V
RRM
= 50 V - 600 V
I
F
= 40 A
Features
• High Surge Capability DO-5 Package
• Types up to 600 V V
RRM
Parameter Symbol 1N1183 (R) 1N1184 (R
)
1N1188 (R) 1N1190 (R
)
Unit
Repetitive peak reverse
V
50
100
400
600
V
1N1183A thru 1N1190AR
200
1N1186 (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Standard
Recover
y
Diode
Conditions
voltage
V
RRM
50
100
400
600
V
RMS reverse voltage V
RMS
35 70 280 420 V
DC blocking voltage V
DC
50 100 400 600 V
Continuous forward current I
F
40 40 40 40 A
Operating temperature T
j
-65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
Storage temperature T
stg
-65 to 200 -65 to 200 -65 to 200 -65 to 200 °C
Parameter Symbol 1N1183 (R) 1N1184 (R
)
1N1188 (R) 1N1190 (R
)
Unit
Diode forward voltage 1.1 1.1 1.1 1.1
10 10 10 10 μA
15 15 15 15 mA
Thermal characteristics
Thermal resistance, junction -
case R
thJC
1.25 1.25 1.25 1.25 °C/W
200
A
Reverse current I
R
V
F
800 800 800
-65 to 200
T
C
= 25 °C, t
p
= 8.3 ms
V
R
= 50 V, T
j
= 25 °C
I
F
= 40 A, T
j
= 25 °C
T
C
≤ 150 °C
Conditions
200
140
800 800
-65 to 200
40
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
10
1N1186 (R)
1.25
V
R
= 50 V, T
j
= 140 °C
1.1 V
15
Surge non-repetitive forward
current, Half Sine Wave I
F,SM
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1N1183A thru 1N1190AR
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