IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
1
Rev. 2.5 30.04.2015
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for :
- Variable Speed Drive for washing machines and air conditioners
- induction cooking
- Uninterrupted Power Supply
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
IGP10N60T
600V
10A
1.5V
175C
G10T60
PG-TO-220-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage, Tj ≥ 25C
VCE
600
V
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
IC
24
18
A
Pulsed collector current, tp limited by Tjmax
ICpuls
30
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
30
Gate-emitter voltage
VGE
20
V
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C
tSC
5
s
Power dissipation TC = 25C
Ptot
110
W
Operating junction temperature
Tj
-40...+175
C
Storage temperature
Tstg
-55...+150
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
260
1
J-STD-020 and JESD-022
2
) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO-220-3
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
2
Rev. 2.5 30.04.2015
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
junction – case
RthJC
1.35
K/W
Thermal resistance,
junction – ambient
RthJA
62
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
Static Characteristic
Collector-emitter breakdown voltage
V(BR)CES
VGE=0V, IC=0.2mA
600
-
-
V
Collector-emitter saturation voltage
VCE(sat)
VGE = 15V, IC=10A
Tj=25C
Tj=175C
-
-
1.5
1.8
2.05
-
Gate-emitter threshold voltage
VGE(th)
IC=0.3mA,VCE=VGE
4.1
4.6
5.7
Zero gate voltage collector current
ICES
VCE=600V,
VGE=0V
Tj=25C
Tj=175C
-
-
-
-
40
1000
µA
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V, IC=10A
-
6
-
S
Integrated gate resistor
RGint
none
Ω
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
VGE=0V,
f=1MHz
-
551
-
pF
Output capacitance
Coss
-
40
-
Reverse transfer capacitance
Crss
-
17
-
Gate charge
QGate
VCC=480V, IC=10A
VGE=15V
-
62
-
nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE
TO-220-3-1
-
7
-
nH
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
VCC = 400V,
Tj = 25C
-
100
-
A
1
) Allowed number of short circuits: <1000; time between short circuits: >1s.
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
3
Rev. 2.5 30.04.2015
Switching Characteristic 3), Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
td(on)
Tj=25C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L
=60nH,C
=40pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKP10N60T
-
12
-
ns
Rise time
tr
-
8
-
Turn-off delay time
td(off)
-
215
-
Fall time
tf
-
38
-
Turn-on energy
Eon
-
0.16
-
mJ
Turn-off energy
Eoff
-
0.27
-
Total switching energy
Ets
-
0.43
-
Switching Characteristic 3), Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
IGBT Characteristic
Turn-on delay time
td(on)
Tj=175C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L
=60nH,C
=40pF
L
, C
from Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKP10N60T
-
10
-
ns
Rise time
tr
-
11
-
Turn-off delay time
td(off)
-
233
-
Fall time
tf
-
63
-
Turn-on energy
Eon
-
0.26
-
mJ
Turn-off energy
Eoff
-
0.35
-
Total switching energy
Ets
-
0.61
-
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
4
Rev. 2.5 30.04.2015
IC, COLLECTOR CURRENT
10Hz 100Hz 1kHz 10kHz 100kHz
0A
5A
10A
15A
20A
25A
30A
TC=110°C
TC=80°C
IC, COLLECTOR CURRENT
1V 10V 100V 1000V
0,1A
1A
10A
20µs
100µs
500µs
DC
tp=1µs
5µs
10ms
f, SWITCHING FREQUENCY
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
Ptot, POWER DISSIPATION
25°C 50°C 75°C 100°C 125°C 150°C
0W
20W
40W
60W
80W
100W
120W
IC, COLLECTOR CURRENT
25°C 50°C 75°C 100°C 125°C 150°C
0A
5A
10A
15A
20A
TC, CASE TEMPERATURE
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 175C)
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 175C)
Ic
Ic
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
5
Rev. 2.5 30.04.2015
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V
0A
5A
10A
15A
20A
25A
30A
15V
6V
8V
10V
12V
VGE=20V
IC, COLLECTOR CURRENT
0V 1V 2V 3V 4V 5V
0A
5A
10A
15A
20A
25A
30A
15V
6V
8V
10V
12V
VGE=20V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
Figure 6. Typical output characteristic
(Tj = 175°C)
IC, COLLECTOR CURRENT
0V 2V 4V 6V 8V 10V
0A
5A
10A
15A
20A
25A
25°C
TJ=175°C
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=10A
IC=20A
IC=5A
VGE, GATE-EMITTER VOLTAGE
TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic
(VCE=20V)
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
6
Rev. 2.5 30.04.2015
t, SWITCHING TIMES
0A 5A 10A 15A 20A
1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, SWITCHING TIMES
1ns
10ns
100ns
tr
td(on)
tf
td(off)
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
25°C 50°C 75°C 100°C 125°C 150°C
1ns
10ns
100ns
tr
td(on)
tf
td(off)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
-50°C 0°C 50°C 100°C 150°C
0V
1V
2V
3V
4V
5V
6V
7V
min.
typ. max.
TJ, JUNCTION TEMPERATURE
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, rG=23Ω,
Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.3mA)
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
7
Rev. 2.5 30.04.2015
E, SWITCHING ENERGY LOSSES
0A 5A 10A 15A
0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
1,0mJ Ets*
Eoff
*) Eon and Etsinclude losses
due to diode recovery
Eon*
E, SWITCHING ENERGY LOSSES
0,0 mJ
0,2 mJ
0,4 mJ
0,6 mJ
0,8 mJ Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
E, SWITCHING ENERGY LOSSES
50°C 100°C 150°C
0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
0,6mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
E, SWITCHING ENERGY LOSSES
300V 350V 400V 450V 500V 550V
0,0mJ
0,2mJ
0,4mJ
0,6mJ
0,8mJ
Ets*
Eon*
*) Eon and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, rG = 23Ω,
Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, rG = 23Ω,
Dynamic test circuit in Figure E)
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
8
Rev. 2.5 30.04.2015
VGE, GATE-EMITTER VOLTAGE
0nC 20nC 40nC 60nC
0V
5V
10V
15V
480V
120V
c, CAPACITANCE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=10 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
12V 14V 16V 18V
0A
25A
50A
75A
100A
125A
150A
tSC, SHORT CIRCUIT WITHSTAND TIME
10V 11V 12V 13V 14V
0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE
VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
9
Rev. 2.5 30.04.2015
ZthJC, TRANSIENT THERMAL IMPEDANCE
10µs 100µs 1ms 10ms 100ms
10-2K/W
10-1K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
R,( K/W )
, (s)
0.2911
6.53*10-2
0.4092
8.33*10-3
0.5008
7.37*10-4
0.1529
7.63*10-5
C1=
1/R1
R1
R2
C2=
2/R2
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
10
Rev. 2.5 30.04.2015
PG-TO220-3
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
11
Rev. 2.5 30.04.2015
Ir r m
90% Ir r m
10% Ir r m
di /dt
F
tr r
IF
i,v
t
QSQF
tStF
VR
di /dt
r r
Q =Q Q
r r S F
+
t =t t
r r S F
+
Figure C. Definition of diodes
switching characteristics
p(t) 1 2 n
T (t)
j
1
1
2
2n
n
T
C
r r
r
r
rr
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
IGP10N60T
TRENCHSTOP™ Series q
IFAG IPC TD VLS
12
Rev. 2.5 30.04.2015
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
