Max. Units --- 3.3 C/W --- 65 HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 03/14/12 AUIRFIZ44N Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS / TJ Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance RDS(on) VGS(th) Gate Threshold Voltage gfs Forward Transconductance Drain-to-Source Leakage Current IDSS IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 55 --- --- 2.0 17 --- --- --- --- --- 0.055 --- --- --- --- --- --- --- --- --- 24 4.0 --- 25 250 100 -100 Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 17A V VDS = VGS , ID = 250A VDS = 25V, ID = 25A S A VDS = 55V, VGS = 0V VDS = 44V, VGS = 0V, T J = 150C nA VGS = 20V VGS = -20V h f h Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Qg Q gs Q gd td(on) tr td(off) tf LD Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- --- --- 7.3 69 47 60 4.5 65 12 27 --- --- --- --- --- nC ns nH Conditions ID = 25A VDS = 44V VGS = 10V, See Fig. 6&13 VDD = 28V ID = 25A RG = 12 RD = 1.1, See Fig. 10 Between lead, fh LS Internal Source Inductance --- 7.5 --- 6mm (0.25in.) from package Ciss Cos s Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance --- --- --- 1300 410 510 --- --- --- and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 C Drain to Sink Capacitance --- 12 --- pF fh D G S h = 1.0MHz Diode Characteristics Min. Typ. Max. Units IS Continuous Source Current Parameter --- --- 31 ISM (Body Diode) Pulsed Source Current --- --- 160 VSD trr Q rr ton Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time --- --- --- --- 65 160 1.3 98 240 (Body Diode) c Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) VDD = 25V, starting TJ = 25C, L = 470H RG = 25, IAS = 25A. (See Figure 12) ISD 25A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C. 2 Conditions MOSFET symbol A V ns nC showing the integral reverse D G p-n junction diode. T J = 25C, IS = 17A, VGS = 0V T J = 25C, IF = 25A di/dt = 100A/s f S f Intrins ic turn-on time is negligible (turn-on is dominatedby LS+LD) Pulse width 300s; duty cycle 2%. t=60s, =60Hz Uses IRFZ44N data and test conditions. R is measured at Tj at approximately 90C. www.irf.com AUIRFIZ44N Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Machine Model Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. TO-220 Fullpak N/A Class M2 (+/- 200V) AEC-Q101-002 ESD Human Body Model Class H1B (+/- 1000V) AEC-Q101-001 Charged Device Model Class C5 (+/- 2000V) AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Highest passing voltage. www.irf.com 3 AUIRFIZ44N 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP 100 4.5V 10 20s PULSE WIDTH TC = 25C 1 0.1 TJ 10 1 100 A 4.5V 10 100 2.5 TJ = 25C TJ = 175C 10 V DS = 25V 20s PULSE WIDTH 5 6 7 8 9 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 1000 4 TJ10 A 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1 1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) 100 20s PULSE WIDTH TC = 175C 1 0.1 10 A I D = 41A 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com AUIRFIZ44N C, Capacitance (pF) 2000 Ciss 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V GS , Gate-to-Source Voltage (V) 2500 I D = 25A V DS = 44V V DS = 28V 16 1500 12 Coss 1000 Crss 500 0 1 10 100 A 8 4 FOR TEST CIRCUIT SEE FIGURE 13 0 0 10 VDS , Drain-to-Source Voltage (V) 30 40 50 60 70 A Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) ID , Drain Current (A) ISD , Reverse Drain Current (A) 20 100 TJ = 175C TJ = 25C 10 VGS = 0V 1 0.5 1.0 1.5 2.0 2.5 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com A 3.0 100 10s 100s 10 1ms TC = 25C TJ = 175C Single Pulse 1 1 10ms A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 AUIRFIZ44N RD VDS VGS 35 D.U.T. RG + - VDD I D , Drain Current (A) 30 10V 25 Pulse Width s Duty Factor 20 Fig 10a. Switching Time Test Circuit 15 10 VDS 5 0 90% 25 50 75 100 125 150 175 TC , Case Temperature ( C) 10% VGS td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.01 0.00001 0.02 0.01 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com AUIRFIZ44N D.U.T. RG 10 V + V - DD IAS tp 0.01 Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD EAS , Single Pulse Avalanche Energy (mJ) L VDS 500 TOP BOTTOM 400 ID 10A 18A 25A 300 200 100 0 VDD = 25V 25 50 75 100 125 A 150 175 Starting TJ , Junction Temperature (C) VDS IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50K 12V .2F .3F QG 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform www.irf.com ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 AUIRFIZ44N Peak Diode Recovery dv/dt Test Circuit D.U.T + Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer + - - + + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test RG Driver Gate Drive P.W. Period D= - VDD P.W. Period VGS=10V* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS 8 www.irf.com AUIRFIZ44N TO-220AB Full-Pak Package Outline Dimensions are shown in millimeters (inches) TO-220AB Full-Pak Part Marking Information Part Number AUFIZ44N YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, LeadFree XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRFIZ44N Ordering Information Base part number Package Type Standard Pack AUIRFIZ44N TO-220 Fullpak Form Tube 10 Complete Part Number Quantity 50 AUIRFIZ44N www.irf.com AUIRFIZ44N IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. 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