IRFHS8342PbF
2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback December 17, 2013
D
S
G
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Current limited by package.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Rθ is measured at TJ of approximately 90°C.
Parameter Typ. Max. Units
°C/W
Junction-to-Ambient (<10s)
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
Drain-to-Source Breakdown Voltage 30 ––– ––– V
ΔΒV
/ΔT
Breakdown Voltage Temp. Coefficient ––– 22 ––– mV/°C
R
Static Drain-to-Source On-Resistance ––– 13 16
––– 20 25
V
Gate Threshold Voltage 1.35 1.8 2.35 V
ΔV
Gate Threshold Voltage Coefficient ––– -5.8 ––– mV/°C
I
Drain-to-Source Leakage Current ––– ––– 1.0
––– ––– 150
I
Gate-to-Source Forward Leakage ––– ––– 100
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 18 ––– ––– S
Q
Total Gate Charge ––– 4.2 ––– nC
Q
Total Gate Charge ––– 8.7 ––– V
= 15V
Q
Gate-to-Source Charge ––– 1.5 –––
Q
Gate-to-Drain Charge ––– 1.3 –––
Q
Output Charge ––– 3.0 ––– nC
R
Gate Resistance ––– 1.9
Ω
t
Turn-On Delay Time ––– 5.9 –––
t
Rise Time –––15–––
t
Turn-Off Delay Time ––– 5.2 –––
t
Fall Time ––– 5.0 –––
C
Input Capacitance ––– 600 –––
C
Output Capacitance ––– 100 –––
C
Reverse Transfer Capacitance ––– 46 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
Continuous Source Current
(Body Diode)
I
Pulsed Source Current
V
Diode Forward Voltage ––– ––– 1.0 V
t
Reverse Recovery Time ––– 11 17 ns
Q
Reverse Recovery Charge ––– 13 20 nC
t
Forward Turn-On Time Time is dominated by parasitic Inductance
MOSFET symbol
nA
ns
A
pF
nC V
= 10V
V
= 20V
V
= -20V
––– ––– 76
––– ––– 8.5
d
V
= 0V, I
= 250μA
Reference to 25°C, I
= 1mA
V
= 10V, I
= 8.5A
ed
See Fig.17
ƒ = 1.0MHz
T
= 25°C, I
= 8.5A
d
, V
= 15V
di/dt = 330A/μs
e
T
= 25°C, I
= 8.5A
d
, V
= 0V
e
integral reverse
R
=1.8Ω
V
= 10V, I
= 8.5A
d
V
= 24V, V
= 0V, T
= 125°C
μA
I
= 8.5A
d
(See Fig. 6 & 16)
I
= 8.5A
d
V
= 0V
V
= 25V
V
= 24V, V
= 0V
VDS = VGS, ID = 25μA
V
= 4.5V, I
= 6.8A
e
mΩ
V
= 15V, V
= 4.5V
e
V
= 4.5V, V
= 15V, I
= 8.5A
d
V
= 16V, V
= 0V