IRF840 - Intersil Corporation - Datasheet.Directory

4-257

File Number

2312.3

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

IRF840

8A, 500V, 0.850 Ohm, N-Channel Power

MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld

effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a speciﬁed level of

energy in the breakdown avalanche mode of operation. All of

these power MOSFETs are designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA17425.

Features

• 8A, 500V

•r

DS(ON) = 0.850Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

Symbol

Packaging

JEDEC TO-220AB

TOP VIEW

Ordering Information

PART NUMBER PACKAGE BRAND

IRF840 TO-220AB IRF840

NOTE: When ordering, include the entire part number. G

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

Data Sheet July 1999

4-258

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Speciﬁed

IRF840 UNITS

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V

Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID8.0 A

TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID5.1 A

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 32 A

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD125 W

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC

Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 510 mJ

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T

STG -55 to 150 oC

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T

pkg 300

260

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe

device at these or any other conditions above those indicated in the operational sections of this speciﬁcation is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Speciﬁcations TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 500 - - V

Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V

Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA

VDS = 0.8 x Rated BVDSS,V

GS = 0V, TJ= 125oC - - 250 µA

On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 8.0 - - A

Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA

Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 4.4A (Figures 8, 9) - 0.8 0.85 Ω

Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 4.4A (Figure 12) 4.9 7.4 - S

Turn-On Delay Time tD(ON) VDD = 250V, ID≈ 8A, RG = 9.1Ω, RL = 30Ω

MOSFET Switching Times are Essentially

Independent of Operating Temperature.

-1521ns

Rise Time tr-2135ns

Turn-Off Delay Time tD(OFF) -5074ns

Fall Time tf-2030ns

Total Gate Charge

(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 8A, VDS = 0.8 x Rated BVDSS

Ig(REF) = 1.5mA (Figure 14) Gate Charge is

Essentially Independent of Operating

Temperature

-4263nC

Gate to Source Charge Qgs - 7.0 - nC

Gate to Drain “Miller” Charge Qgd -22-nC

Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1225 - pF

Output Capacitance COSS - 200 - pF

Reverse-Transfer Capacitance CRSS -85-pF

Internal Drain Inductance LDMeasured from the

Contact Screw on Tab

to Center of Die

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

- 3.5 - nH

Measuredfromthe Drain

Lead, 6mm (0.25in) from

P ac kage to Center of Die

- 4.5 - nH

Internal Source Inductance LSMeasured from the

Source Lead, 6mm

(0.25in) from Header to

Source Bonding Pad

- 7.5 - nH

Thermal Resistance Junction to Case RθJC - - 1.0 oC/W

Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 62.5 oC/W

IRF840

4-259

Source to Drain Diode Speciﬁcations

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Continuous Source to Drain Current ISD Modified MOSFET

Symbol Showing the

Integral Reverse P-N

Junction Diode

- - 8.0 A

Pulse Source to Drain Current (Note 3) ISDM - - 32 A

Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 8.0A, VGS = 100A/µs (Figure 13) - - 2.0 V

Reverse Recovery Time trr TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs 210 475 970 ns

Reverse Recovered Charge QRR TJ = 25oC, ISD = 8.0A, dISD/dt = 100A/µs 2.0 4.6 8.2 µC

NOTES:

2. Pulse Test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

3. Repetitive Rating: Pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).

4. VDD = 50V, starting TJ = 25oC, L = 14mH, RG = 25Ω, peak IAS = 8A.

Typical Performance Curves

Unless Otherwise Speciﬁed

FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE

TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs

CASE TEMPERATURE

FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE

0 50 100 150

TC, CASE TEMPERATURE (oC)

POWER DISSIPATION MULTIPLIER

0.2

0.4

0.6

0.8

1.0

1.2

TC, CASE TEMPERATURE (oC)

50 75 10025 150

ID, DRAIN CURRENT (A)

125

ZθJC, NORMALIZED TRANSIENT

10-2

10-5 10-4 10-3 0.1 1 10

t1, RECTANGULAR PULSE DURATION (s)

10-3

0.1

10-2

DUTY FACTOR: D = t1/t2

NOTES:

PEAK TJ= PDM x ZθJC x RθJC + TC

PDM

t1t2

SINGLE PULSE

0.02

0.01

0.1

0.2

0.5

0.05

THERMAL IMPEDANCE

IRF840

4-260

FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS

FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS

FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs

VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON

RESISTANCE vs JUNCTION TEMPERATURE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

110

102

0.1

ID, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V) 103

102

1ms

10ms

100µs

10µs

OPERATION IN THIS

REGION IS LIMITED

BY rDS(ON)

TJ = MAX RATED

SINGLE PULSE

TC = 25oC

VDS, DRAIN TO SOURCE VOLTAGE (V)

50 100 150 2000

ID, DRAIN CURRENT (A)

PULSE DURATION = 80µs

250

VGS = 5.0V

VGS = 6.0V

VGS = 10V

VGS = 4.0V

VGS = 4.5V

VGS = 5.5V

DUTY CYCLE = 0.5% MAX

VDS, DRAIN TO SOURCE VOLTAGE (V)

36912015

ID, DRAIN CURRENT (A)

VGS = 10V

VGS = 4.0V

VGS = 6.0V

VGS = 5.5V

VGS = 4.5V

VGS = 5.0V

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ISD(ON), DRAIN TO SOURCE

VSD, GATE TO SOURCE VOLTAGE (V)

100

0.1

0246810

TJ = 150oCTJ = 25oC

0.01

CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS ≥50V

TC, CASE TEMPERATURE (oC)

81624040

VGS = 20V

VGS = 10V

rDS(ON), DRAIN TO SOURCE

ON RESISTANCE (Ω)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

3.0

1.8

0.6

100

TJ, JUNCTION TEMPERATURE (oC)

NORMALIZED DRAIN TO SOURCE

2.4

1.2

0140

ON RESISTANCE VOLTAGE

-40 60 16012080400-60 -20

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

ID = 4.4A, VGS = 10V

IRF840

4-261

FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN

VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE

FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE

FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE

Typical Performance Curves

Unless Otherwise Speciﬁed (Continued)

1.25

1.05

0.85

100

TJ, JUNCTION TEMPERATURE (oC)

1.15

0.95

0.75 140

-40 60 16012080400-60 -20

ID = 250µA

NORMALIZED DRAIN TO SOURCE

BREAKDOWN VOLTAGE

C, CAPACITANCE (pF)

VDS, DRAIN TO SOURCE VOLTAGE (V)

3000

2400

1800

1200

600

025 102

CISS

VGS = 0V, f = 1MHz

CISS = CGS + CGD

CRSS = CGD

COSS ≈ CDS + CGD

COSS

CRSS

ID, DRAIN CURRENT (A)

36912015

gfs, TRANSCONDUCTANCE (S)

TJ = 25oC

TJ = 150oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

VDS ≥ 50V

ISD, SOURCE TO DRAIN CURRENT (A)

VSD, SOURCE TO DRAIN VOLTAGE (V)

0 0.3 0.6 0.9 1.5

1.0

TJ = 150oC

1.2

0.1

100

TJ = 25oC

PULSE DURATION = 80µs

DUTY CYCLE = 0.5% MAX

Qg, GATE CHARGE (nC)

12 24 36 48060

VGS, GATE TO SOURCE VOLTAGE (V)

ID = 8A

VDS = 250V

VDS = 100V

VDS = 400V

IRF840

4-262

Test Circuits and Waveforms

FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS

FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS

FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS

VGS

0.01Ω

IAS

VDS

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VDS

BVDSS

IAS

tAV

VGS

DUT

-VDD

tON

td(ON)

90%

10%

VDS 90%

10%

td(OFF)

tOFF

90%

50%

10% PULSE WIDTH

VGS

0.3µF

12V

BATTERY 50kΩ

VDS

DUT

Ig(REF)

(ISOLATED

VDS

0.2µF

CURRENT

REGULATOR

ID CURRENT

SAMPLING

IG CURRENT

SAMPLING

SUPPLY)

RESISTOR RESISTOR

SAME TYPE

AS DUT Qg(TOT)

Qgd

Qgs

VDS

VGS

VDD

Ig(REF)

IRF840

4-263

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IRF840