©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
SS9012
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Electrical Characteristics Ta=25°C unless otherwise noted
hFE Classification
Symbol Parameter Ratings Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter V olt age -20 V
VEBO Emitter-Base Voltage -5 V
ICCollector Current -500 mA
PCCollector Power Dissipation 625 mW
TJJunction Temperature 150 °C
TSTG Storage Temperature -55 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
BVCBO Collector-Base Breakdown Voltage IC = -100µA, IE =0 -40 V
BVCEO Collector-Emitter Breakdown Voltage IC = -1mA, IB =0 -20 V
BVEBO Emitter-Base Breakdown Voltage IE = -100µA, IC =0 -5 V
ICBO Collector Cut-off Current VCB = -25V, IE =0 -100 nA
IEBO Emitter Cut-off Current VEB = -3V, IC =0 -100 nA
hFE1
hFE2
DC Current Gain VCE = -1V, IC = -50mA
VCE = -1V, IC = -500mA 64
40 120
90 202
VCE (sat) Collector-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.18 -0.6 V
VBE (sat) Base-Emitter Saturation Voltage IC = -500mA, IB = -50mA -0.95 -1.2 V
VBE (on) Base-Emitter On Voltage VCE = -1V, IC = -10mA -0.6 -0.67 -0.7 V
Classification D E F G H
hFE1 64 ~ 91 78 ~ 112 96 ~ 135 112 ~ 166 144 ~ 202
1. Emitter 2. Base 3. Collector
SS9012
1W Output Amplifier of Potable Radios in
Class B P ush-pull Operation .
• High total power dissipation. (PT=625mW)
• High Collector Current. (IC= -500mA)
• Complementary to SS9013
• Excellent hFE linearity. TO-92
1
©2002 Fairchild Semiconductor Corporation
SS9012
Rev. A4, November 2002
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Vo ltage
Collector-Emitter Saturation Voltage Figure 4. Current Gain Bandwidth Product
-0 -10 -20 -30 -40 -50
-0
-10
-20
-30
-40
-50 IB=-300µA
IB=-250µA
IB=-200µA
IB=-150µA
IB=-100µA
IB=-50µA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
-10 -100 -1000
10
100
1000 VCE = -1V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
-10 -100 -1000
-10
-100
-1000
VBE(sat)
VCE(sat)
IC=10IB
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
-1 -10 -100 -1000 -10000
1
10
100
1000 VCE=-6V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
0.46 ±0.10
1.27TYP
(R2.29)
3.86MAX
[1.27 ±0.20]1.27TYP
[1.27 ±0.20]
3.60 ±0.20
14.47 ±0.40
1.02 ±0.10
(0.25) 4.58 ±0.20
4.58 +0.25
–0.15
0.38 +0.10
–0.05
0.38 +0.10
–0.05
TO-92
Package Dimensions
SS9012
Dimensions in Millimeters
©2002 Fairchild Semiconductor Corporation Rev. A4, November 2002
©2002 Fairchild Semiconductor Corporation Rev. I1
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