Order this document by MRF1004MA/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for Class B and C common base amplifier applications in short and long pulse TACAN, IFF, DME, and radar transmitters. * Guaranteed Performance @ 1090 MHz, 35 Vdc Output Power = 4.0 Watts Peak Minimum Gain = 10 dB 4.0 W, 960 - 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON * 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR * Industry Standard Package * Nitride Passivated * Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration * Internal Input Matching for Broadband Operation * Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 20 Vdc Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.5 Vdc Collector Current -- Continuous IC 250 mAdc Total Device Dissipation @ TC = 25C (1) Derate above 25C PD 7.0 40 Watts mW/C Storage Temperature Range Tstg - 65 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RJC 25 C/W CASE 332-04, STYLE 1 THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 -- -- Vdc Collector-Base Breakdown Voltage (IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 -- -- Vdc Emitter-Base Breakdown Voltage (IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 -- -- Vdc ICBO -- -- 0.5 mAdc hFE 10 -- 100 -- Characteristic OFF CHARACTERISTICS Collector Cutoff Current (VCB = 35 Vdc, IE = 0) ON CHARACTERISTICS DC Current Gain (IC = 75 mAdc, VCE = 5.0 Vdc) NOTES: (continued) 1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers. 2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 7 RF DEVICE DATA MOTOROLA Motorola, Inc. 1995 MRF1004MA 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Cob -- 3.3 5.0 pF Common-Base Amplifier Power Gain (VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) GPB 10 11 -- dB Collector Efficiency (VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz) 40 45 -- dB Load Mismatch (VCC = 35 Vdc, Pout = 4.0 W pk, f = 1090 MHz, VSWR = 10:1 All Phase Angles) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 35 Vdc, IE = 0, f = 1.0 MHz) FUNCTIONAL TESTS (Pulse Width = 10 s, Duty Cycle = 1.0%) No Degradation in Power Output C1 C2 C3 + + VCC = 35 Vdc - - L2 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 C4 RF OUTPUT D.U.T. L1 C1 -- 0.1 F C2, C4 -- 220 pF Chip Capacitor C3 -- 20 F, 50 V Electrolytic L1, L2 -- 3 Turns #18 AWG, 1/8 ID Z1-Z6 Distributed Microstrip Elements, See Photomaster Board Material -- 0.031 Thick Glass Teflon Figure 1. 1090 MHz Test Circuit MRF1004MA 2 MOTOROLA RF DEVICE DATA 8 6.5 Pout , OUTPUT POWER (W pk) Pout , OUTPUT POWER (W pk) f = 0.96 GHz 5.5 1.09 GHz 4.5 1.215 GHz 3.5 VCC = 35 V tP = 10 s D = 1% 2.5 150 250 350 450 Pin, INPUT POWER (mW pk) 550 7 400 mW pk 5 4 650 960 1090 f, FREQUENCY (MHz) 1215 Figure 3. Output Power versus Frequency 5 16 G PB , POWER GAIN (dB) Pout , OUTPUT POWER (W pk) Pin = 650 mW pk 6 Figure 2. Output Power versus Input Power 4 Pin = 400 mW pk tP = 10 s D = 1% f = 1090 MHz 3 VCC = 35 V tP = 10 s D = 1% VCC = 35 V tP = 10 s D = 1% 14 12 Pout = 4 W pk 10 8 20 25 30 VCC, SUPPLY VOLTAGE (V) 35 960 Figure 4. Output Power versus Supply Voltage 1090 f, FREQUENCY (MHz) 1215 Figure 5. Power Gain versus Frequency + j50 + j25 + j100 Zin + j10 1090 + j150 1215 f = 960 MHz + j250 + j500 0 10 25 50 100 150 250 500 ZOL* (Pin = 650 mW pk) - j10 1215 1215 - j25 - j500 - j250 1090 f = 960 MHz f = 960 MHz Zin Ohms 960 1090 1215 5.0 + j17.5 10 + j23 16 + j29.5 ZOL* (Pin = 400 mW pk) ZOL* (Pout = 4.0 W pk) Ohms Ohms 23.5 - j26 18.5 - j25 15.5 - j23.5 22.5 - j36 15 - j32.5 11 - j23 ZOL* = Conjugate of the optimum load impedance into which the device ZOL* = output operates at a given output power, voltage, and frequency. - j150 1090 ZOL* (Pout = 4 W pk) f MHz - j100 COORDINATES IN OHMS - j50 Figure 6. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF1004MA 3 Pout = 4 W pk VCC = 35 V tP = 1 ms D = 10% f = 1090 MHz Figure 7. Typical Long Pulse Performance MRF1004MA 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS L NOTES: 1. DIMENSION K APPLIES TWO PLACES. 2. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1973. M 4 K 1 D 3 DIM A B C D E F H J K L M N U 2 A N J H F -T- C U SEATING PLANE 8-32 UNC 2A STYLE 1: PIN 1. 2. 3. 4. E -B- 0.76 (0.030) M T B MILLIMETERS MIN MAX 6.86 7.62 6.10 6.60 16.26 16.76 4.95 5.21 1.40 1.65 2.67 4.32 1.40 1.65 0.08 0.18 15.24 --- 2.41 2.67 45 _NOM 4.97 6.22 2.92 3.68 INCHES MIN MAX 0.270 0.300 0.240 0.260 0.640 0.660 0.195 0.205 0.055 0.065 0.105 0.170 0.055 0.065 0.003 0.007 0.600 --- 0.095 0.105 45 _NOM 0.180 0.245 0.115 0.145 BASE EMITTER BASE COLLECTOR M CASE 332-04 ISSUE D MRF1004MA MOTOROLA RF DEVICE DATA MRF1004MA 5 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 MRF1004MA 6 *MRF1004MA/D* MRF1004MA/D MOTOROLA RF DEVICE DATA