
4-258
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF840 UNITS
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 500 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR 500 V
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID8.0 A
TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID5.1 A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM 32 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .PD125 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS 510 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ,T
STG -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
pkg 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS VGS = 0V, ID = 250µA (Figure 10) 500 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero-Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS,V
GS = 0V, TJ= 125oC - - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V 8.0 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) VGS = 10V, ID = 4.4A (Figures 8, 9) - 0.8 0.85 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 4.4A (Figure 12) 4.9 7.4 - S
Turn-On Delay Time tD(ON) VDD = 250V, ID≈ 8A, RG = 9.1Ω, RL = 30Ω
MOSFET Switching Times are Essentially
Independent of Operating Temperature.
-1521ns
Rise Time tr-2135ns
Turn-Off Delay Time tD(OFF) -5074ns
Fall Time tf-2030ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 8A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA (Figure 14) Gate Charge is
Essentially Independent of Operating
Temperature
-4263nC
Gate to Source Charge Qgs - 7.0 - nC
Gate to Drain “Miller” Charge Qgd -22-nC
Input Capacitance CISS VGS = 0V, VDS = 25V, f = 1.0MHz (Figure 11) - 1225 - pF
Output Capacitance COSS - 200 - pF
Reverse-Transfer Capacitance CRSS -85-pF
Internal Drain Inductance LDMeasured from the
Contact Screw on Tab
to Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 3.5 - nH
Measuredfromthe Drain
Lead, 6mm (0.25in) from
P ac kage to Center of Die
- 4.5 - nH
Internal Source Inductance LSMeasured from the
Source Lead, 6mm
(0.25in) from Header to
Source Bonding Pad
- 7.5 - nH
Thermal Resistance Junction to Case RθJC - - 1.0 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 62.5 oC/W
LS
LD
G
D
S
IRF840