GC9901 – GC9944
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
Schottky Barrier Diodes
For Mixers and Detectors
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
p
liant
IMPORTANT:
For the most current data, consult our web site: HUwww.microsemi.comU
Specifications are subject to change. Consult factory for latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
DESCRIPTION
Schottky Barrier devices are currently available in single beamlead, dual “T”,
ring quad and bridge quad configurations. Devices are available in monolithic
form for hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are currently available with barrier heights as low as
240 mV and up to 625 mV per junction. By optimizing epitaxy and
metallization, these devices achieve the lowest RS-CJ products resulting in
exceptional conversion loss performance. “High Rel” screening is available on
packaged devices per your requirements.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS/BENEFITS
Mixers
Level Detectors
Phase Detectors
APPLICATIONS
Schottky barrier diodes are suitable for a variety of circuit applications ranging
from single ended RF mixers to low level high speed switching. The
monolithic beamlead design minimizes parasitic inductance and capacitance
insuring repeatable performance through Ku band. Single junction devices
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase
detectors, modulators, etc. With junction capacitances as low as .06 pF,
Monolithic Quads are ideally suited for broadband double balanced mixer
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)
are designed for mixers with low or starved Local Oscillator levels where
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are
designed for applications where high drive levels are available, such as,
Doppler mixers or motion detection. Schottky diodes are available in Ultra-
Low, Medium and High Drive levels to fit virtually any circuit requirement.
ABSOLUTE MAXIMUM RATINGS AT 25º C
3B(UNLESS OTHERWISE SPECIFIED)
Rating Symbol Value Unit
Maximum Power Handling P 100 mW
Storage Temperature TSTG -65 to +175 ºC
Operating Temperature TOP -55 to +150 ºC
KEY FEATURES
Monolithic design for lowest
parasitics
Low Conversion Loss
Suitable for applications to 26.5
GHz
Excellent Noise Figure
Available in low, medium and high
barrier heights
Can be supplied as monolithic
devices for hybrid applications or
as packaged devices
RoHS Compliant1
1 These devices are supplied with Gold
plated terminations. Consult factory for
details.
G
GC
C9
99
90
01
1-
-G
GG
G9
99
94
44
4
GC9901 – GC9944
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
Schottky Barrier Diodes
For Mixers and Detectors
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
p
liant
.
Notes
1. When ordering, specify appropriate package style.
IE: Order GC9901-S12 for single beamlead configuration.
2. V b measured at 10µA (N/A on ring quads).
3. 0 Volts, F=1 MHz (diagonal leads on quads).
4. L.O. = 0 dBm, Nif = 1.5 dB, F = 10 GHz
5. L.O. = 0 dBm
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Model1
Number
Barrier
Height
Freq
Range
VB(V)
2
IR=10μA
(Min)
CJ(pF)3
@0V
(Max)
VF(mV)
@1 mA
(Max)
RD(Ω)
@5 mA
(Max)
NFSSB
(db)4
(Typ)
ZIF(Ω)5
(Typ)
GC9901 Ku-Ka 0.10 340 20 6.5
GC9902 X 0.15 310 16 6
GC9903 C 0.30 300 14 5.5
GC9904
ULTRA
LOW
S
2.0
0.50 280 12 5.5
140
GC9911 Ku-Ka 0.10 360 20 6.5
GC9912 X 0.15 350 16 6
GC9913 C 0.30 340 14 5.5
GC9914
LOW
S
2.0
0.50 330 12 5.5
170
GC9921 Ku-Ka 0.10 470 20 6.5
GC9922 X 0.15 460 16 6
GC9923 C 0.30 440 14 5.5
GC9924
LOW-
MED
S
2.0
0.50 420 12 5.5
200
GC9931 Ku-Ka 0.10 550 20 6.75
GC9932 X 0.15 540 16 6.25
GC9933 C 0.30 530 14 5.75
GC9934
MEDIUM
S
3.0
0.50 510 12 5.5
250
GC9941 Ku-Ka 0.10 660 20 7
GC9942 X 0.15 640 16 6.25
GC9943 C 0.30 630 14 5.75
GC9944
HIGH
S
4.0
0.50 610 12 5.75
300
E
EL
LE
EC
CT
TR
RI
IC
CA
AL
LS
S
GC9901 – GC9944
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 3
Schottky Barrier Diodes
For Mixers and Detectors
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
p
liant
VF CURVES TYPICAL NF CURVES
Typical I-V Curves
12 3
4
0.01
0.1
1
10
100
0 0.2 0.4 0.6 0.8 1 1.2
V
F
(V)
I
F
(mA)
1-GC9902
2-GC9922
3-GC9932
4-GC9942
TYPICAL IF IMPEDANCE CURVES
G
GR
RA
AP
PH
HS
S
GC9901 – GC9944
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
Schottky Barrier Diodes
For Mixers and Detectors
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
p
liant
PACKAGE STYLE UC PACKAGE STYLE S12
Order as GC9900-UC
Order as GC9900-S12
PACKAGE STYLE TSR PACKAGE STYLE TCC
ORDER AS GC9900-TSR
ORDER AS GC9900-TCC
Also available as TCA (‘T’ Common Anode)
PACKAGE STYLE QR1 PACKAGE STYLE QB1
ORDER AS GC9900-QR1
ORDER AS GC9900-QB1
DISCRETE AND MONOLITHIC PACKAGE OPTIONS
M
ME
EC
CH
HA
AN
NI
IC
CA
AL
L
GC9901 – GC9944
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 5
Schottky Barrier Diodes
For Mixers and Detectors
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
p
liant
PACKAGE STYLE 127A PACKAGE STYLE 128A
PACKAGE STYLE 127B PACKAGE STYLE 128B
PACKAGE STYLE 127C PACKAGE STYLE 128C
NON HERMETIC EPOXY COATED PACKAGES
M
ME
EC
CH
HA
AN
NI
IC
CA
AL
L
GC9901 – GC9944
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 6
Schottky Barrier Diodes
For Mixers and Detectors
TM ®
www.MICROSEMI.com
Copyright 2006
Rev: 2009-01-19
RoHS Com
p
liant
PACKAGE STYLE 129A STYLE 174B
.
PACKAGE STYLE 129B STYLE 174C
PACKAGE STYLE 129C ORDERING INFORMATION
Package style and configuration should be included
when ordering 3 and 4 terminal products.
Format: partnum – pkg – config
For example:
- Order a ring quad in a 128C package as:
GC9901-128C-QR1
- Order a bridge quad in a 128C package as:
- GC9901-128C-QB1
Consult Factory for assistance.
OTHER PACKAGE STYLES AVAILABLE ON REQUEST
M
ME
EC
CH
HA
AN
NI
IC
CA
AL
L
