RHRU7570, RHRU7580, RHRU7590, RHRU75100 Data Sheet April 1995 File Number 3925.1 75A, 700V - 1000V Hyperfast Diodes Features RHRU7570, RHRU7580, RHRU7590 and RHRU75100 (TA49068) are hyperfast diodes with soft recovery characteristics (tRR < 85ns). They have half the recovery time of ultrafast diodes and are silicon nitride passivated ionimplanted epitaxial planar construction. * Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns These devices are intended for use as freewheeling/clamping diodes and rectifiers in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. * Planar Construction * Operating Temperature . . . . . . . . . . . . . . . . . . . +175oC * Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V * Avalanche Energy Rated Applications * Switching Power Supplies * Power Switching Circuits * General Purpose Ordering Information Package PACKAGING AVAILABILITY PART NUMBER PACKAGE JEDEC STYLE TO-218 BRAND RHRU7570 TO-218 RHRU7570 RHRU7580 TO-218 RHRU7580 RHRU7590 TO-218 RHRU7590 RHRU75100 TO-218 RHRU75100 ANODE CATHODE (FLANGE) NOTE: When ordering, use the entire part number. Symbol K A Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified RHRU7570 RHRU7580 Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . VRRM 700 800 900 1000 V Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRWM 700 800 900 1000 V DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VR 700 800 900 1000 V Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IF(AV) (TC = +52oC) 75 75 75 75 A Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Square Wave, 20kHz) 150 150 150 150 A Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . IFSM (Halfwave, 1 Phase, 60Hz) 750 750 750 750 A Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 190 190 190 190 W 50 50 50 mj -65 to +175 -65 to +175 -65 to +175 oC Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . . . . EAVL 50 Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ -65 to +175 1 RHRU7590 RHRU75100 UNITS CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999 RHRU7570, RHRU7580, RHRU7590, RHRU75100 TC = +25oC, Unless Otherwise Specified Electrical Specifications RHRU7570 RHRU7580 RHRU7590 RHRU75100 SYMBOL TEST CONDITION MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX UNITS VF IF = 75A, TC = +25oC IF = 75A, TC = +150oC VR = 700V, TC = +25oC VR = 800V, TC = +25oC VR = 900V, TC = +25oC VR = 1000V, TC = +25oC VR = 700V, TC = +150oC VR = 800V, TC = +150oC VR = 900V, TC = +150oC VR = 1000V, TC = +150oC - - 3.0 - - 3.0 - - 3.0 - - 3.0 V IR IR - - 2.5 - - 2.5 - - 2.5 - - 2.5 V - - 500 - - - - - - - - - A - - - - - 500 - - - - - - A - - - - - - - - 500 - - - A - - - - - - - - - - - 500 A - - 2.0 - - - - - - - - - mA - - - - - 2.0 - - - - - - mA - - - - - - - - 2.0 - - - mA - - - - - - - - - - - 2.0 mA IF = 1A, dIF/dt = 100A/s - - 85 - - 85 - - 85 - - 85 ns IF = 75A, dIF/dt = 100A/s - - 100 - - 100 - - 100 - - 100 ns tA IF = 75A, dIF/dt = 100A/s - 55 - - 55 - - 55 - - 55 - ns tB IF = 75A, dIF/dt = 100A/s - 40 - - 40 - - 40 - - 40 - ns QRR IF = 75A, dIF/dt = 100A/s - 240 - - 240 - - 240 - - 240 - nC - 220 - - 220 - - 220 - - 220 - pF - - 0.8 - - 0.8 - - 0.8 - - 0.8 oC/W tRR CJ VR = 10V, IF = 0A RJC DEFINITIONS VF = Instantaneous forward voltage (pw = 300s, D = 2%). IR = Instantaneous reverse current. tRR = Reverse recovery time (Figure 2), summation of tA + tB. tA = Time to reach peak reverse current (See Figure 2). tB = Time from peak IRM to projected zero crossing of IRM based on a straight line from peak IRM through 25% of IRM (See Figure 2). QRR = Reverse recovery charge. CJ = Junction capacitance. RJC = Thermal resistance junction to case. EAVL = Controlled avalanche energy. (See Figures 10 and 11). pw = pulse width. D = duty cycle. +V3 V1 AMPLITUDE CONTROLS IF V2 AMPLITUDE CONTROLS dIF/dt R 1 L1 = SELF INDUCTANCE OF R4 + LLOOP Q1 +V1 t1 5tA(MAX) t2 > tRR t3 > 0 L1 tA(MIN) R4 10 Q2 0 LLOOP t2 R2 t1 IF dIF dt tRR tA DUT 0.25 IRM Q4 IRM t3 VR C1 0 tB 0 R4 Q3 -V2 -V4 R3 FIGURE 1. tRR TEST CIRCUIT 2 VRM FIGURE 2. tRR WAVEFORMS AND DEFINITIONS RHRU7570, RHRU7580, RHRU7590, RHRU75100 Typical Performance Curves 400 1000 IR , REVERSE CURRENT (A) IF, FORWARD CURRENT (A) +175oC 100 +100oC +25oC +175oC 10 1 0 1 3 2 VF, FORWARD VOLTAGE (V) 0.1 +25oC 0 200 TC = +25oC tRR 60 tA 40 tB 20 1000 TC = +100oC 300 200 tRR 150 tB 100 tA 50 0 1 0 75 10 1 IF, FORWARD CURRENT (A) FIGURE 5. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +25oC FIGURE 6. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +100oC IF(AV), AVERAGE FORWARD CURRENT (A) TC = +175oC 500 400 tRR 300 200 tB 100 tA 10 1 IF, FORWARD CURRENT (A) FIGURE 7. TYPICAL tRR, tA AND tB CURVES vs FORWARD CURRENT AT +175oC 3 75 10 IF, FORWARD CURRENT (A) t, RECOVERY TIMES (ns) 800 600 250 80 0 400 FIGURE 4. TYPICAL REVERSE CURRENT vs REVERSE VOLTAGE t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 1 VR , REVERSE VOLTAGE (V) FIGURE 3. TYPICAL FORWARD CURRENT vs FORWARD VOLTAGE DROP 100 +100oC 10 0.01 5 4 100 75 75 60 DC 45 SQ. WAVE 30 15 0 25 50 75 100 125 150 175 TC , CASE TEMPERATURE (oC) FIGURE 8. CURRENT DERATING CURVE FOR ALL TYPES RHRU7570, RHRU7580, RHRU7590, RHRU75100 Typical Performance Curves (Continued) CJ , JUNCTION CAPACITANCE (pF) 800 700 600 500 400 300 200 100 0 0 50 200 150 100 VR , REVERSE VOLTAGE (V) FIGURE 9. TYPICAL JUNCTION CAPACITANCE vs REVERSE VOLTAGE IMAX = 1A L = 40mH R < 0.1 EAVL = 1/2LI2 [VAVL/(VAVL - VDD)] Q1 AND Q2 ARE 1000V MOSFETs Q1 L 130 R + VDD 1M DUT 12V VAVL Q2 130 CURRENT SENSE IL IL I V VDD 12V t0 FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT t1 t2 t FIGURE 11. AVALANCHE CURRENT AND VOLTAGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. 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