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MRF1004MAMOTOROLA RF DEVICE DATA
The RF Line
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
•Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
•100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
•Industry Standard Package
•Nitride Passivated
•Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
•Internal Input Matching for Broadband Operation
•Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 20 Vdc
Collector–Base Voltage VCBO 50 Vdc
Emitter–Base Voltage VEBO 3.5 Vdc
Collector Current — Continuous IC250 mAdc
Total Device Dissipation @ TC = 25°C (1)
Derate above 25°CPD7.0
40 Watts
mW/°C
Storage Temperature Range Tstg –65 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Case (2) RθJC 25 °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0) V(BR)CEO 20 — — Vdc
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0) V(BR)CES 50 — — Vdc
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0) V(BR)CBO 50 — — Vdc
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0) V(BR)EBO 3.5 — — Vdc
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0) ICBO — — 0.5 mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 75 mAdc, VCE = 5.0 Vdc) hFE 10 — 100 —
NOTES: (continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.