Hermetic Infrared Emitting Diode OP215, OP216 Features: * Hermetically sealed package * Mechanically and spectrally matched to other OPTEK devices * Designed for direct mount to PCBoard * Enhanced temperature range * Excellent coupling efficiency OP216 OP215 Description: Each OP215 and OP216 device is an 890 nm gallium aluminum arsenide infrared emi ng diode (GaAIAs), mounted in a herme cally sealed "pig tale" package with an enhanced temperature range and a narrow irradiance pa ern that provides high on-axis intensity for excellent coupling efficiency. These devices offer significantly higher power output than GaAs at equivalent drive currents and have a wavelength that is matched to silicon's peak response. Their small package size permits high device density moun ng. The OP216 series devices provide an addi onal moun ng tab connected to the Cathode/Case. All these LEDs are mechanically and spectrally matched to the OP300 series, OP516, OP600 series and OP640 series devices. Please refer to Applicaon Bullens 208 and 210 for addional design informaon and reliability (degradaon) data, and to Applicaon Bullen 202 for pill-type soldering to PCBoard. Ordering Information Applications: * * * * * * Part Number Non-contact reflective object sensor Assembly line automation Machine automation Machine safety End of travel sensor Door sensor OP215A OP215B OP215C OP215D OP216A OP216B OP216C OP216D LED Peak Wavelength 890 mm Optical Power mW/ Total Beam Angle cm2 (Min) 1.20 0.60 0.30 0.20 24 1 Pin # LED 1 2 Anode Cathode 2 RoHS General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics' own data and is considered accurate at time of going to print. (c) TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 1 Hermetic Infrared Emitting Diode OP215, OP216 Electrical Specifications Absolute Maximum Ratings (TA = 25 C unless otherwise noted) Storage Temperature Range -65o C to +150o C Operating Temperature Range -65o C to +125o C Reverse Voltage 2.0 V Continuous Forward Current 100 mA Peak Forward Current (2s pulse with 0.1% duty cycle) 1.0 A Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron] 260 C(1)(2) Power Dissipation 150 mW(3) Electrical Characteristics (TA = 25 C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS - - mW/cm2 TEST CONDITIONS Input Diode EE (APT)(3) 1.20 0.60 0.30 0.20 IF = 50 mA(4) VF Forward Voltage - - 1.80 V IF = 50 mA IR Reverse Current - - 100 A VR= 2.0 V Wavelength at Peak Emission - 890 - nm IF = 10 mA Spectral Bandwidth between Half Power Points - 80 - nm IF = 10 mA Spectral Shift with Temperature - +0.18 - nm/C IF = Constant Degree IF = 50 mA P B /T Apertured Radiant Incidence OP216A OP216B OP216C OP216D HP Emission Angle at Half Power Points tr Output Rise Time - 500 - ns tf Output Fall Time - 250 - ns - 24 - IF(PK)=100 mA, PW=10 s, and D.C.=10.0% Notes: 1. Refer to Application Bulletin 202 which reviews proper soldering techniques for pill-type devices. 2. No clean or low solids. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. 3. Derate linearly 1.50 mW/ C above 25 C. 4. For OP216, EE(APT) is a measurement using a 0.180" (4.57 mm) diameter apertured sensor placed 0.653" (16.59 mm) from the lens tip. EE(APT) is not necessarily uniform within the measured area. General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics' own data and is considered accurate at time of going to print. (c) TT electronics plc OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 2 Hermetic Infrared Emitting Diode OP215, OP216 Performance OP215 & OP216 Forward Voltage vs Forward Current vs Temperature Optical Power vs IF vs Temperature 2.0 1.8 Normalized at 50 mA and 20 C 1.8 1.7 -60 C -40 C -20 C 0 C 20 C 40 C 60 C 80 C 100 C 120 C 1.6 Normalized Optical Power Typical Forward Voltage (V) 1.6 1.5 1.4 1.3 -60 C -40 C -20 C 0 C 20 C 40 C 60 C 80 C 100 C 120C 1.2 1.1 1.0 0.9 0 5 10 15 20 25 30 35 40 45 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 50 5 10 15 20 25 30 35 40 45 50 Forward Current IF (mA) Forward Current (mA) Normalized Intensity vs Beam Angle Distance vs Output Power vs Forward Current 1.1 6 1.0 Normalized at 1" and 50 mA 0.9 Forward Current Angular Displacement ( Degrees) Normalized Output Power 5 10 mA 20 mA 30 mA 40 mA 50 mA 60 mA 70 mA 80 mA 90 mA 100 mA 4 3 2 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1 0.1 0 0.2 '' 0.0 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' Distance (inches) General Note TT Electronics reserves the right to make changes in product specification without notice or liability. All information is subject to TT Electronics' own data and is considered accurate at time of going to print. (c) TT electronics plc 2.0 '' -45 -35 -25 -15 -5 5 15 25 35 45 Normalized Intensity OPTEK Technology, Inc. 1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200 www.optekinc.com | www.ttelectronics.com Issue B 07/2016 Page 3 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: TT Electronics: OP215D