VS-SD600N/R Series
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Revision: 11-Jan-18 1Document Number: 93551
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Standard Recovery Diodes,
(Stud Version), 600 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
•Standard JEDEC
® types
• Compression bonded encapsulations
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
ELECTRICAL SPECIFICATIONS
PRIMARY CHARACTERISTICS
IF(AV) 600 A
Package B-8
Circuit configuration Single
B-8
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS SD600N/R UNITS
04 to 20 22 to 32
IF(AV)
600 600 A
TC92 54 °C
IF(RMS) 940 940
A
IFSM
50 Hz 13 000 10 500
60 Hz 13 600 11 000
I2t50 Hz 845 551 kA2s
60 Hz 772 503
VRRM Range 400 to 2000 2200 to 3200 V
TJ-40 to +180 -40 to +150 °C
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = TJ MAXIMUM
mA
VS-SD600N/R
04 400 500
35
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
22 2200 2300
28 2800 2900
32 3200 3300
VS-SD600N/R Series
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Revision: 11-Jan-18 2Document Number: 93551
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Note
• The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS SD600N/R UNITS
04 to 20 22 to 32
Maximum average forward current
at case temperature IF(AV) 180° conduction, half sine wave
600 A
92 54 °C
570 375 A
100 °C
Maximum RMS forward current IF(RMS) DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32) 940
A
Maximum peak, one-cycle forward,
non-repetitive surge current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
13 000 10 500
t = 8.3 ms 13 600 11 000
t = 10 ms 100 % VRRM
reapplied
10 900 8830
t = 8.3 ms 11 450 9250
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
845 551
kA2s
t = 8.3 ms 772 503
t = 10 ms 100 % VRRM
reapplied
598 390
t = 8.3 ms 546 356
Maximum I2t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 8450 5510 kA2s
Low level value of threshold voltage VF(TO)1 (16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum 0.78 0.84 V
High level value of threshold voltage VF(TO)2 (I > x IF(AV)), TJ = TJ maximum 0.87 0.88
Low level value of forward
slope resistance rf1 (16.7 % x x IF(AV) < I < x IF(AV)),
TJ = TJ maximum 0.35 0.40
mW
High level value of forward
slope resistance rf2 (I > x IF(AV)), TJ = TJ maximum 0.31 0.38
Maximum forward voltage drop VFM Ipk = 1500 A, TJ = TJ maximum,
tp = 10 ms sinusoidal wave 1.31 1.44 V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
SD600N/R UNITS
04 to 20 22 to 32
Maximum junction operating
temperature range TJ-40 to 180 -40 to 150 °C
Maximum storage temperature range TStg -55 to 200
Maximum thermal resistance,
junction to case RthJC DC operation 0.1
K/W
Maximum thermal resistance,
case to heatsink RthCS Mounting surface, smooth, flat and greased 0.04
Maximum allowed
mounting torque ± 10 % Not-lubricated threads 50 Nm
Approximate weight 454 g
Case style See dimensions (link at the end of datasheet) B-8
RthJC CONDUCTION
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.012 0.008
TJ = TJ maximum K/W
120° 0.014 0.014
90° 0.017 0.019
60° 0.025 0.026
30° 0.042 0.042
VS-SD600N/R Series
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Revision: 11-Jan-18 3Document Number: 93551
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Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
80
90
100
110
120
130
140
150
160
170
180
0 100 200 300 400 500 600 700
30° 60° 90° 120° 180°
Average Forward Current (A)
Conduction Angle
Maximum Allowable Case Temperature (°C)
R (DC) = 0.1 K/ W
thJC
SD600N/ R Series (400V t o 2000V)
70
80
90
100
110
120
130
140
150
160
170
180
0 200 400 600 800 1000
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
R (DC) = 0.1 K/ W
thJC
SD600N/ R Series (400V t o 2000V)
50
60
70
80
90
100
110
120
130
140
150
0 100 200 300 400 500 600 700
30° 60°
90°
120°
180°
Average Forward Current (A)
Conduction Angle
Maximum Allowable Case Temperature (°C)
SD600N/ R Series (2500V t o 3200V)
R (DC) = 0.1 K/ W
thJC
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 6 0 0 N / R Se r i e s ( 2 5 0 0 V t o 3 2 0 0 V )
R (DC) = 0.1 K/ W
thJC
20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
1K
/W
R=0.02K
/W-DeltaR
thS
A
0.04K
/W
0.08K/W
0.1K/W
0.2K
/W
0.4K/W
0.6K
/W
1.8K/W
0
100
200
300
400
500
600
700
800
0100200300400500600
180°
120°
90°
60°
30° RM S Li m it
Conduction Angle
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD600N/ R Series
(400V to 2000V)
T = 180°C
J
VS-SD600N/R Series
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Revision: 11-Jan-18 4Document Number: 93551
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Fig. 6 - Forward Power Loss Characteristics
Fig. 7 - Forward Power Loss Characteristics
Fig. 8 - Forward Power Loss Characteristics
20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
1K
/W
R=0.0
2K
/W-DeltaR
thS
A
0.04K
/W
0.08K/W
0.1K
/W
0.2K
/W
0.4K/W
0.6K
/W
1.8K
/W
0
100
200
300
400
500
600
700
800
900
1000
1100
0 200 400 600 800 1000
DC
180°
120°
90°
60°
30°
RM S Li m it
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD600N/ R Se ries
(400V t o 2000V)
T = 180°C
J
25 50 75 100 125 150
Maximum Allowable Ambient Temperature (°C)
1K
/W
R=0.02K/W-DeltaR
thS
A
0.04K
/W
0.06 K/W
0.1K
/W
0.
2K/W
0.4K
/W
0
100
200
300
400
500
600
700
800
900
0 100 200 300 400 500 600
180°
120°
90°
60°
30°
RM S Lim it
Conduction Angle
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD600N/ R Se ries
(2500V to 3200V)
T = 150°C
J
25 50 75 100 125 150
Maximum Allowable Ambient Temperature (°C)
1K
/W
R=0.02K/W-DeltaR
thS
A
0.04K
/W
0.06K
/W
0.1K
/W
0.2K/W
0.4K/W
0
100
200
300
400
500
600
700
800
900
1000
1100
0 100 200 300 400 500 600 700 800 900
DC
180°
120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD600N/ R Series
(2500V t o 3200V)
T = 150°C
J
VS-SD600N/R Series
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Revision: 11-Jan-18 5Document Number: 93551
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Fig. 9 - Maximum Non-Repetitive Surge Current
Fig. 10 - Maximum Non-Repetitive Surge Current
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 12 - Maximum Non-Repetitive Surge Current
Fig. 13 - Forward Voltage Drop Characteristics
Fig. 14 - Forward Voltage Drop Characteristics
2000
4000
6000
8000
10000
12000
110100
Number Of Eq ual Amplitude Ha lf Cyc le Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
Initia l T = 180°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
SD600N/ R Series
(400V to 2000V)
2000
4000
6000
8000
10000
12000
14000
0.01 0.1 1
Pulse Train Duration (s)
Pe a k Ha lf Sin e Wa ve Fo rw a rd C u rre n t ( A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration.
Initia l T = 180 °C
No Voltage Reapplied
Rated V Reapplied
RRM
J
SD 6 0 0 N / R Se r i e s
(400V to 2000V)
2000
4000
6000
8000
10000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
SD 6 0 0 N / R Se r i e s
(2500V t o 3200V)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
2000
4000
6000
8000
10000
12000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initia l T = 150 °C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration.
SD 6 0 0 N / R Se r i e s
(2500V to 3200V)
Ma ximum Non Rep et it ive Surg e Curre nt
100
1000
10000
01234
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 1 8 0 ° C
J
SD 6 0 0 N / R Se r i e s
(400V t o 2000V)
100
1000
10000
012345
T = 2 5 ° C
J
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T = 150°C
J
SD 6 0 0 N / R Se r i e s
(2500V t o 3200V)
VS-SD600N/R Series
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Revision: 11-Jan-18 6Document Number: 93551
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Fig. 15 - Thermal Impedance ZthJC Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95303
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
St e a d y St a t e V a l u e :
R = 0.1 K/ W
(DC Operation)
thJC
SD 6 0 0 N / R Se r i e s
Device code
51 32 4 6 7 8
SDVS- 60 0 N 32 P C
2- Diode
1- Vishay Semiconductors product
3- Essential part number
4- 0 = standard recovery
5- N = stud normal polarity (cathode to stud)
R = stud reverse polarity (anode to stud)
6- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
7-P = stud base B-8 3/4" 16UNF-2A
8- C = ceramic cap
For metric device M24 x 1.5 contact factory
Document Number: 95303 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 11-Apr-08 1
B-8
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
26 (1.023) MAX.
10.5 (0.41) DIA.
5 (0.20) ± 0.3 (0.01)
12 (0.47) MIN.
27.5 (1.08)
MAX.
38 (1.5)
DIA. MAX.
Ceramic housing
SW 45
C.S. 70 mm2
21 (0.83) MAX.
3/4"-16UNF-2A *
115 (4.52) MIN.
245 (9.645)
255 (10.04)
80 (3.15)
MAX.
47 (1.85)
MAX.
*For metric device: M24 x 1.5 - length 21 (0.83) MAX.
contact factory
Legal Disclaimer Notice
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Revision: 08-Feb-17 1Document Number: 91000
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