1N1183A thru 1N1190AR Silicon Standard Recovery Diode VRRM = 50 V - 600 V IF = 40 A Features * High Surge Capability * Types up to 600 V VRRM DO-5 Package Maximum ratings, at Tj = 25 C, unless otherwise specified Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Symbol Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1188 (R) 1N1190 (R) Unit V VRRM 50 100 200 VRMS 35 70 140 280 420 V VDC 50 100 200 400 600 V 400 600 Continuous forward current IF TC 150 C 40 40 40 40 40 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 800 800 800 800 800 A Operating temperature Storage temperature Tj Tstg -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 -65 to 200 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Diode forward voltage VF Reverse current IR Conditions 1N1183 (R) 1N1184 (R) 1N1186 (R) 1N1188 (R) 1N1190 (R) Unit V IF = 40 A, Tj = 25 C VR = 50 V, Tj = 25 C VR = 50 V, Tj = 140 C 1.1 10 15 1.1 10 15 1.1 10 15 1.1 10 15 1.1 10 15 A mA 1.25 1.25 1.25 1.25 1.25 C/W Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 1N1183A thru 1N1190AR www.genesicsemi.com 2