IDT02S60C
2ndGeneration thinQ!TM SiC Schottky Diode
Features
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
• High surge current capability
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
• Optimized for high temperature operation
thinQ! 2G Diode specially designed for fast switching applications like:
• CCM PFC
Maximum ratings
Parameter Symbol Conditions Unit
Continuous forward current IFTC<120 °C 2A
TC<70 °C 3
RMS forward current IF,RMS f=50 Hz 2.8
IF,SM TC=25 °C, tp=10 ms 11.5
TC=150°C, tp=10 ms 9.7
Repetitive peak forward current IF,RM
Tj=150 °C,
TC=100 °C, D=0.1 7.3
Non-repetitive peak forward current IF,max TC=25 °C, tp=10 µs 100
i²t value ∫i2dtTC=25 °C, tp=10 ms 0.61 A2s
TC=150°C, tp=10 ms 0.44
Repetitive peak reverse voltage VRRM Tj=25 °C 600 V
Diode dv/dt ruggedness dv/ dtVR = 0….480V 50 V/ns
Power dissipation Ptot TC=25 °C 18 W
Operating and storage temperature Tj, Tstg -55 ... 175 °C
Mounting torque M3 and M3.5 screws 60 Mcm
Value
Surge non-repetitive forward current,
sine halfwave
VDC 600 V
Qc3.2 nC
IF2 A
Product Summary
PG-TO220-2-2
Type Package Marking Pin 1 Pin 2
IDT02S60C PG-TO220-2-2 D02S60C C A
Rev. 2.0 page 1 2007-04-25
IDT02S60C
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case RthJC - - 8.5 K/W
Thermal resistance,
junction - ambient RthJA leaded - - 62
Soldering temperature,
wavesoldering only allowed at leads Tsold
1.6mm (0.063 in.) from
case for 10s - - 260 °C
Electrical characteristics
Static characteristics
DC blocking voltage VDC IR=0.05mA, Tj=25°C 600 - - V
Diode forward voltage VFIF=2 A, Tj=25 °C - 1.7 1.9
IF=2 A, Tj=150 °C - 2.1 2.6
IF=3 A, Tj=25 °C - 2.1 2.4
IF=3 A, Tj=150 °C - 2.8 3.7
Reverse current IRVR=600 V, Tj=25 °C - 0.23 15 µA
VR=600 V, Tj=150 °C - 1 150
AC characteristics
Total capacitive charge Qc- 3.2 - nC
Switching time3) tc- - <10 ns
CVR=1 V, f= MHz -60-pF
VR=300 V, f=1 MHz -8-
VR=600 V, f=1 MHz -8-
Values
VR=400 V,IF≤IF,max,
diF/dt=200 A/µs,
Tj=150 °C
1) J-STD20 and JESD22
4) Only capacitive charge occuring, guaranteed by design.
2) All devices tested under avalanche condition, for a time periode of 5ms, at 5mA.
3) tc is the time constant for the capacitive displacement current waveform (independent from Tj, ILOAD and
di/dt), different from trr, which is dependent on Tj, ILOAD, di/dt. No reverse recovery time constant trr due to
absence of minority carrier injection.
Rev. 2.0 page 2 2007-04-25
IDT02S60C
1 Power dissipation 2 Diode forward current
Ptot=f(TC)IF=f(TC); Tj≤175 °C
parameter: RthJC(max) parameter: D=tP/T
3 Typ. forward characteristic 4 Typ. forward characteristic in surge current
IF=f(VF); tp=400 µs mode
parameter: TjIF=f(VF); tp=400 µs; parameter: Tj
0
4
8
12
16
20
25 75 125 175
TC [°C]
Ptot [W]
1
0.7
0.5
0.3
0.1
0
2
4
6
8
10
12
14
25 75 125 175
TC [°C]
IF [A]
-55ºC
25ºC
100ºC
150ºC
175ºC
0
1
2
3
01234
VF[V]
IF [A] IF
-55ºC
25ºC
100ºC
150ºC
175ºC
0
3
6
9
12
15
02468
VF[V]
IF [A] IF
Rev. 2.0 page 3 2007-04-25
IDT02S60C
5 Typ. capacitance charge vs. current slope 6 Typ. reverse current vs. reverse voltage
QC=f(diF/dt)4); Tj=150 °C; I F≤IF,max IR=f(VR)
parameter: Tj
7 Transient thermal impedance 8 Typ. capacitance vs. reverse voltage
ZthJC=f(tp)C=f(VR); TC=25 °C, f=1 MHz
parameter: D=tp/T
103
102
101
100
0
15
30
45
60
VR [V]
C [pF]
0
0.02
0.05
0.1
0.2
0.5
10-1
10-2
10-3
10-4
10-5
101
100
10-1
10-2
tP [s]
ZthJC [K/W]
25 °C
100 °C
150 °C
175 °C
-55 °C
10-5
10-6
10-7
10-8
10-9
10-10
100 200 300 400 500 600
VR [V]
IR [µA]
0
1
2
3
4
100 400 700 1000
di F/dt [A/µs]
QC [nC]
Rev. 2.0 page 4 2007-04-25
IDT02S60C
9 Typ. C stored energy
EC=f(VR)
0.0
0.3
0.5
0.8
1.0
1.3
1.5
1.8
0 100 200 300 400 500 600
VR [V]
Ec [µC]
Rev. 2.0 page 5 2007-04-25
IDT02S60C
Package Outline:PG-TO220-2-2
Rev. 2.0 page 6 2007-04-25
IDT02S60C
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
A
ll Rights Reserved.
A
ttention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions o
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typica
values stated herein and/or any information regarding the application of the device, Infineon Technologie
s
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties o
non-infringement of intellectual property rights of any third party
Information
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(
www.infineon.com ).
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in question please contact your nearest Infineon Technologies Office
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written approval of Infineon Technologies, if a failure of such components can reasonably be expected t
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cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
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Rev. 2.0 page 7 2007-04-25