74HC14D.652 - NXP SEMICONDUCTORS - Datasheet.Directory

August, 2016 − Rev. 20 1Publication Order Number:

MMBZ5V6ALT1/D

MMBZxxxALT1G Series,

SZMMBZxxxALT1G Series

Zener Diodes, 24 and

40 Watt Peak Power

SOT−23 Dual Common Anode Zeners

These dual monolithic silicon Zener diodes are designed for

applications requiring transient overvoltage protection capability. They

are intended for use in voltage and ESD sensitive equipment such as

computers, printers, business machines, communication systems,

medical equipment and other applications. Their d ual junction common

anode design protects t wo s eparate l ines u sing only o ne p ackage. These

devices are ideal for situations where board space is at a premium.

Features

•SOT−23 Package Allows Either Two Separate Unidirectional

Configurations or a Single Bidirectional Configuration

•Standard Zener Breakdown Voltage Range − 5.6 V to 47 V

•Peak Power − 24 or 40 W @ 1.0 ms (Unidirectional),

per Figure 6 Waveform

•ESD Rating:

− Class 3B (> 16 kV) per the Human Body Model

− Class C (> 400 V) per the Machine Model

•ESD Rating of IEC61000−4−2 Level 4, ±30 kV Contact Discharge

•Maximum Clamping Voltage @ Peak Pulse Current

•Low Leakage < 5.0 mA

•Flammability Rating UL 94 V−0

•SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic case

FINISH: Corrosion resistant finish, easily solderable

MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:

260°C for 10 Seconds

Package designed for optimal automated board assembly

Small package size for high density applications

Available in 8 mm Tape and Reel

Use the Device Number to order the 7 inch/3,000 unit reel.

Replace the “T1” with “T3” in the Device Number to order the

13 inch/10,000 unit reel.

SOT−23

CASE 318

STYLE 12

CATHODE 1 3 ANODE

CATHODE 2

MARKING DIAGRAM

See specific marking information in the device marking

column of the table on page 3 of this data sheet.

DEVICE MARKING INFORMATION

See detailed ordering and shipping information on page 2 o

this data sheet.

ORDERING INFORMATION

XXXMG

XXX = Specific Device Code

M = Date Code

G= Pb−Free Package

(Note: Microdot may be in either location)

www.onsemi.com

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

www.onsemi.com

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Power Dissipation @ 1.0 ms (Note 1) MMBZ5V6ALT1G thru MMBZ9V1ALT1G

@ TL ≤ 25°C MMBZ12VALT1G thru MMBZ47VALT1G Ppk 24

40 W

Total Power Dissipation on FR−5 Board (Note 2)

@ TA = 25°C

Derate above 25°C

°PD°225

1.8 mW°

mW/°C

Thermal Resistance Junction−to−Ambient RqJA 556 °C/W

Total Power Dissipation on Alumina Substrate (Note 3)

@ TA = 25°C

Derate above 25°C

°PD°300

2.4 °mW

mW/°C

Thermal Resistance Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature Range TJ, Tstg − 55 to +150 °C

Lead Solder Temperature − Maximum (10 Second Duration) TL260 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

should not be assumed, damage may occur and reliability may be af fected.

1. Non−repetitive current pulse per Figure 6 and derate above TA = 25°C per Figure 7.

2. FR−5 = 1.0 x 0.75 x 0.62 in.

3. Alumina = 0.4 x 0.3 x 0.024 in, 99.5% alumina.

*Other voltages may be available upon request.

ORDERING INFORMATION

Device Package Shipping†

MMBZ5V6ALT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

SZMMBZ5V6ALT1G* SOT−23

(Pb−Free) 3,000 / Tape & Reel

MMBZ5V6ALT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

MMBZ6VxALT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

SZMMBZ6VxALT1G* SOT−23

(Pb−Free) 3,000 / Tape & Reel

MMBZ6VxALT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

MMBZ9V1ALT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

MMBZ9V1ALT13G SOT−23

(Pb−Free) 10,000 / Tape & Reel

MMBZxxVALT1G SOT−23

(Pb−Free) 3,000 / Tape & Reel

SZMMBZxxVALT1G* SOT−23

(Pb−Free) 3,000 / Tape & Reel

MMBZxxVALT3G SOT−23

(Pb−Free) 10,000 / Tape & Reel

SZMMBZxxVALT3G* SOT−23

(Pb−Free) 10,000 / Tape & Reel

SZMMBZxxVTALT1G* SOT−23

(Pb−Free) 3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

www.onsemi.com

ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or 2 and 3)

Symbol Parameter

IPP Maximum Reverse Peak Pulse Current

VCClamping Voltage @ IPP

VRWM Working Peak Reverse Voltage

IRMaximum Reverse Leakage Current @ VRWM

VBR Breakdown Voltage @ IT

ITTest Current

QVBR Maximum Temperature Coefficient of VBR

IFForward Current

VFForward Voltage @ IF

ZZT Maximum Zener Impedance @ IZT

IZK Reverse Current

ZZK Maximum Zener Impedance @ IZK Uni−Directional Zener

IPP

VRWM

VCVBR VF

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

UNIDIRECTIONAL (Circuit tied to Pins 1 and 3 or Pins 2 and 3)

(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 24 WATTS

Device* Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage Max Zener

Impedance (Note 5) VC @ IPP

(Note 6)

QVBR

VBR (Note 4) (V) @ IT

ZZT

@ IZT ZZK @ IZK VCIPP

Volts mAMin Nom Max mA W W mA V A mV/5C

MMBZ5V6ALT1G/T3G 5A6 3.0 5.0 5.32 5.6 5.88 20 11 1600 0.25 8.0 3.0 1.26

MMBZ6V2ALT1G 6A2 3.0 0.5 5.89 6.2 6.51 1.0 − − − 8.7 2.76 2.80

MMBZ6V8ALT1G 6A8 4.5 0.5 6.46 6.8 7.14 1.0 − − − 9.6 2.5 3.4

MMBZ9V1ALT1G 9A1 6.0 0.3 8.65 9.1 9.56 1.0 − − − 14 1.7 7.5

(VF = 0.9 V Max @ IF = 10 mA) (5% Tolerance) 40 WATTS

Device* Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage VC @ IPP (Note 6)

QVBR

VBR (Note 4) (V) @ ITVCIPP

Volts nA Min Nom Max mA V A mV/5C

MMBZ12VALT1G 12A 8.5 200 11.40 12 12.60 1.0 17 2.35 7.5

MMBZ15VALT1G 15A 12 50 14.25 15 15.75 1.0 21 1.9 12.3

MMBZ16VALT1G 16A 13 50 15.20 16 16.80 1.0 23 1.7 13.8

MMBZ18VALT1G 18A 14.5 50 17.10 18 18.90 1.0 25 1.6 15.3

MMBZ20VALT1G 20A 17 50 19.00 20 21.00 1.0 28 1.4 17.2

MMBZ27VALT1G/T3G 27A 22 50 25.65 27 28.35 1.0 40 1.0 24.3

MMBZ33VALT1G 33A 26 50 31.35 33 34.65 1.0 46 0.87 30.4

MMBZ47VALT1G 47A 38 50 44.65 47 49.35 1.0 54 0.74 43.1

(VF = 0.9 V Max @ IF = 10 mA) (2% Tolerance) 40 WATTS

Device* Device

Marking

VRWM

IR @

VRWM

Breakdown Voltage VC @ IPP (Note 6)

QVBR

VBR (Note 4) (V) @ ITVCIPP

Volts nA Min Nom Max mA V A mV/5C

MMBZ16VTALT1G 16T 13 50 15.68 16 16.32 1.0 23 1.7 13.8

MMBZ47VTALT1G 47T 38 50 46.06 47 47.94 1.0 54 0.74 43.1

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. VBR measured at pulse test current IT at an ambient temperature of 25°C.

5. ZZT and ZZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for IZ(AC)

= 0.1 IZ(DC), with the AC frequency = 1.0 kHz.

6. Surge current waveform per Figure 6 and derate per Figure 7

*Include SZ-prefix devices where applicable.

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

−40 +50

Figure 1. Typical Breakdown Voltage

versus Temperature

(Upper curve for each voltage is bidirectional mode,

lower curve is unidirectional mode)

0TEMPERATURE (°C) +100 +150

0−40 +25

1000

Figure 2. Typical Leakage Current

versus Temperature

TEMPERATURE (°C)

+85 +12

100

0.1

0.01

BREAKDOWN VOLTAGE (VOLTS)

(VBR @ IT)

IR (nA)

Figure 3. Typical Capacitance versus Bias Voltage

(Upper curve for each voltage is unidirectional mode,

lower curve is bidirectional mode)

0 25 50 75 100 125 150 175

300

250

200

150

100

Figure 4. Typical Capacitance versus Bias Voltage

(Upper curve for each voltage is unidirectional mode,

lower curve is bidirectional mode)

TEMPERATURE (°C)

FR−5 BOARD

ALUMINA SUBSTRATE

01 23

320

280

240

160

120

C, CAPACITANCE (pF)

BIAS (V)

200

80 15 V

5.6 V

PD, POWER DISSIPATION (mW)

Figure 5. Steady State Power Derating Curve

01 23

C, CAPACITANCE (pF)

BIAS (V)

33 V

27 V

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

www.onsemi.com

TYPICAL CHARACTERISTICS

0.1 1 10 100 1000

100

Power is defined as VRSM x IZ(pk) where VRSM is

the clamping voltage at IZ(pk).

PW, PULSE WIDTH (ms)

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25°C

BIDIRECTIONAL

Figure 6. Pulse Waveform

VALUE (%)

100

001 234

t, TIME (ms)

Figure 7. Pulse Derating Curve

PULSE WIDTH (tP) IS DEFINED

AS THAT POINT WHERE THE

PEAK CURRENT DECAYS TO

50% OF IPP.

HALF VALUE − IPP

tr ≤ 10 ms

PEAK VALUE − IPP

100

00 25 50 75 100 125 150 175 20

TA, AMBIENT TEMPERATURE (°C)

Figure 8. Maximum Non−repetitive Surge

Power, Ppk versus PW Figure 9. Maximum Non−repetitive Surge

Power, Ppk(NOM) versus PW

0.1 1 10 100 100

100

PW, PULSE WIDTH (ms)

UNIDIRECTIONAL

RECTANGULAR

WAVEFORM, TA = 25°C

BIDIRECTIONAL

Power is defined as VZ(NOM) x IZ(pk) where

VZ(NOM) is the nominal Zener voltage measured at

the low test current used for voltage classification.

PEAK PULSE DERATING IN % OF PEAK

POWER OR CURRENT @ TA = 25°C

, PEAK SURGE POWER (W)

Ppk, PEAK SURGE POWER (W)

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

www.onsemi.com

TYPICAL COMMON ANODE APPLICATIONS

A dual junction common anode design in a SOT−23

package protects two separate lines using only one package.

This adds flexibility and creativity to PCB design especially

when board space is at a premium. Two simplified examples

of ESD applications are illustrated below.

MMBZ5V6ALT1G

THRU

MMBZ47VALT1G

KEYBOARD

TERMINAL

PRINTER

ETC.

FUNCTIONAL

DECODER

I/O

MMBZ5V6ALT1G

THRU

MMBZ47VALT1G

GND

Computer Interface Protection

Microprocessor Protection

I/O

RAM ROM

CLOCK

CPU

CONTROL BUS

ADDRESS BUS

DATA BUS

GND

VGG

VDD

MMBZ5V6ALT1

THRU

MMBZ47VALT1

MMBZxxxALT1G Series, SZMMBZxxxALT1G Series

www.onsemi.com

PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

HE0.35 0.54 0.69 0.014 0.021 0.027

c0 −−− 10 0 −−− 10

T°°°°

TOP VIEW

SIDE VIEW END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 12:

PIN 1. CATHODE

2. CATHODE

3. ANODE

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