© 2011 IXYS CORPORATION, All Rights Reserved
IXYN82N120C3H1 VCES = 1200V
IC110 = 46A
VCE(sat) ≤ ≤
≤ ≤
≤
3.2V
tfi(typ) = 93ns
DS100352C(10/11)
High-Speed IGBT
for 20-50 kHz Switching
Features
zOptimized for Low Switching Losses
zSquare RBSOA
zIsolation Voltage 2500V~
zAnti-Parallel Ultra Fast Diode
zPositive Thermal Coefficient of
Vce(sat)
zAvalanche Rated
zHigh Current Handling Capability
zInternational Standard Package
Advantages
zHigh Power Density
zLow Gate Drive Requirement
Applications
zHigh Frequency Power Inverters
zUPS
zMotor Drives
zSMPS
zPFC Circuits
zBattery Chargers
zWelding Machines
zLamp Ballasts
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVCES IC = 250μA, VGE = 0V 1200 V
VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES, VGE = 0V 50 μA
TJ = 125°C 3 mA
IGES VCE = 0V, VGE = ±20V ±100 nA
VCE(sat) IC= 82A, VGE = 15V, Note 1 2.75 3.20 V
TJ = 125°C 3.50 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C, RGE = 1MΩ 1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 105 A
IC110 TC= 110°C 46 A
IF110 TC= 110°C 42 A
ICM TC= 25°C, 1ms 320 A
IATC= 25°C 41 A
EAS TC= 25°C 800 mJ
SSOA VGE = 15V, TVJ = 125°C, RG = 2Ω ICM = 164 A
(RBSOA) Clamped Inductive Load @VCE ≤ VCES
PCTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60Hz t = 1min 2500 V~
IISOL ≤ 1mA t = 1s 3000 V~
MdMounting Torque 1.5/13 Nm/lb.in.
Terminal Connection Torque 1.3/11.5 Nm/lb.in.
Weight 30 g
1200V XPTTM IGBT
GenX3TM w/ Diode
SOT-227B, miniBLOC
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
G
E c
E c
C
E153432
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN82N120C3H1
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Symbol Test Conditions Characteristic Values
(TJ = 25°C Unless Otherwise Specified) Min. Typ. Max.
gfs IC = 60A, VCE = 10V, Note 1 30 50 S
Cies 4060 pF
Coes VCE = 25V, VGE = 0V, f = 1MHz 285 pF
Cres 110 pF
Qg(on) 215 nC
Qge IC = 75A, VGE = 15V, VCE = 0.5 • VCES 26 nC
Qgc 84 nC
td(on) 29 ns
tri 78 ns
Eon 4.95 mJ
td(off) 192 280 ns
tfi 93 ns
Eoff 2.78 5.00 mJ
td(on) 29 ns
tri 90 ns
Eon 7.45 mJ
td(off) 200 ns
tfi 95 ns
Eoff 3.70 mJ
RthJC 0.25 °C/W
RthCS 0.05 °C/W
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
SOT-227B miniBLOC (IXYN)
Notes:
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
Reverse Diode (FRED)
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
VF IF = 60A, VGE = 0V, Note 1 2.7 V
TJ = 125°C 1.9 V
IRM 41 A
trr 420 ns
RthJC 0.42 °C/W
IF = 60A, VGE = 0V, TJ = 125°C
-diF/dt = 700A/μs, VR = 600V
© 2011 IXYS CORPORATION, All Rights Reserved
IXYN82N120C3H1
Fi g . 1. Ou tpu t C har acteri sti cs @ T
J
= 25ºC
0
20
40
60
80
100
120
140
160
00.511.522.533.544.55
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
11V
10V
9V
7V
8V
6V
5V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
0
50
100
150
200
250
300
0 5 10 15 20 25 30
V
CE
- Volts
I
C
- Amperes
VGE
= 15V
13V
12V 10V
8V
11V
5V
9V
7V
6V
Fi g. 3. Ou tp ut C har act er i sti cs @ T
J
= 125º C
0
20
40
60
80
100
120
140
160
00.511.522.533.544.555.566.5
V
CE
- Volts
I
C
- Amperes
8V
7V
6V
5V
VGE
= 15V
13V
11V
10V
9V
Fig. 4. Dependence of V
CE(sat)
on
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
V
CE(sat)
- Normalized
VGE
= 15V
I C = 82A
I C = 41A
I C = 164A
Fi g . 5. C o l l ector -to -E mitt er Vo l tage vs.
Gate-to -Emi tter Vo l tage
1.5
2.5
3.5
4.5
5.5
6.5
7.5
8.5
5 6 7 8 9 10 11 12 13 14 15
V
GE
- Volts
V
CE
- Volts
I C
= 164
A
TJ = 25ºC
82
A
41
A
Fig. 6. Input Admittance
0
20
40
60
80
100
120
140
160
33.544.555.566.577.58
V
GE
- Volts
I
C
- Amperes
TJ = 125ºC
25ºC
- 40ºC
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN82N120C3H1
Fig. 7. T ransconductance
0
10
20
30
40
50
60
70
80
0 20 40 60 80 100 120 140 160
IC - Amperes
g
f s
-
Siemens
T
J
= - 40ºC
25ºC
125ºC
Fi g . 10. R ever se-B ias Safe Op er ati ng Area
0
20
40
60
80
100
120
140
160
180
200 300 400 500 600 700 800 900 1000 1100 1200
VCE - Volts
IC - Amperes
T
J
= 125ºC
R
G
= 2
Ω
dv / dt < 10V / ns
Fi g . 11. Maximu m Tran si en t Thermal Imped an ce
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z(th)JC - ºC / W
Fig. 8. Gate Charge
0
2
4
6
8
10
12
14
16
0 20 40 60 80 100 120 140 160 180 200 220
QG - NanoCoulombs
VGE - Volts
V
CE
= 600V
I
C
= 82A
I
G
= 10mA
Fig. 9. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
VCE - Volts
Capacitance - PicoFarads
f
= 1 MHz
Cies
Coes
Cres
© 2011 IXYS CORPORATION, All Rights Reserved
IXYN82N120C3H1
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
0
1
2
3
4
5
6
7
8
2 4 6 8 1012141618
R
G
- Ohms
E
off
- MilliJoules
0
2
4
6
8
10
12
14
16
E
on
- MilliJoules
E
off
E
on
- - - -
T
J
= 125ºC , V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 15. Inductive T urn-off Switching T imes vs.
Gate Res i stan ce
40
60
80
100
120
140
160
180
200
2 4 6 8 10 12 14 16 18
R
G
- Ohms
t
f i
- Nanoseconds
140
220
300
380
460
540
620
700
780
t
d
(
off
)
- Nanoseconds
t
f i
t
d(off)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fig . 13. In d u ctive Switchi ng En erg y Lo ss vs.
Collector Current
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
40 50 60 70 80 90 100
I
C
- Amperes
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
10
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
0.5
1
1.5
2
2.5
3
3.5
4
4.5
25 50 75 100 125
T
J
- Degrees Centigrade
E
off
- MilliJoules
1
2
3
4
5
6
7
8
9
E
on
- MilliJoules
E
off
E
on
- - - -
R
G
= 2
Ω ,
V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
0
40
80
120
160
200
240
280
40 50 60 70 80 90 100
I
C
- Amperes
t
f i
- Nanoseconds
170
180
190
200
210
220
230
240
t
d(off)
- Nanoseconds
t
f i
t
d(off)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
T
J
= 125ºC
T
J
= 25ºC
Fig. 17. Inductive T urn-off Switching T imes vs.
Junction T em perature
0
40
80
120
160
200
240
25 50 75 100 125
T
J
- Degrees Centigrade
t
f i
- Nanoseconds
160
180
200
220
240
260
280
t
d
(
off
)
- Nanoseconds
t
f i
t
d(on)
- - - -
R
G
= 2
Ω
, V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYN82N120C3H1
IXYS REF: IXY_82N120C3(8M)05-10-11
Fig. 19. Inductive Turn-on Switching T imes vs.
Collector Current
20
40
60
80
100
120
140
40 50 60 70 80 90 100
I
C
- Amperes
t
r i - Nanoseconds
0
10
20
30
40
50
60
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 600V
T
J
= 25ºC
T
J
= 125ºC
Fig. 20. Inductive T urn-on Switching T imes vs.
Jun c ti o n Temperat ure
0
20
40
60
80
100
120
140
25 50 75 100 125
T
J
- Degrees Centigrade
t
r i - Nanoseconds
22
24
26
28
30
32
34
36
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
R
G
= 2Ω , V
GE
= 15V
V
CE
= 600V
I
C
= 80A
I
C
= 40A
Fi g . 18. I n d u ct i ve Tur n -on Sw it ch i n g Times vs.
Gate R esi stan c e
0
20
40
60
80
100
120
140
160
2 4 6 8 1012141618
R
G
- Ohms
t r i - Nanoseconds
20
25
30
35
40
45
50
55
60
t d
(
on
)
- Nanoseconds
t
r i
t
d(on)
- - - -
T
J
= 125ºC, V
GE
= 15V
V
CE
= 600V
I
C
= 40A
I
C
= 80A
© 2011 IXYS CORPORATION, All Rights Reserved
IXYN82N120C3H1
Fig. 21. Fig. 22.
Fig. 23. Fig. 24.
Fig. 25. Fig. 26.
Fig. 26. Transient thermal impedance
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
t
p
[s]
Z
thJC
[K / W]
