G E SOLID STATE 387508) 0019874 4 J d Optoelectronic Specifications THH1- BF Photon Coupled isolator MCT2, MCT2E, MCT26 GaAs Infrared Emitting Diode & NPN Siltcon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26are gallium arsenide, infrared emittingdiodes coupled witha silicon phototransistor in a dual- sears MILLIMETERS iNGHES in-line package. These devices are also available in Surface-Mount 47 ["* a| MPN ain, | mak | MIN. | MAX. NOTES packaging. =a | AT 636 F869 | 380 rao | *i Covered under U.L. component recognition program, | 7 | _ | ra Ree | 2 reference file 51868 ; eyrorwen} te arr te" | 00 | ' ' | Fo; wor! 17a; 040 | 070 absolute maximum ratings: (25C) < - fe is | om |e | INFRARED EMITTING DIODE tf se) P| | ae | Power Dissipation *200 milliwatts 'T i \ "| , NT asa |) as Forward Current (Continuous) 60 _ milliamps a ) R 282 i 343 | aig | 198 Forward Current (Peak) 3 ampere ponn4 o alco s_| aio | see | 70) 270 (Pulse width lusec 300 P Ps) { l TO NSTALLED POSITION LEAD CENTERS Reverse Voltage volts 2 OVERALL INSTALLED DIMENSION. *Derate 2.6mW/C above 25C ambient. so ate pune ARE MADE FROMTHE L--4 4, FOUR PLACES. PHOTO-TRANSISTOR TOTAL DEVICE Power Dissipation **200 milliwatts Storage Temperature -55 to 150C VcEO 30 volts Operating Temperature -55 to 100C Vepo 70 volts Lead Soldering Time (at 260C) 10 seconds Veco 7 volts Surge Isolation Voltage (Input to Output). Collector Current (Continuous) 100 milliamps 3500V 500V #*Derate 2.6mW/C above 25C ambient. wan 2500Vinats individual electrical characteristics (25C) INFRARED EMITTING DIODE TYP. | MAX, | UNITS PHOTO-TRANSISTOR MIN.| TYP.|MAX.| UNITS Forward Voltage 1.1 1.5 |volts Breakdown Voltage Vipr)cEeo 30) - | {volts (Ip = 10mA) (Ig = 10mA, Ip = 0) Breakdown Voltage ~ ViprycBo 70 | | jvolts (ig = 100HA, Ip = ) Reverse Current - 10 |microamps Breakdown Voltage VipryEco 71 - | [volts (Vp * 3V) (Ig = 100A, Iy = 0) Collector Dark Current Icko - 5 } 50 |nanoamps (Vcr = 10V, Ip = 9) Capacitance 50 |picofarads Capacitance | 2 | |picofarads (V =0,f= iMHz) (Veg = 10V, = 1MHz) coupled electrical characteristics (25C) min. | Tye. | MAX. | UNITS DC Current Transfer Ratio (Ip = 10mA, Vcg = 10V) MCT2 MCT2E 20 - % MCT26 6 - - % Saturation Voltage Collector to Emitter (ig = 16mA, Ic = 2,0mA) MCT2 MCT2E _ 0.1 0.4 | volts Saturation Voltage Collector to Emitter Jp = 60mA, Ic = 1.6mA) MCT26 - - 0.5 | volts Isolation Resistance (Input to Output Voltage = 500Vpc) 100 - |gigaohms Input to Output Capacitance (Input to Output Voltage = 0, f = 1MHz) - - 2 | picofarads Switching Speeds: Rise/Fall Time (Veg = 10V, Icg = 2mA, Ri = 1000) - 5 |microseconds' Rise/Fall Time (Vcg = 10V. Ic = 50KA, R, = 1000) - 3 ]|microseconds| VDE Approved to 0883/6.80 01106 Certificate #35025, except type MCT2E. 398SOLID STATE MCT2, MCT2E, MCT26 3475081 0019475 QO Optoelectronic Specifications TYPICAL CHARACTERISTICS NORMALIZED TO: Ycg= 10 VOLTS Ip =10mMA teR{ON) NORMALIZED OUTPUT CURRENT Ip - INPUT CURRENT - mA OUTPUT CURRENT VS INPUT CURRENT 3 tp~ FONWARD CURRENT mA Ve- VOLTS Vp-FORWAAD VOLTAGE ~ VOLTS INPUT CHARACTERISTICS 10 = = 100 ps Rl = 100 1, I =2 MA, lon = 6.7 pe, tot = 3.3 ue fore RL = 1KN Stk NORMALIZED SWITCHING TIME on i 10 100 tot mA 9205-42559 SWITCHING SPEED VS. COLLECTOR CURRENT (NOT SATURATED) T 4-83 Veg = 10 tp =10mA = 25C Igejon) ~ NORMALIZED OUTPUT CURRENT oof 50 Ta- AMBIENT TEMPERATURE - C OUTPUT CURRENT VS TEMPERATURE NORMALIZED TO: Voge =10 Ig =1OmA TA =25C logon) - NORMALIZED OUTPUT CURRENT . 100 Voe> COLLECTOR TO EMITTER VOLTAGE - VOLTS OUTPUT CHARACTERISTICS leso~ NORMALIZED CUTPUT CURRENT tp - INPUT CURRENT~- mA OUTPUT CURRENT (icgo) VS INPUT CURRENT 399